Product Standards
Transistors with Built-in Resistor
DRC9A14E0L
Absolute Maximum Ratings Ta = 25 C
Electrical Characteristics Ta = 25 C 3 C
Note
1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors.
Page
Emitter
Collector
JH
3 000 pcs / reel (standard)
10
k
R2
10
°C
+150 °C
R1
+85 °C
V
2.1
Resistance ratio
Collector-emitter saturation voltage VCE(sat)
IC = 10 mA, IB = 0.5 mA
VCE = 5 V, IC = 100 μA
V
0.8 V
mA
35 -
0.5
Input voltage
Vi(on)
VCE = 0.2 V, IC = 5 mA
Vi(off)
0.25
Forward current transfer ratio hFE
VCE = 10 V, IC = 5 mA
Collector-emitter cutoff current (Base open)
ICEO
VCE = 50 V, IB = 0
Emitter-base cutoff current (Collector open)
IEBO
VEB = 6 V, IC = 0
0.5
Collector-emitter voltage (Base open) VCEO
IC = 2 mA, IB = 0 50
0.1 μA
Collector-base cutoff current (Emitter open)
50
Symbol Conditions
ICBO
VCB = 50 V, IE = 0
Parameter
Collector-base voltage (Emitter open) VCBO
IC = 10 μA, IE = 0
Junction temperature Tj 150
VCEO 50 V
Storage temperature Tstg -55 to
Total power dissipation PT 125
50 V
Internal Connection
Resistance
value
mW
Collector current IC 80 mA
Collector-emitter voltage (Base open)
1of3
Min Typ Max Unit
0.8 1.0
Unit: mm
Base
SC-89
Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)
Low collector-emitter saturation voltage Vce(sat)
Marking Symbol:
DRC9A14E0L
Silicon NPN epitaxial planar type
For digital circuits
Complementary to DRA9A14E
DRC5A14E in SSMini3 type package
Features
Code SOT-490
Panasonic
Packaging
SSMini3-F3-B
JEITA
1.
2.
3.
Embossed type (Thermo-compression sealing) :
Parameter Symbol Rating Unit
Operating ambient temperature Topr -40 to
Collector-base voltage (Emitter open) VCBO
1.2
k
V
V
μA
Input resistance
-
R1
-30% 10 +30%
k
R1/R2
1.6
1.6
0.7
0.85
0.130.26
(0.5)
1.0
12
3
(0.5)
C
B
R
1
R
2
E
