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NTS1545MFST1G

P1-P3P4-P5
© Semiconductor Components Industries, LLC, 2014
July, 2014 − Rev. 0
1 Publication Order Number:
NTS1545MFS/D
NTS1545MFS,
NRVTS1545MFS
Exceptionally Low Forward
Voltage Trench-based
Schottky Rectifier
Features
• Fine Lithography Trench−based Schottky Technology for Very Low
Forward Voltage and Low Leakage
• Fast Switching with Exceptional Temperature Stability
• Low Power Loss and Lower Operating Temperature
• Higher Efficiency for Achieving Regulatory Compliance
• Low Thermal Resistance
• High Surge Capability
• NRV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These are Pb−Free and Halide−Free Devices
Typical Applications
• Switching Power Supplies including Wireless, Smartphone and
Notebook Adapters
• High Frequency and DC−DC Converters
• Freewheeling and OR−ing diodes
• Reverse Battery Protection
• Instrumentation
Mechanical Characteristics:
• Case: Epoxy, Molded
• Epoxy Meets Flammability Rating UL 94−0 @ 0.125 in.
• Lead Finish: 100% Matte Sn (Tin)
• Lead and Mounting SurfaceTemperature for Soldering Purposes:
260°C Max. for 10 Seconds
• Device Meets MSL 1 Requirements
Device Package Shipping†
ORDERING INFORMATION
NTS1545MFST1G SO−8 FL
(Pb−Free)
1500 /
Tape & Reel
SCHOTTKY BARRIER
RECTIFIERS
15 AMPERES
45 VOLTS
http://onsemi.com
1,2,3
5,6
SO−8 FLAT LEAD
CASE 488AA
STYLE 2
TH1545 = Specific Device Code
A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceability
MARKING
DIAGRAM
TH1545
AYWWZZ
A
A
A
Not Used
C
C
1
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
NTS1545MFST3G SO−8 FL
(Pb−Free)
5000 /
Tape & Reel
NRVTS1545MFST1G SO−8 FL
(Pb−Free)
1500 /
Tape & Reel
NRVTS1545MFST3G SO−8 FL
(Pb−Free)
5000 /
Tape & Reel
NTS1545MFS, NRVTS1545MFS
http://onsemi.com
2
MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
45
V
Average Rectified Forward Current
(Rated V
R
, T
C
= 142°C)
I
F(AV)
15 A
Peak Repetitive Forward Current,
(Rated V
R
, Square Wave, 20 kHz, T
C
= 140°C)
I
FRM
30 A
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
I
FSM
210 A
Storage Temperature Range T
stg
−65 to +150 °C
Operating Junction Temperature T
J
−55 to +150 °C
Unclamped Inductive Switching Energy (10 mH Inductor, Non−repetitive) E
AS
100 mJ
ESD Rating (Human Body Model) 3B
ESD Rating (Machine Model) M4
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic Symbol Typ Max Unit
Thermal Resistance, Junction−to−Case, Steady State
(Assumes 600 mm
2
1 oz. copper bond pad, on a FR4 board)
R
θ
JC
1.3 − °C/W
ELECTRICAL CHARACTERISTICS
Instantaneous Forward Voltage (Note 1)
(i
F
= 5.0 Amps, T
J
= 25°C)
(i
F
= 7.5 Amps, T
J
= 25°C)
(i
F
= 15 Amps, T
J
= 25°C)
(i
F
= 5.0 Amps, T
J
= 125°C)
(i
F
= 7.5 Amps, T
J
= 125°C)
(i
F
= 15 Amps, T
J
= 125°C)
v
F
0.42
0.45
0.48
0.31
0.34
0.40
−
−
0.57
−
−
0.51
V
Instantaneous Reverse Current (Note 1)
(Rated dc Voltage, T
J
= 25°C)
(Rated dc Voltage, T
J
= 125°C)
i
R
−
15
120
45
mA
mA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
NTS1545MFS, NRVTS1545MFS
http://onsemi.com
3
TYPICAL CHARACTERISTICS
Figure 1. Typical Instantaneous Forward
Characteristics
Figure 2. Maximum Instantaneous Forward
Characteristics
V
F
, INSTANTANEOUS FORWARD VOLTAGE (V) V
F
, INSTANTANEOUS FORWARD VOLTAGE (V)
0.70.5 0.90.40.30.20.10
0.1
1
10
100
0.80.60.50.30.20.10
0.1
1
10
100
Figure 3. Typical Reverse Characteristics Figure 4. Maximum Reverse Characteristics
V
R
, INSTANTANEOUS REVERSE VOLTAGE (V) V
R
, INSTANTANEOUS REVERSE VOLTAGE (V)
40302520151050
1.E−06
453530201050
Figure 5. Typical Junction Capacitance
V
R
, REVERSE VOLTAGE (V)
1
100
1000
10,000
i
F
, INSTANTANEOUS FORWARD
CURRENT (A)
I
R
, INSTANTANEOUS REVERSE CURRENT (A)C, JUNCTION CAPACITANCE (pF)
0.9
i
F
, INSTANTANEOUS FORWARD
CURRENT (A)
35 45
1.E−05
1.E−04
1.E−03
1.E−02
1.E−01
1.E+00
15 25
1.E−05
1.E−04
1.E−03
1.E−02
1.E+00
I
R
, INSTANTANEOUS REVERSE CURRENT (A)
10 50
T
A
= 150°C
T
A
= 125°C
T
A
= −55°C
T
A
= 25°C
T
A
= 150°C
T
A
= 125°C
T
A
= −55°C
T
A
= 25°C
T
A
= 150°C
T
A
= 125°C
T
A
= 25°C
T
A
= 150°C
T
A
= 125°C
T
A
= 25°C
1.E−01
Figure 6. Current Derating
T
C
, CASE TEMPERATURE (°C)
1401301101009080
0
5
10
15
25
30
I
F(AV)
, AVERAGE FORWARD CURRENT (A)
20
120 150
Square Wave
DC
R
q
JC
= 1.3°C/W
T
J
= 25°C
0.6 0.8 0.4 0.7
40
P1-P3P4-P5

NTS1545MFST1G

Mfr. #:
Buy NTS1545MFST1G
Manufacturer:
ON Semiconductor
Description:
Schottky Diodes & Rectifiers 45V TRENCH RECTIFIER
Lifecycle:
New from this manufacturer.
Delivery:
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