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Document Number: 62654
S12-0976-Rev. A, 30-Apr-12
Vishay Siliconix
Si3442CDV
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
For technical questions, contact: pmostechsupport@vishay.com
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (T
J
= 25 °C, unless otherwise noted)
Parameter Symbol Test Conditions Min. Typ. Max. Unit
Static
Drain-Source Breakdown Voltage V
DS
V
GS
= 0 V, I
D
= 250 µA 20 V
V
DS
Temperature Coefficient V
DS
/T
J
I
D
= 250 µA
15
mV/°C
V
GS(th)
Temperature Coefficient V
GS(th)
/T
J
- 2.8
Gate-Source Threshold Voltage V
GS(th)
V
DS
= V
GS
, I
D
= 250 µA 0.6 1.5 V
Gate-Source Leakage I
GSS
V
DS
= 0 V, V
GS
= ± 12 V ± 100 nA
Zero Gate Voltage Drain Current I
DSS
V
DS
= 20 V, V
GS
= 0 V 1
µA
V
DS
= 20 V, V
GS
= 0 V, T
J
= 70 °C 10
On-State Drain Current
a
I
D(on)
V
DS
5 V, V
GS
= 10 V 20 A
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
10 V, I
D
= 6.5 A 0.0225 0.0270
V
GS
4.5 V, I
D
= 5.9 A 0.0250 0.0300
V
GS
2.5 V, I
D
= 2 A 0.0350 0.0490
Forward Transconductance
a
g
fs
V
DS
= 10 V, I
D
= 6.5 A 22 S
Dynamic
b
Input Capacitance C
iss
V
DS
= 10 V, V
GS
= 0 V, f = 1 MHz
335
pFOutput Capacitance C
oss
94
Reverse Transfer Capacitance C
rss
45
Total Gate Charge Q
g
V
DS
= 10 V, V
GS
= 10 V, I
D
= 5 A 9.2 14
nC
V
DS
= 10 V, V
GS
= 4.5 V, I
D
= 5 A
4.3 7
Gate-Source Charge Q
gs
1.1
Gate-Drain Charge Q
gd
0.9
Gate Resistance R
g
f = 1 MHz 0.6 3 6
Tur n - O n D e l ay Time t
d(on)
V
DD
= 10 V, R
L
= 1.9
I
D
5.2 A, V
GEN
= 4.5 V, R
g
= 1
918
ns
Rise Time t
r
13 20
Turn-Off Delay Time t
d(off)
17 26
Fall Time t
f
510
Tur n - O n D e l ay Time t
d(on)
V
DD
= 10 V, R
L
= 1.9
I
D
5.2 A, V
GEN
= 10 V, R
g
= 1
36
Rise Time t
r
10 20
Turn-Off Delay Time t
d(off)
13 20
Fall Time t
f
612
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current I
S
T
C
= 25 °C 2.2
A
Pulse Diode Forward Current I
SM
20
Body Diode Voltage V
SD
I
S
= 5.2 A, V
GS
0 V 0.8 1.2 V
Body Diode Reverse Recovery Time t
rr
I
F
= 5.2 A, dI/dt = 100 A/µs, T
J
= 25 °C
10 20 ns
Body Diode Reverse Recovery Charge Q
rr
36nC
Reverse Recovery Fall Time t
a
6
ns
Reverse Recovery Rise Time t
b
4
