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0353I–PEEPR–08/09
AT28C010
4.5 Toggle Bit
In addition to DATA Polling the AT28C010 provides another method for determining the end of a
write cycle. During the write operation, successive attempts to read data from the device will
result in I/O6 toggling between one and zero. Once the write has completed, I/O6 will stop tog-
gling and valid data will be read. Reading the toggle bit may begin at any time during the write
cycle.
4.6 Data Protection
If precautions are not taken, inadvertent writes may occur during transitions of the host system
power supply. Atmel
®
has incorporated both hardware and software features that will protect the
memory against inadvertent writes.
4.6.1 Hardware Protection
Hardware features protect against inadvertent writes to the AT28C010 in the following ways: (a)
V
CC
sense – if V
CC
is below 3.8V (typical) the write function is inhibited; (b) V
CC
power-on delay –
once V
CC
has reached 3.8V the device will automatically time out 5 ms (typical) before allowing
a write; (c) write inhibit – holding any one of OE
low, CE high or WE high inhibits write cycles;
and (d) noise filter—pulses of less than 15 ns (typical) on the WE
or CE inputs will not initiate a
write cycle.
4.6.2 Software Data Protection
A software controlled data protection feature has been implemented on the AT28C010. When
enabled, the software data protection (SDP), will prevent inadvertent writes. The SDP feature
may be enabled or disabled by the user; the AT28C010 is shipped from Atmel with SDP
disabled.
SDP is enabled by the host system issuing a series of three write commands; three specific
bytes of data are written to three specific addresses (refer to Software Data Protection Algo-
rithm). After writing the 3-byte command sequence and after t
WC
the entire AT28C010 will be
protected against inadvertent write operations. It should be noted, that once protected the host
may still perform a byte or page write to the AT28C010. This is done by preceding the data to be
written by the same 3-byte command sequence used to enable SDP.
Once set, SDP will remain active unless the disable command sequence is issued. Power transi-
tions do not disable SDP and SDP will protect the AT28C010 during power-up and power-down
conditions. All command sequences must conform to the page write timing specifications. The
data in the enable and disable command sequences is not written to the device and the memory
addresses used in the sequence may be written with data in either a byte or page write
operation.
After setting SDP, any attempt to write to the device without the 3-byte command sequence will
start the internal write timers. No data will be written to the device; however, for the duration of
t
WC
, read operations will effectively be polling operations.
4.7 Device Identification
An extra 128 bytes of EEPROM memory are available to the user for device identification. By
raising A9 to 12V ± 0.5V and using address locations 1FF80H to 1FFFFH the bytes may be writ-
ten to or read from in the same manner as the regular memory array.
4.8 Optional Chip Erase Mode
The entire device can be erased using a 6-byte software code. Please see Software Chip Erase
application note for details.
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0353I–PEEPR–08/09
AT28C010
Notes: 1. X can be V
IL
or V
IH
.
2. Refer to AC Programming Waveforms.
5. DC and AC Operating Range
AT28C010-12 AT28C010-15
Operating Temperature (Case)
Ind. -40°C - 85°C -40°C - 85°C
V
CC
Power Supply 5V ± 10% 5V ± 10%
6. Operating Modes
Mode CE OE WE I/O
Read V
IL
V
IL
V
IH
D
OUT
Write
(2)
V
IL
V
IH
V
IL
D
IN
Standby/Write Inhibit V
IH
X
(1)
X High Z
Write Inhibit X X V
IH
Write Inhibit X V
IL
X
Output Disable X V
IH
X High Z
7. Absolute Maximum Ratings*
Temperature Under Bias................................ -55°C to +125°C
*NOTICE: Stresses beyond those listed under “Absolute
Maximum Ratings” may cause permanent dam-
age to the device. This is a stress rating only and
functional operation of the device at these or any
other conditions beyond those indicated in the
operational sections of this specification is not
implied. Exposure to absolute maximum rating
conditions for extended periods may affect
device reliability
Storage Temperature ..................................... -65°C to +150°C
All Input Voltages
(including NC Pins)
with Respect to Ground ...................................-0.6V to +6.25V
All Output Voltages
with Respect to Ground .............................-0.6V to V
CC
+ 0.6V
Voltage on OE
and A9
with Respect to Ground ...................................-0.6V to +13.5V
8. DC Characteristics
Symbol Parameter Condition Min Max Units
I
LI
Input Load Current V
IN
= 0V to V
CC
+ 1V 10 μA
I
LO
Output Leakage Current V
I/O
= 0V to V
CC
10 μA
I
SB1
V
CC
Standby Current CMOS CE = V
CC
- 0.3V to V
CC
+ 1V 200 μA
I
SB2
V
CC
Standby Current TTL CE = 2.0V to V
CC
+ 1V 3 mA
I
CC
V
CC
Active Current f = 5 MHz; I
OUT
= 0 mA 40 mA
V
IL
Input Low Voltage 0.8 V
V
IH
Input High Voltage 2.0 V
V
OL
Output Low Voltage I
OL
= 2.1 mA 0.45 V
V
OH1
Output High Voltage I
OH
= -400 µA 2.4 V
V
OH2
Output High Voltage CMOS I
OH
= -100 µA; V
CC
= 4.5V 4.2 V
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0353I–PEEPR–08/09
AT28C010
10. AC Read Waveforms
(1)(2)(3)(4)
Notes: 1. CE may be delayed up to t
ACC
- t
CE
after the address transition without impact on t
ACC
.
2. OE
may be delayed up to t
CE
- t
OE
after the falling edge of CE without impact on t
CE
or by t
ACC
- t
OE
after an address change
without impact on t
ACC
.
3. t
DF
is specified from OE or CE whichever occurs first (C
L
= 5 pF).
4. This parameter is characterized and is not 100% tested.
5. If CE is de-asserted, it must remain de-asserted for at least 50ns during read operations otherwise incorrect data may be
read.
9. AC Read Characteristics
Symbol Parameter
AT28C010-12 AT28C010-15
UnitsMin Max Min Max
t
ACC
Address to Output Delay 120 150 ns
t
CE
(1)
CE to Output Delay 120 150 ns
t
OE
(2)
OE to Output Delay 0 50 0 55 ns
t
DF
(3)(4)
CE or OE to Output Float 0 50 0 55 ns
t
OH
Output Hold from OE, CE or Address, Whichever
Occurred First
00ns
t
CEPH
(5)
CE Pulse High Time 50 50 ns
t
CEPH

AT28C010-12JU

Mfr. #:
Manufacturer:
Microchip Technology / Atmel
Description:
EEPROM 1M 5V SDP - 120NS IND TEMP
Lifecycle:
New from this manufacturer.
Delivery:
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