©2002 Fairchild Semiconductor Corporation Rev. A3, August 2002
FJX3009R
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25°C unless otherwise noted
Electrical Characteristics
T
a
=25°C unless otherwise noted
Symbol Parameter Value Units
V
CBO
Collector-Base Voltage 40 V
V
CEO
Collector-Emitter Voltage 40 V
V
EBO
Emitter-Base Voltage 5 V
I
C
Collector Current 100 mA
P
C
Collector Power Dissipation 200 mW
T
J
Junction Temperature 150 °C
T
STG
Storage Temperature -55 ~ 150 °C
Symbol Parameter Test Condition Min. Typ. Max. Units
BV
CBO
Collector-Base Breakdown Voltage I
C
=100µA, I
E
=0 40 V
BV
CEO
Collector-Emitter Breakdown Voltage I
E
=1mA, I
B
=0 40 V
I
CBO
Collector Cut-off Current V
CB
=30V, I
E
=0 0.1 µA
h
FE
DC Current Gain V
CE
=5V, I
C
=1mA 100 600
V
CE
(sat) Collector-Emitter Saturation Voltage I
C
=10mA, I
B
=1mA 0.3 V
C
ob
Output Capacitance V
CB
=10V, I
E
=0
f=1MHz
3.70 pF
f
T
Current Gain Bandwidth Product V
CE
=10V, I
C
=5mA 250 MHz
R Input Resistor 3.2 4.7 6.2 KΩ
FJX3009R
Switching Application (Bias Resistor Built In)
• Switching circuit, Inverter, Interface circuit, Driver Circuit
• Built in bias Resistor (R=4.7KΩ)
• Complement to FJX4009R
Equivalent Circuit
B
E
C
R
S09
Marking
1. Base 2. Emitter 3. Collector
1
2
SOT-323
3
