2SD1867TV2 Datasheet 2SD2195T100, 2SD1867TV2 | P1-P3

2SD2195

/

2SD1980

/

2SD1867

Transistors

Rev.B 1/3

Power Transistor (100V, 2A)

2SD2195 / 2SD1980 / 2SD1867

zFeatures

1) Darlington connection for high DC current gain.

2) Built-in resistor between base and emitter.

3) Built-in damper diode.

4) Complements the 2SB1580 / 2SB1316.

zEquivalent circuit

R

1

3.5kΩ

R

2

300Ω

B

C

E

C

B

E

: Base

: Collector

: Emitter

R

1

R

2

zAbsolute maximum ratings (Ta=25°C)

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Collector

power

dissipation

Junction temperature

Storage temperature

∗

1 Single pulse Pw

=

100ms

∗

2 When mounted on a 40 x 40 x 0.7 mm ceramic board.

∗

3

Printed circuit board, 1.7mm thick, collector plating 100mm

2

or larger.

Parameter

Symbol

VCBO

VCEO

VEBO

IC

PC

Tj

Tstg

Limits

100

6

2

1

10

150

−55 to +150

Unit

V

A(DC)

3 A(Pulse)

W

W(Tc=25°C)

2SD2195

2SD1980

2SD1867

°C

∗1

∗2

∗3

0.5

zExternal dimensions (Unit : mm)

2SD2195

(3) Emitter

(2) Collector

(1) Base

EIAJ : SC-62

2SD1980

(3) Emitter

(2) Collector

(1) Base

ROHM : CPT3

EIAJ : SC-63

ROHM : MPT3

2SD1867

(2) Collector

(1) Emitter

ROHM : ATV

Taping specifications

(3) Base

0.451.05

0.5

(

1

)

0.65Max.

2.54

(

2

)

2.54

(

3

)

6.8

1.0

14.5

0.9

4.4

2.5

1.5

0.4

1.6

0.5

3.0

0.40.4

1.51.5

(3)(2)

(1)

4.5

0.5

4.0

2.5

1.0

6.5

2.3

(2)

(3)

0.65

0.9

(1)

0.75

2.3

0.9

5.1

1.5

5.5

2.3

0.5

1.0

0.5

9.5

2.5

0.8Min.

1.5

2SD2195

/

2SD1980

/

2SD1867

Transistors

Rev.B 2/3

zPackaging specifications and h

FE

Package

Code

Basic ordering unit (pieces)

Marking

Denotes h

FE

∗

Type

h

FE

2SD2195 2SD1980 2SD1867

MPT3 CPT3 ATV

1k to 10k 1k to 10k 1k to 10k

DP

T100

1000 2500 2500

TL TV2

−−

zElectrical characteristics (Ta=25°C)

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Collector cutoff current

Emitter cutoff current

Output capacitance

Collector-emitter saturation voltag

DC current

transfer ratio

Measured using pulse current.

∗

Parameter Symbol Min. Typ. Max. Unit Conditions

BV

CBO

BV

CBO

BV

EBO

I

CBO

I

EBO

Cob

100

−

25

80

−

10

3

−

V

−−

V

µA

mA

pF

I

C

=

50µA

I

C

=

5mA

I

E

=

5mA

V

CB

=

100V

V

EB

=

5V

V

CE(sat)

V

BE(sat)

−−

1.5 V

2.0 V

I

C

=

1A

,

I

B

=

1mA

I

C

/I

B

=

1A/1mA

h

FE

1000

−

10000

− V

CE

=

2V

,

I

C

=

1A

V

CE

=

5V

,

I

E

=

−0.1A

,

f

=

30MHz

V

CB

=

10V

,

I

E

=

0A

,

f

=

1MHz

∗

Emitter-base breakdown voltage

Base-Emitter saturation voltage

Transition frequency

6

f

T

MHz

zElectrical characteristic curves

2.0

COLLECTOR CURRENT : I

C

(A)

