BC807_BC807W_BC327_6 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 06 — 17 November 2009 4 of 19
NXP Semiconductors
BC807; BC807W; BC327
45 V, 500 mA PNP general-purpose transistors
5. Limiting values
[1] Transistor mounted on an FR4 printed-circuit board, single-sided copper, tin-plated and standard footprint.
[2] Valid for all available selection groups.
6. Thermal characteristics
[1] Transistor mounted on an FR4 printed-circuit board, single-sided copper, tin-plated and standard footprint.
[2] Valid for all available selection groups.
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
CBO
collector-base voltage open emitter - −50 V
V
CEO
collector-emitter voltage open base;
I
C
=10mA
- −45 V
V
EBO
emitter-base voltage open collector - −5V
I
C
collector current (DC) - −500 mA
I
CM
peak collector current - −1A
I
BM
peak base current - −200 mA
P
tot
total power dissipation
BC807 T
amb
≤ 25 °C
[1][2]
- 250 mW
BC807W T
amb
≤ 25 °C
[1][2]
- 200 mW
BC327 T
amb
≤ 25 °C
[1][2]
- 625 mW
T
stg
storage temperature −65 +150 °C
T
j
junction temperature - 150 °C
T
amb
ambient temperature −65 +150 °C
Table 7. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-a)
thermal resistance from
junction to ambient
BC807 T
amb
≤ 25 °C
[1][2]
--500K/W
BC807W T
amb
≤ 25 °C
[1][2]
--625K/W
BC327 T
amb
≤ 25 °C
[1][2]
--200K/W
