BCW68HTA Datasheet BCW68HTA | P1-P3

BCW68H

Document number: DS33004 Rev. 6 - 2

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45V PNP MEDIUM POWER TRANSISTOR IN SOT23

Features

• BV

CEO

> -45V

• I

C

= -800mA high Continuous Collector Current

• Low Saturation Voltage V

CE(sat)

< -300mV @ 100mA

• Complementary NPN Type: BCW66H

• Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: SOT23

• Case Material: molded plastic, “Green” molding compound

• UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Finish – Matte Tin Plated Leads, Solderable per

MIL-STD-202, Method 208

• Weight 0.008 grams (approximate)

Ordering Information (Note 4)

Part Number Marking Reel size (inches) Tape width (mm) Quantity per reel

BCW68HTA DH 7 8 3,000

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com.

Marking Information

SOT23

Device Symbol

Top View

Pin Configuration

Top View

C

E

B

DH = Product Type Marking Code

DH

C

E

B

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Maximum Ratings (@T

A

= +25°C, unless otherwise specified.)

Characteristic Symbol Value Unit

Collector-Base Voltage

V

CES

-60 V

Collector-Emitter Voltage

V

CEO

-45 V

Emitter-Base Voltage

V

EBO

-7 V

Continuous Collector Current

I

C

-800 mA

Peak Pulse Current

I

CM

-1000 mA

Base Current

I

B

-100 mA

Thermal Characteristics (@T

A

= +25°C, unless otherwise specified.)

Characteristic Symbol Value Unit

Power Dissipation

(Note 5)

P

D

310

mW

(Note 6) 350

Thermal Resistance, Junction to Ambient

(Note 5)

R

θJA

403

°C/W

(Note 6) 357

Thermal Resistance, Junction to Leads (Note 7)

R

θJL

350

°C/W

Operating and Storage Temperature Range

T

J,

T

STG

-55 to +150

°C

Notes: 5. For the device mounted on minimum recommended pad layout FR4 PCB with high coverage of single sided 1oz copper in still air condition; the device is

measured when operating in a steady-state condition.

6. Same as note (5), except the device is mounted on 15mm x 15mm FR4 PCB.

7. Thermal resistance from junction to solder-point (at the end of the leads).

0 255075100125150

0.0

0.1

0.2

0.3

0.4

Derating Curve

Temperature (°C)

Max Power Dissipation (W)

100µ 1m 10m 100m 1 10 100 1k

0

50

100

150

200

250

300

350

400

Transient Thermal Impedance

D=0.5

D=0.2

D=0.1

Single Pulse

D=0.05

Thermal Resistance (°C/W)

Pulse Width (s)

10m 100m 1 10 100 1k

0.1

1

10

Single Pulse. T

amb

=25°C

Pulse Power Dissipation

Pulse Width (s)

Max Power Dissipation (W)

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Electrical Characteristics (@T

A

= +25°C, unless otherwise specified.)

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS

Collector-Base Breakdown Voltage

BV

CES

-60 — — V

I

C

= -10µA

Collector-Emitter Breakdown Voltage

(base open) (Note 8)

BV

CEO

-45 — — V

I

CEO

= -10mA

Emitter-Base Breakdown Voltage

BV

EBO

-7 — — V

I

EBO

= -10µA

Collector-emitter cut-off current

I

CES

—

<1

—

-20

-10

nA

µA

V

CES

= -45V

V

CES

= -45V, T

A

= +150°C

Emitter-base Cut-off Current

I

EBO

— <1 -20 nA

V

EBO

= -5.6V

ON CHARACTERISTICS (Note 8)

Static Forward Current Transfer Ratio

h

FE

250

100

350

—

630

—

I

C

= -100mA, V

CE

= -1V

I

C

= -500mA, V

CE

= -2V

Collector-Emitter Saturation Voltage

V

CE(sat)

—

-700

-300

—

mV

I

C

= -100mA, I

B

= -10mA

I

C

= -500mA, I

B

= -50mA

Base-Emitter Saturation Voltage

V

BE

(

sat

)

— — -2 V

I

C

= -500mA, I

B

= -50mA

SMALL SIGNAL CHARACTERISTICS (Note 8)

Transition Frequency

f

T

100 — — MHz

I

C

= -20mA, V

CE

= -10V,

f = 100MHz

Output Capacitance

C

obo

— 12 18 pF

V

CB

= -10V, f = 1MHz

Input Capacitance

C

ibo

— — 80 pF

V

CB

= -0.5V, f = 1MHz

Noise Figure N — 2 10 dB

I

C

= -0.2mA. V

CE

= -5V,

R

G

= 1KΩ, f = 1KHz,

Δf = 200Hz

Turn-On Time

t

on

— — 100 ns

I

C

= -150mA.

I

B1

= -I

B2

= -15mA

R

L

= 150Ω

Turn-Off Time

t

off

— — 400 ns

Notes: 8. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.

BCW68HTA

BCW68HTA

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