5

23410

1.2

1.6

0.4

0.8

0

COLLECTOR TO EMITTER VOLTAGE : V

CE

(V

)

Fig.1 Grounded emitter output

characteristics

Ta=25°C

1mA

I

B

=0.3mA

0.4mA

0.5mA

0.6mA

0.7mA

0.8mA

0.9mA

COLLECTOR CURRENT : I

C

(A)

2.6 3.01.41.0 1.8 2.20.60.2

0.01

0.02

0.05

0.1

0.2

0.5

10

1

2

5

BASE TO EMITTER VOLTAGE : V

BE

(V)

Fig.2 Grounded emitter propagatio

n

characteristics

V

CE

=2V

Ta=100

°

C

25°

C

−25

°

C

DC CURRENT GAIN : h

FE

101

0.10.010.001

50

100

200

500

1000

2000

5000

10000

20

10

COLLECTOR CURRENT : I

C

(A)

Fig.3 DC current gain vs. collector curre

nt

Ta=25°C

V

CE

=4V

2V

V

CE

=2V

Ta=100

°

C

25°C

−25

°C

DC CURRENT GAIN : h

FE

0.001 0.002 0.005 0.01 0.02 0.05

0.1 0.2 0.5 1 2 5 10

10

20

50

100

200

500

1000

2000

5000

10000

COLLECTOR CURRENT : I

C

(A)

Fig.4 DC current gain vs. collector curre

nt

100

20

10

1

0.1

0.2

0.5

2

5

50

0.0.1

0.0.2 0.0.5 0.1 0.2 0.5 1 2 5 10

COLLECTOR CURRENT : IC (A)

Fig.5 Collector-emitter saturation voltag

e

vs.collector current

Ta=25

°C

I

C

/I

B

=1000

500

COLLECTOR SATURATION VOLTAGE : V

CE(sat)

(V

)

100

20

10

1

0.1

0.2

0.5

2

5

50

0.0.1

0.0.2 0.0.5 0.1 0.2 0.5 1 2 5 10

COLLECTOR CURRENT : IC (A)

Fig.6 Collector-emitter saturation voltag

e

vs.collector current

I

C

/I

B

=1000

Ta=

−

25

°C

100

°C

25

°C

COLLECTOR SATURATION VOLTAGE : V

CE(sat)

(V

)

2SD2195

/

2SD1980

/

2SD1867

Transistors

Rev.B 3/3

1000

200

100

10

1

2

5

20

50

500

0.1

0.2 0.5 1 2 5 10 20 50 10

0

COLLECTOR TO BASE VOLTAGE : V

CB

(V)

Fig.7 Collector output capacitanc

e

vs. collector-base voltage

COLLECTOR OUTPUT CAPACITANCE : Cob (pF)

Ta=25

°C

f=1MHz

I

E

=0A

10

2

5

1

120.1 0.2 0.5 5 10 20 50 100 200 500100

0

COLLECTOR TO EMITTER VOLTTER

VOLTAGE :V

CE

(V)

Fig.8 Safe operating area (2SD2195

)

COLLECTOR CURRENT : I

C

(A)

Ta=25°C

∗ Single Nonrepetitive Pulse

I

C

Max

Pulse

∗

Pw=10ms

∗

Pw=1ms

∗

Pw=100ms

∗

DC

When mounted on a 14 8 0.8mm

glass epoxy board.

+

10m

20m

50m

100m

200m

500m

1m

2m

5m

3

2

1

0.1

0.05

0.2

0.5

12 51020 5010

0

V

CE

(V)

Fig.9 Safe operating area(2SD186

7)

I

C

(A)

Ta=25°C

∗ Single Nonrepetitive

Pulse

I

C

Max

Pulse

Pw=10ms

Pw=100ms

DC

I

C

Max

2SD1867TV2

2SD1867TV2

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