Switching Transistor
NPN Silicon
w This device is available in Pb−free package(s). Specifications herein
apply to both standard and Pb−free devices. Please see our website at
www.onsemi.com for specific Pb−free orderable part numbers, or
contact your local ON Semiconductor sales office or representative.
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage V
CEO
15 Vdc
Collector−Emitter Voltage V
CES
40 Vdc
Collector−Base Voltage V
CBO
40 Vdc
Emitter−Base Voltage V
EBO
5.0 Vdc
Collector Current — Continuous
— 10 ms Pulse
I
C
300
500
mAdc
Total Device Dissipation @ T
A
= 25°C
Derate above 25°C
P
D
625
5.0
mW
mW/°C
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
P
D
1.5
12
Watts
mW/°C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
−55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Ambient
R
q
JA
200 °C/W
Thermal Resistance, Junction to Case
R
q
JC
83.3 °C/W
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Min Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (I
C
= 100 mAdc, V
BE
= 0)
V
(BR)CES
40 — Vdc
Collector−Emitter Sustaining Voltage
(1)
(I
C
= 10 mAdc, I
B
= 0) V
CEO(sus)
15 — Vdc
Collector−Base Breakdown Voltage (I
C
= 100 mAdc, I
E
= 0)
V
(BR)CBO
40 — Vdc
Emitter−Base Breakdown Voltage (I
E
= 100 mAdc, I
C
= 0)
V
(BR)EBO
5.0 — Vdc
Collector Cutoff Current
(V
CE
= 20 Vdc, V
BE
= 0)
(V
CE
= 20 Vdc, V
BE
= 0, T
A
= 65°C)
I
CES
—
—
0.5
3.0
mAdc
ON CHARACTERISTICS
(1)
DC Current Gain (I
C
= 30 mAdc, V
CE
= 0.4 Vdc)
(I
C
= 100 mAdc, V
CE
= 0.5 Vdc)
(I
C
= 300 mA, V
CE
= 1.0 Vdc)
h
FE
30
25
15
120
—
—
—
Collector−Emitter Saturation Voltage (I
C
= 30 mAdc, I
B
= 3.0 mAdc)
(I
C
= 100 mAdc, I
B
= 10 mAdc)
(I
C
= 300 mAdc, I
B
= 30 mAdc)
(I
C
= 30 mA, I
B
= 3.0 mA, T
A
= 65°C)
V
CE(sat)
—
—
—
—
0.2
0.28
0.5
0.3
Vdc
Base −Emitter Saturation Voltage (I
C
= 30 mAdc, I
B
= 3.0 mAdc)
(I
C
= 100 mAdc, I
B
= 10 mAdc)
(I
C
= 300 mAdc, I
B
= 30 mA)
V
BE(sat)
0.73
—
—
0.95
1.2
1.7
Vdc
1. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2.0%.
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
ON Semiconductort
© Semiconductor Components Industries, LLC, 2006
March, 2006 − Rev. 3
1 Publication Order Number:
MPS3646/D
MPS3646
ON Semiconductor Preferred Device
CASE 29−11, STYLE 1
TO−92 (TO−226AA)
1
2
3
COLLECTOR
3
2
BASE
1
EMITTER
