CD214A-B160R

Features
n RoHS compliant*
n Low profile
n Low power loss, high efficiency
n UL 94V-0 classification
Applications
n Switch Mode Power Supplies
n Portable equipment batteries
n High frequency rectification
n DC/DC Converters
n Telecommunications
CD214A-B1xR Series Schottky Barrier Rectifier Chip Diode
*RoHS Directive 2015/863, Mar 31, 2015 and Annex.
Specifications are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.
Users should verify actual device performance in their specific applications.
General Information
Portable communications, computing and video equipment manufacturers are challenging the
semiconductor industry to develop increasingly smaller electronic components.
Bourns offers Schottky Rectier Diodes for rectication applications, in a compact chip
package compatible with DO-214AC (SMA) size format. The Schottky Rectier Diodes offer a
forward current of 1 A with a choice of repetitive peak reverse voltage of 20 V up to 100 V.
Absolute Maximum Ratings (@ T
A
= 25 °C Unless Otherwise Noted)
Parameter Symbol
CD214A-
Unit
B120R B120LR B140R B140LR B160R B1100R
Maximum Repetitive Peak Reverse Voltage V
RRM
20 20 40 40 60 100 V
Maximum Average Forward Current I
F(AV)
1 A
Maximum Peak Forward Surge Current
(8.3 ms Single Half Sine-Wave)
I
FSM
30 A
Operating Junction Temperature Range T
OPR
-55 to +125 -55 to +150 °C
Storage Temperature Range T
STG
-55 to +150 °C
*RoHS COMPLIANT
LEAD FREE
*RoHS COMPLIANT
VERSIONS
AVAILABLE
LEAD FREE
VERSIONS ARE
RoHS COMPLIANT*
Electrical Characteristics (@ T
A
= 25 °C Unless Otherwise Noted)
Parameter Symbol Condition or Model Min. Typ. Max. Unit
Maximum Instantaneous Forward Voltage
@1 A
(NOTE 1)
V
F
CD214A-B120LR
CD214A-B140LR
0.37 0.38
V
CD214A-B120R
CD214A-B140R
0.47 0.50
CD214A-B160R 0.60 0.70
CD214A-B1100R 0.76 0.85
DC Reverse Current I
R
V
R
=
V
RRM
CD214A-B120LR
CD214A-B140LR
0.35 1.0 mA
CD214A-B120R
CD214A-B140R
CD214A-B160R
CD214A-B1100R
0.02 0.2 mA
Typical Junction Capacitance C
J
V
R
= 4 V, f = 1.0 MHz 110 pF
Typical Thermal Resistance
(NOTE 2)
Junction to
Ambient
R
θJA
CD214A-B120R
CD214A-B140R
CD214A-B160R
CD214A-B1100R
88
°C/W
CD214A-B120LR
CD214A-B140LR
55
Junction to
Lead
R
θJL
CD214A-B120R
CD214A-B140R
CD214A-B160R
CD214A-B1100R
28
CD214A-B120LR
CD214A-B140LR
17
NOTES: (1) Pulse width 300 microsecond, 1 % duty cycle. (2) Mounted on PCB with 5.0 x 5.0 mm (0.2 x 0.2 inch) copper pad areas.
3312 - 2 mm SMD Trimming Potentiometer
Specifications are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in different
applications and actual device performance may vary over time.
Users should verify actual device performance in their specific applications.
