Features
Fast Read Access Time – 120 ns
Automatic Page Write Operation
Internal Address and Data Latches for 128 Bytes
Internal Control Timer
Fast Write Cycle Time
Page Write Cycle Time – 10 ms Maximum
1 to 128-byte Page Write Operation
Low Power Dissipation
40 mA Active Current
200 µA CMOS Standby Current
Hardware and Software Data Protection
DATA Polling for End of Write Detection
High Reliability CMOS Technology
Endurance: 10
4
or 10
5
Cycles
Data Retention: 10 Years
Single 5V ± 10% Supply
CMOS and TTL Compatible Inputs and Outputs
JEDEC Approved Byte-wide Pinout
Industrial Temperature Ranges
Green (Pb/Halide-free) Packaging Option Only
1. Description
The AT28C010 is a high-performance electrically-erasable and programmable read-
only memory. Its 1 megabit of memory is organized as 131,072 words by 8 bits. Man-
ufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers
access times to 120 ns with power dissipation of just 220 mW. When the device is
deselected, the CMOS standby current is less than 200 µA.
The AT28C010 is accessed like a Static RAM for the read or write cycle without the
need for external components. The device contains a 128-byte page register to allow
writing of up to 128 bytes simultaneously. During a write cycle, the address and 1 to
128 bytes of data are internally latched, freeing the address and data bus for other
operations. Following the initiation of a write cycle, the device will automatically write
the latched data using an internal control timer. The end of a write cycle can be
detected by DATA
polling of I/O7. Once the end of a write cycle has been detected a
new access for a read or write can begin.
Atmel’s AT28C010 has additional features to ensure high quality and manufacturabil-
ity. The device utilizes internal error correction for extended endurance and improved
data retention characteristics. An optional software data protection mechanism is
available to guard against inadvertent writes. The device also includes an extra
128 bytes of EEPROM for device identification or tracking.
1-megabit
(128K x 8)
Paged Parallel
EEPROM
AT28C010
0353I–PEEPR–08/09
2
0353I–PEEPR–08/09
AT28C010
2. Pin Configurations
2.1 32-lead TSOP Top View
Pin Name Function
A0 - A16 Addresses
CE Chip Enable
OE
Output Enable
WE
Write Enable
I/O0 - I/O7 Data Inputs/Outputs
NC No Connect
DC Don’t Connect
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
A11
A9
A8
A13
A14
NC
WE
VCC
NC
A16
A15
A12
A7
A6
A5
A4
OE
A10
CE
I/O7
I/O6
I/O5
I/O4
I/O3
GND
I/O2
I/O1
I/O0
A0
A1
A2
A3
2.2 32-lead PLCC Top View
Note: PLCC package pin 1 is Don’t Connect.
5
6
7
8
9
10
11
12
13
29
28
27
26
25
24
23
22
21
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
A14
A13
A8
A9
A11
OE
A10
CE
I/O7
4
3
2
1
32
31
30
14
15
16
17
18
19
20
I/O1
I/O2
GND
I/O3
I/O4
I/O5
I/O6
A12
A15
A16
DC
VCC
WE
NC
3
0353I–PEEPR–08/09
AT28C010
3. Block Diagram
4. Device Operation
4.1 Read
The AT28C010 is accessed like a Static RAM. When CE and OE are low and WE is high, the
data stored at the memory location determined by the address pins is asserted on the outputs.
The outputs are put in the high impedance state when either CE
or OE is high. This dual-line
control gives designers flexibility in preventing bus contention in their system.
4.2 Byte Write
A low pulse on the WE or CE input with CE or WE low (respectively) and OE high initiates a write
cycle. The address is latched on the falling edge of CE
or WE, whichever occurs last. The data is
latched by the first rising edge of CE
or WE. Once a byte write has been started it will automati-
cally time itself to completion. Once a programming operation has been initiated and for the
duration of t
WC
, a read operation will effectively be a polling operation.
4.3 Page Write
The page write operation of the AT28C010 allows 1 to 128 bytes of data to be written into the
device during a single internal programming period. A page write operation is initiated in the
same manner as a byte write; the first byte written can then be followed by 1 to 127 additional
bytes. Each successive byte must be written within 150 µs (t
BLC
) of the previous byte. If the t
BLC
limit is exceeded the AT28C010 will cease accepting data and commence the internal program-
ming operation. All bytes during a page write operation must reside on the same page as
defined by the state of the A7 - A16 inputs. For each WE
high to low transition during the page
write operation, A7 - A16 must be the same.
The A0 to A6 inputs are used to specify which bytes within the page are to be written. The bytes
may be loaded in any order and may be altered within the same load period. Only bytes which
are specified for writing will be written; unnecessary cycling of other bytes within the page does
not occur.
4.4 DATA Polling
The AT28C010 features DATA Polling to indicate the end of a write cycle. During a byte or page
write cycle an attempted read of the last byte written will result in the complement of the written
data to be presented on I/O
7
. Once the write cycle has been completed, true data is valid on all
outputs, and the next write cycle may begin. DATA
Polling may begin at anytime during the write
cycle.

AT28C010-12JU-235

Mfr. #:
Manufacturer:
Microchip Technology / Atmel
Description:
EEPROM 120NS, PLCC, IND TEMP, GREEN - test to 105C
Lifecycle:
New from this manufacturer.
Delivery:
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