ZTX551STOB

PNP SILICON PLANAR
MEDIUM POWER TRANSISTORS
ISSUE 1  MARCH 94
FEATURES
* 60 Volt V
CEO
* 1 Amp continuous current
*P
tot
= 1 Watt
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL ZTX550 ZTX551 UNIT
Collector-Base Voltage V
CBO
-60 -80 V
Collector-Emitter Voltage V
CEO
-45 -60 V
Emitter-Base Voltage V
EBO
-5 V
Peak Pulse Current I
CM
-2 A
Continuous Collector Current I
C
-1 A
Power Dissipation: at T
amb
=25°C
derate above 25°C
P
tot
1
5.7
W
mW/ °C
Operating and Storage Temperature Range T
j
:T
stg
-55 to +200 °C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
PARAMETER SYMBOL ZTX550 ZTX551 UNIT CONDITIONS.
MIN. MAX. MIN. MAX.
Collector-Base
Breakdown Voltage
V
(BR)CBO
-60 -80 V
I
C
=-100µA
Collector-Emitter
Sustaining Voltage
V
CEO(sus)
-45 -60 V I
C
=-10mA*
Emitter-Base
Breakdown Voltage
V
(BR)EBO
-5 -5 V
I
E
=-100µA
Collector Cut-Off
Current
I
CBO
-0.1
-0.1
µA
µA
V
CB
=-45V
V
CB
=-60V
Emitter Cut-Off
Current
I
EBO
-0.1 -0.1
µA
V
EB
=-4V
Collector-Emitter
Saturation Voltage
V
CE(sat)
-0.25 -0.35 V I
C
=-150mA,
I
B
=-15mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
-1.1 -1.1 V I
C
=-150mA,
I
B
=-15mA*
Static Forward
Current Transfer
Ratio
h
FE
100
15
300 50
10
150 I
C
=-150mA,
V
CE
=-10V*
I
C
=-1A, V
CE
=-10V*
Transition
Frequency
f
T
150 150 MHz I
C
=-50mA, V
CE
=-10V
f=100MHz
E-Line
TO92 Compatible
ZTX550
ZTX551
3-194
C
B
E
D.C.
1s
100ms
10ms
1.0ms
0.3ms
0.1ms
TYPICAL CHARACTERISTICS
V
CE(sat)
v I
C
IC - Collector Current (Amps)
V
CE
(sa
t
)
- (V
olts)
IC - Collector Current (Amps)
V
BE(sat)
v I
C
V
BE(on)
v I
C
V
BE
(sa
t
)
- (V
olts)
-0.6
-0.01
-10-0.1 -1
-0.7
-0.8
-0.9
-1.0
0
-0.01
-0.1
-10-1
-0.2
-0.4
-0.6
-0.8
ZTX550
I
C
/I
B
=10
ZTX551
I
C
-
Collector Current (Amps)
h
FE
v I
C
h
F
E
- Normalised
G
a
in (%
)
-0.001
-0.01
-10-0.1 -1
20
40
60
80
100
ZTX551
IC - Collector Current (Amps)
V
BE
- (V
olts)
-0.8
-1.0
-1.2
-1.4
-0.01
-0.1
-1 -10
-0.6
I
C
-
C
o
l
le
c
to
r
C
u
r
r
e
nt
(
Amps
)
VCE - Collector Voltage (Volts)
Safe Operating Area
0.1 100110
0.01
0.1
1
10
Single Pulse Test at T
amb
=25°C
ZTX550
ZTX551
ZTX550
ZTX551
3-195
PNP SILICON PLANAR
MEDIUM POWER TRANSISTORS
ISSUE 1  MARCH 94
FEATURES
* 60 Volt V
CEO
* 1 Amp continuous current
*P
tot
= 1 Watt
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL ZTX550 ZTX551 UNIT
Collector-Base Voltage V
CBO
-60 -80 V
Collector-Emitter Voltage V
CEO
-45 -60 V
Emitter-Base Voltage V
EBO
-5 V
Peak Pulse Current I
CM
-2 A
Continuous Collector Current I
C
-1 A
Power Dissipation: at T
amb
=25°C
derate above 25°C
P
tot
1
5.7
W
mW/ °C
Operating and Storage Temperature Range T
j
:T
stg
-55 to +200 °C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
PARAMETER SYMBOL ZTX550 ZTX551 UNIT CONDITIONS.
MIN. MAX. MIN. MAX.
Collector-Base
Breakdown Voltage
V
(BR)CBO
-60 -80 V
I
C
=-100µA
Collector-Emitter
Sustaining Voltage
V
CEO(sus)
-45 -60 V I
C
=-10mA*
Emitter-Base
Breakdown Voltage
V
(BR)EBO
-5 -5 V
I
E
=-100µA
Collector Cut-Off
Current
I
CBO
-0.1
-0.1
µA
µA
V
CB
=-45V
V
CB
=-60V
Emitter Cut-Off
Current
I
EBO
-0.1 -0.1
µA
V
EB
=-4V
Collector-Emitter
Saturation Voltage
V
CE(sat)
-0.25 -0.35 V I
C
=-150mA,
I
B
=-15mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
-1.1 -1.1 V I
C
=-150mA,
I
B
=-15mA*
Static Forward
Current Transfer
Ratio
h
FE
100
15
300 50
10
150 I
C
=-150mA,
V
CE
=-10V*
I
C
=-1A, V
CE
=-10V*
Transition
Frequency
f
T
150 150 MHz I
C
=-50mA, V
CE
=-10V
f=100MHz
E-Line
TO92 Compatible
ZTX550
ZTX551
3-194
C
B
E
D.C.
1s
100ms
10ms
1.0ms
0.3ms
0.1ms
TYPICAL CHARACTERISTICS
V
CE(sat)
v I
C
IC - Collector Current (Amps)
V
CE
(sa
t
)
- (V
olts)
IC - Collector Current (Amps)
V
BE(sat)
v I
C
V
BE(on)
v I
C
V
BE
(sa
t
)
- (V
olts)
-0.6
-0.01
-10-0.1 -1
-0.7
-0.8
-0.9
-1.0
0
-0.01
-0.1
-10-1
-0.2
-0.4
-0.6
-0.8
ZTX550
I
C
/I
B
=10
ZTX551
I
C
-
Collector Current (Amps)
h
FE
v I
C
h
F
E
- Normalised
G
a
in (%
)
-0.001
-0.01
-10-0.1 -1
20
40
60
80
100
ZTX551
IC - Collector Current (Amps)
V
BE
- (V
olts)
-0.8
-1.0
-1.2
-1.4
-0.01
-0.1
-1 -10
-0.6
I
C
-
C
o
l
le
c
to
r
C
u
r
r
e
nt
(
Amps
)
VCE - Collector Voltage (Volts)
Safe Operating Area
0.1 100110
0.01
0.1
1
10
Single Pulse Test at T
amb
=25°C
ZTX550
ZTX551
ZTX550
ZTX551
3-195

ZTX551STOB

Mfr. #:
Manufacturer:
Diodes Incorporated
Description:
Bipolar Transistors - BJT PNP Medium Power
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union