IXFK120N25

© 2002 IXYS All rights reserved
Symbol Test Conditions Maximum Ratings
V
DSS
T
J
= 25°C to 150°C 250 V
V
DGR
T
J
= 25°C to 150°C; R
GS
= 1 M 250 V
V
GS
Continuous ±20 V
V
GSM
Transient ±30 V
I
D25
T
C
= 25°C (MOSFET chip capability) 120 A
I
D104
T
C
= 104°C (External lead capability) 75 A
I
DM
T
C
= 25°C, pulse width limited by T
JM
480 A
I
AR
T
C
= 25°C90A
E
AR
T
C
= 25°C64mJ
E
AS
T
C
= 25°C3J
dv/dt I
S
I
DM
, di/dt 100 A/µs, V
DD
V
DSS
5 V/ns
T
J
150°C, R
G
= 2
P
D
T
C
= 25°C 560 W
T
J
-55 ... +150 °C
T
JM
150 °C
T
stg
-55 ... +150 °C
T
L
1.6 mm (0.063 in.) from case for 10 s 300 °C
M
d
Mounting torque TO-264 0.7/6 Nm/lb.in.
Weight PLUS 247 6 g
TO-264 10 g
Symbol Test Conditions Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
V
DSS
V
GS
= 0 V, I
D
= 1mA 250 V
V
GS(th)
V
DS
= V
GS
, I
D
= 8mA 2.0 4.0 V
I
GSS
V
GS
= ±20 V, V
DS
= 0 ±200 nA
I
DSS
V
DS
= V
DSS
T
J
= 25°C 50 µA
V
GS
= 0 V T
J
= 125°C3 mA
R
DS(on)
V
GS
= 10 V, I
D
= 0.5 I
D25
22 m
Note 1
Single MOSFET Die
Features
l
International standard packages
l
Low R
DS (on)
HDMOS
TM
process
l
Rugged polysilicon gate cell structure
l
Unclamped Inductive Switching (UIS)
rated
l
Low package inductance
- easy to drive and to protect
l
Fast intrinsic rectifier
Applications
l
DC-DC converters
l
Battery chargers
l
Switched-mode and resonant-mode
power supplies
l
DC choppers
l
AC motor control
l
Temperature and lighting controls
Advantages
l
PLUS 247
TM
package for clip or spring
mounting
l
Space savings
l
High power density
HiPerFET
TM
Power MOSFETs
98912 (2/02)
PLUS 247
TM
(IXFX)
G
D
(TAB)
G = Gate D = Drain
S = Source TAB = Drain
IXFX 120N25 V
DSS
= 250 V
IXFK 120N25 I
D25
= 120 A
R
DS(on)
= 22 m
t
rr
250 ns
S
G
D
(TAB)
TO-264 AA (IXFK)
Advance Technical Information
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
Symbol Test Conditions Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
g
fs
V
DS
= 10 V; I
D
= 0.5 I
D25
Note 1 62 85 S
C
iss
9400 pF
C
oss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz 1730 pF
C
rss
550 pF
t
d(on)
35 ns
t
r
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
38 ns
t
d(off)
R
G
= 1.5 (External), 175 ns
t
f
35 ns
Q
g(on)
400 nC
Q
gs
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
70 nC
Q
gd
155 nC
R
thJC
0.22 K/W
R
thCK
0.15 K/W
Source-Drain Diode Characteristic Values
(T
J
= 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
I
S
V
GS
= 0 V 120 A
I
SM
Repetitive; 480 A
pulse width limited by T
JM
V
SD
I
F
= I
S
, V
GS
= 0 V, Note 1 1.5 V
t
rr
250 ns
Q
RM
0.8 µC
I
RM
8A
I
F
= 30A,-di/dt = 100 A/µs, V
R
= 100 V
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.83 5.21 .190 .205
A
1
2.29 2.54 .090 .100
A
2
1.91 2.16 .075 .085
b 1.14 1.40 .045 .055
b
1
1.91 2.13 .075 .084
b
2
2.92 3.12 .115 .123
C 0.61 0.80 .024 .031
D 20.80 21.34 .819 .840
E 15.75 16.13 .620 .635
e 5.45 BSC .215 BSC
L 19.81 20.32 .780 .800
L1 3.81 4.32 .150 .170
Q 5.59 6.20 .220 0.244
R 4.32 4.83 .170 .190
Terminals: 1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
4 - Drain (Collector)
PLUS 247
TM
Outline
Note: 1. Pulse test, t 300 µs, duty cycle d 2 %
IXFK 120N25
IXFX 120N25
TO-264 AA Outline
Millimeter Inches
Min. Max. Min. Max.
A 4.82 5.13 .190 .202
A1 2.54 2.89 .100 .114
A2 2.00 2.10 .079 .083
b 1.12 1.42 .044 .056
b1 2.39 2.69 .094 .106
b2 2.90 3.09 .114 .122
c 0.53 0.83 .021 .033
D 25.91 26.16 1.020 1.030
E 19.81 19.96 .780 .786
e 5.46 BSC .215 BSC
J 0.00 0.25 .000 .010
K 0.00 0.25 .000 .010
L 20.32 20.83 .800 .820
L1 2.29 2.59 .090 .102
P 3.17 3.66 .125 .144
Q 6.07 6.27 .239 .247
Q1 8.38 8.69 .330 .342
R 3.81 4.32 .150 .170
R1 1.78 2.29 .070 .090
S 6.04 6.30 .238 .248
T 1.57 1.83 .062 .072
Dim.

IXFK120N25

Mfr. #:
Manufacturer:
Littelfuse
Description:
MOSFET 120 Amps 250V 0.022 Rds
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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