VS-HFA15TB60S-M3, VS-HFA15TB60-1-M3
www.vishay.com
Vishay Semiconductors
Revision: 27-Oct-17
1
Document Number: 96313
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
HEXFRED
®
,
Ultrafast Soft Recovery Diode, 15 A
FEATURES
• Ultrafast and ultrasoft recovery
• Very low I
RRM
and Q
rr
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C
• Designed and qualified for industrial level
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
BENEFITS
• Reduced RFI and EMI
• Reduced power loss in diode and switching transistor
• Higher frequency operation
• Reduced snubbing
• Reduced parts count
DESCRIPTION
VS-HFA15TB60S, VS-HFA15TB60-1 is a state of the art
ultrafast recovery diode. Employing the latest in epitaxial
construction and advanced processing techniques it
features a superb combination of characteristics which
result in performance which is unsurpassed by any rectifier
previously available. With basic ratings of 600 V and
15 A continuous current, the VS-HFA15TB60S,
VS-HFA15TB60-1 is especially well suited for use as the
companion diode for IGBTs and MOSFETs. In addition to
ultrafast recovery time, the HEXFRED
®
product line features
extremely low values of peak recovery current (I
RRM
) and
does not exhibit any tendency to “snap-off” during the t
b
portion of recovery. The HEXFRED features combine to offer
designers a rectifier with lower noise and significantly lower
switching losses in both the diode and the switching
transistor. These HEXFRED advantages can help to
significantly reduce snubbing, component count and
heatsink sizes. The HEXFRED VS-HFA15TB60S,
VS-HFA15TB60-1 is ideally suited for applications in power
supplies and power conversion systems (such as inverters),
motor drives, and many other similar applications where
high speed, high efficiency is needed.
PRIMARY CHARACTERISTICS
I
F(AV)
15 A
V
R
600 V
V
F
at I
F
1.2 V
t
rr
(typ.) 23 ns
T
J
max. 150 °C
Package D
2
PAK (TO-263AB), TO-262AA
Circuit configuration Single
D
2
PAK (TO-263AB)
TO-262AA
1
3
2
1
3
2
Ba
se
cathode
Anode
1
3
2
N/C
N/C
Anode
1
3
2
VS-HFA15 TB60S-M3 VS-HFA15 TB60-1-M3
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Cathode to anode voltage V
R
600 V
Maximum continuous forward current I
F
T
C
= 100 °C 15
ASingle pulse forward current I
FSM
150
Maximum repetitive forward current I
FRM
60
Maximum power dissipation P
D
T
C
= 25 °C 74
W
T
C
= 100 °C 29
Operating junction and storage temperature range T
J
, T
Stg
-55 to +150 °C