V30100C-E3, VF30100C-E3, VB30100C-E3, VI30100C-E3
www.vishay.com
Vishay General Semiconductor
Revision: 13-Dec-16
1
Document Number: 89010
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Dual High Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low V
F
= 0.455 V at I
F
= 5 A
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020,
LF maximum peak of 245 °C (for TO-263AB
package)
• Low thermal resistance
• Solder bath temperature 275 °C maximum, 10 s, per JESD
22-B106 (for TO-220AB, ITO-220AB, and TO-262AA
package)
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency converters, switching power
supplies, freewheeling diodes, OR-ing diode, DC/DC
converters, and reverse battery protection.
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, TO-263AB, and TO-262AA
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
PRIMARY CHARACTERISTICS
I
F(AV)
2 x 15 A
V
RRM
100 V
I
FSM
160 A
V
F
at I
F
= 15 A 0.63 V
T
J
max. 150 °C
Package TO-220AB, ITO-220AB, TO-263AB, TO-262AA
Diode variation Common cathode
TO-220AB
1
2
3
1
K
2
3
TO-263AB
1
2
K
TO-262AA
PIN 1
PIN 2
PIN 3
K
PIN 1
PIN 2
K
HEATSINK
PIN 1
PIN 2
PIN 3
PIN 1
PIN 2
CASE
PIN 3
C00103FVC00103V
VI30100CVB30100C
TMBS
®
ITO-220AB
1
2
3
MAXIMUM RATINGS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL V30100C VF30100C VB30100C VI30100C UNIT
Maximum repetitive peak reverse voltage V
RRM
100 V
Maximum average forward rectified current (fig. 1)
per device
I
F(AV)
30
A
per diode 15
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
I
FSM
160 A
Non-repetitive avalanche energy at T
J
= 25 °C, L = 60 mH per diode E
AS
210 mJ
Peak repetitive reverse current at t
p
= 2 μs, 1 kHz,
T
J
= 38 °C ± 2 °C per diode
I
RRM
1.0 A
Voltage rate of change (rated V
R
) dV/dt 10 000 V/μs
Isolation voltage (ITO-220AB only) from terminal to heatsink t = 1 min V
AC
1500 V
Operating junction and storage temperature range T
J
, T
STG
-40 to +150 °C
