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NTP52N10G

P1-P3P4-P6P7-P7
© Semiconductor Components Industries, LLC, 2006
March, 2006 − Rev. 4
1 Publication Order Number:
NTP52N10/D
NTP52N10
Power MOSFET
60 Amps, 100 Volts
N−Channel Enhancement Mode TO−220
Features
• Source−to−Drain Diode Recovery Time comparable to a Discrete
Fast Recovery Diode
• Avalanche Energy Specified
• I
DSS
and R
DS(on)
Specified at Elevated Temperature
• Pb−Free Package is Available*
Applications
• PWM Motor Controls
• Power Supplies
• Converters
MAXIMUM RATINGS (T
C
= 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain−to−Source Voltage V
DSS
100 Vdc
Drain−to−Source Voltage (R
GS
= 1.0 MW)
V
DGR
100 Vdc
Gate−to−Source Voltage
− Continuous
− Non−Repetitive (t
p
v10 ms)
V
GS
V
GSM
"20
"40
Vdc
Drain
− Continuous @ T
A
25°C
− Continuous @ T
A
100°C
− Pulsed (Note 1.)
I
D
I
D
I
DM
60
40
156
Adc
Total Power Dissipation @ T
A
25°C
Derate above 25°C
P
D
214
1.43
Watts
W/°C
Operating and Storage Temperature Range T
J
, T
stg
−55 to
+175
°C
Single Drain−to−Source Avalanche Energy
− Starting T
J
= 25°C
(V
DD
= 50 V, V
GS
= 10 Vdc,
I
L
(pk) = 40 A, L = 1.0 mH, R
G
= 25 W)
E
AS
800 mJ
Thermal Resistance
− Junction−to−Case
− Junction−to−Ambient
R
q
JC
R
q
JA
0.7
62.5
°C/W
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10 seconds
T
L
260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Pulse Test: Pulse Width = 10 ms, Duty Cycle = 2%.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
60 AMPERES
100 VOLTS
30 mW @ V
GS
= 10 V
TO−220
CASE 221A
STYLE 5
1
2
3
4
N−Channel
D
S
G
MARKING DIAGRAM &
PIN ASSIGNMENT
NTP52N10G
AYWW
D
http://onsemi.com
S
D
G
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
Device Package Shipping
ORDERING INFORMATION
NTP52N10 TO−220 50 Units / Rail
NTP52N10G TO−220
(Pb−Free)
50 Units / Rail
1
NTP52N10
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
C
= 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
(V
GS
= 0 Vdc, I
D
= 250 mAdc)
Temperature Coefficient (Positive)
V
(BR)DSS
100
−
−
160
−
−
Vdc
mV/°C
Zero Gate Voltage Drain Current
(V
GS
= 0 Vdc, V
DS
= 100 Vdc, T
J
=25°C)
(V
GS
= 0 Vdc, V
DS
= 100 Vdc, T
J
=125°C)
I
DSS
−
−
−
−
5.0
50
mAdc
Gate−Body Leakage Current (V
GS
= ± 20 Vdc, V
DS
= 0 Vdc) I
GSS
− − ±100 nAdc
ON CHARACTERISTICS
Gate Threshold Voltage
(V
DS
= V
GS
, I
D
= 250 mAdc)
Temperature Coefficient (Negative)
V
GS(th)
2.0
−
2.92
−8.75
4.0
−
Vdc
mV/°C
Static Drain−to−Source On−State Resistance
(V
GS
= 10 Vdc, I
D
= 26 Adc)
(V
GS
= 10 Vdc, I
D
= 26 Adc, T
J
= 125°C)
R
DS(on)
−
−
0.023
0.050
0.030
0.060
W
Drain−to−Source On−Voltage
(V
GS
= 10 Vdc, I
D
= 52 Adc)
V
DS(on)
− 1.25 1.45
Vdc
Forward Transconductance (V
DS
= 26 Vdc, I
D
= 10 Adc) g
FS
− 31 − Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
DS
= 25 Vdc, V
GS
= 0 Vdc,
f = 1.0 MHz)
C
iss
− 2250 3150 pF
Output Capacitance C
oss
− 620 860
Transfer Capacitance C
rss
− 135 265
SWITCHING CHARACTERISTICS (Notes 2. & 3.)
Turn−On Delay Time
(V
DD
= 80 Vdc, I
D
= 52 Adc,
V
GS
= 10 Vdc, R
G
= 9.1 W)
t
d(on)
− 15 25 ns
Rise Time t
r
− 95 180
Turn−Off Delay Time t
d(off)
− 74 150
Fall Time t
f
− 100 190
Gate Charge
(V
DS
= 80 Vdc, I
D
= 52 Adc,
V
GS
= 10 Vdc)
Q
tot
− 72 135 nC
Q
gs
− 13 −
Q
gd
− 37 −
BODY−DRAIN DIODE RATINGS (Note 2.)
Diode Forward On−Voltage (I
S
= 52 Adc, V
GS
= 0 Vdc)
(I
S
= 52 Adc, V
GS
= 0 Vdc, T
J
= 125°C)
V
SD
−
−
1.06
0.95
1.5
−
Vdc
Reverse Recovery Time
(I
S
= 52 Adc, V
GS
= 0 Vdc,
di
S
/dt = 100 A/ms)
t
rr
− 148 −
ns
t
a
− 106 −
t
b
− 42 −
Reverse Recovery Stored Charge Q
RR
− 0.66 −
mC
2. Indicates Pulse Test: P.W. = 300 ms Max, Duty Cycle = 2%.
3. Switching characteristics are independent of operating junction temperature.
NTP52N10
http://onsemi.com
3
T
J
= −55°C
T
J
= 100°C
100
10
1000
10000
60
40
80
20
0
100
0
60
231
I
D
, DRAIN CURRENT (AMPS)
0
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
I
D
, DRAIN CURRENT (AMPS)
10
0.01
30
0
20 40 50 100
Figure 3. On−Resistance versus
Drain Current and Temperature
I
D
, DRAIN CURRENT (AMPS)
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
I
D
, DRAIN CURRENT (AMPS)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
Figure 5. On−Resistance Variation with
Temperature
T
J
, JUNCTION TEMPERATURE (°C)
Figure 6. Drain−To−Source Leakage
Current versus Voltage
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
I
DSS
, LEAKAGE (nA)
100
−50 100500−25 175
23 6
30 70605040 100
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
20
40
80
10
V
GS
= 0 V
T
J
= 150°C
T
J
= 100°C
I
D
= 26 A
V
GS
= 10 V
V
GS
= 10 V
V
DS
≥ 10 V
T
J
= 25°C
V
GS
= 10 V
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE
(NORMALIZED)
9 V
6 V
25
45
4675
8 V
5.5 V
5 V
87
80
0.02
0.03
0.04
0.05
T
J
= −55°C
T
J
= 100°C
T
J
= 25°C
0
0.01
20 40 60 10080
0.02
0.03
0.04
0.05
T
J
= 25°C
125
0.5
1
1.5
2
2.5
80
0
89
T
J
= 25°C
7 V
4.5 V
4 V
60 70 90
V
GS
= 10 V
V
GS
= 15 V
9075 150
0
P1-P3P4-P6P7-P7

NTP52N10G

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Manufacturer:
ON Semiconductor
Description:
MOSFET 100V 60A N-Channel
Lifecycle:
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