CD214A-B1xR Series Schottky Barrier Rectifier Chip Diode
Performance Graphs
Forward Current Derating Curve
Maximum Peak Forward Surge Current
Typical Instantaneous Forward Characteristics Typical Reverse Characteristics
Typical Junction Capacitance
1.0
0.5
0
02550
75 100 125 150
Average Forward Rectified Current (Amps)
Lead Temperature (°C)
Resistive or
Inductive Load
PCB Mounted on
5.0 x 5.0 mm
(0.2 x 0.2 inch)
Copper Pad Areas
30
5
10
15
20
25
0
010 100
Peak Forward Surge Current (Amps)
Number of Cycles @ 60 Hz
8.3 ms
Single Half
Sine-Wave
(JEDEC Method)
0.01
0.10
1
10
0.001
0 0.1
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Instantaneous Forward Current (A)
Instantaneous Forward Voltage (Volts)
0.01
0.1
1
10
100
0.001
020
40 60 80 100
Instantaneous Reverse Current (mA)
Percent of Rated Peak Reverse Voltage (%)
T
J
= 100 °C
400
100
10
0.1 1.0
10 100
Junction Capacitance (pF)
Reverse Voltage (Volts)
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mVP-P
CD214A-B120R, -B140R,
CD214A-B120LR, -B140LR
CD214A-B160R, -B1100R
CD214A-B120LR, -B140LR
CD214A-B120R, -B140R
CD214A-B160R, -B1100R
CD214A-B120LR, -B140LR
CD214A-B120R, -B140R
CD214A-B160R
CD214A-B1100R
CD214A-B120LR, -B140LR
CD214A-B120R, -B140R,
-B160R, -B1100R
T
J
= 25 °C
T
J
= 25 °C
T
J
= 100 °C
CD214A-B1xL SERIES
1.0
0.5
0
02550 75 100 125 150
Average Forward Rectified Current (Amps)
Lead Temperature (°C)
Resistive or
Inductive Load
PCB Mounted on
5.0 x 5.0 mm
(0.2 x 0.2 inch)
Copper Pad Areas
30
5
10
15
20
25
0
010 100
Peak Forward Surge Current (Amps)
Number of Cycles @ 60 Hz
8.3 ms
Single Half
Sine-Wave
(JEDEC Method)
0.01
0.10
1
10
0.001
0 0.1
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Instantaneous Forward Current (A)
Instantaneous Forward Voltage (Volts)
0.01
0.1
1
10
100
0.001
020
40 60 80 100
Instantaneous Reverse Current (mA)
Percent of Rated Peak Reverse Voltage (%)
T
J
= 100 °C
400
100
10
0.1 1.0
10 100
Junction Capacitance (pF)
Reverse Voltage (Volts)
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mVP-P
CD214A-B120R, -B140R,
CD214A-B120LR, -B140LR
CD214A-B160R, -B1100R
CD214A-B120LR, -B140LR
CD214A-B120R, -B140R
CD214A-B160R, -B1100R
CD214A-B120LR, -B140LR
CD214A-B120R, -B140R
CD214A-B160R
CD214A-B1100R
CD214A-B120LR, -B140LR
CD214A-B120R, -B140R,
-B160R, -B1100R
T
J
= 25 °C
T
J
= 25 °C
T
J
= 100 °C
CD214A-B1xL SERIES
1.0
0.5
0
02550 75 100 125 150
Average Forward Rectified Current (Amps)
Lead Temperature (°C)
Resistive or
Inductive Load
PCB Mounted on
5.0 x 5.0 mm
(0.2 x 0.2 inch)
Copper Pad Areas
30
5
10
15
20
25
0
010 100
Peak Forward Surge Current (Amps)
Number of Cycles @ 60 Hz
8.3 ms
Single Half
Sine-Wave
(JEDEC Method)
0.01
0.10
1
10
0.001
0 0.1
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Instantaneous Forward Current (A)
Instantaneous Forward Voltage (Volts)
0.01
0.1
1
10
100
0.001
020
40 60 80 100
Instantaneous Reverse Current (mA)
Percent of Rated Peak Reverse Voltage (%)
T
J
= 100 °C
400
100
10
0.1 1.0
10 100
Junction Capacitance (pF)
Reverse Voltage (Volts)
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mVP-P
CD214A-B120R, -B140R,
CD214A-B120LR, -B140LR
CD214A-B160R, -B1100R
CD214A-B120LR, -B140LR
CD214A-B120R, -B140R
CD214A-B160R, -B1100R
CD214A-B120LR, -B140LR
CD214A-B120R, -B140R
CD214A-B160R
CD214A-B1100R
CD214A-B120LR, -B140LR
CD214A-B120R, -B140R,
-B160R, -B1100R
T
J
= 25 °C
T
J
= 25 °C
T
J
= 100 °C
CD214A-B1xL SERIES
3312 - 2 mm SMD Trimming Potentiometer
F
I
H
B
C
DIA.
G
A
D D
E
Specifications are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.
Users should verify actual device performance in their specific applications.
CD214A-B1xR Series Schottky Barrier Rectifier Chip Diode
Product Dimensions Recommended Pad Layout
DIMENSIONS:
MM
(INCHES)
Dimension CD214A-B1 Series
A
4.5 ± 0.10
(0.177 ± 0.004)
B
2.20 ± 0.10
(0.087 ± 0.004)
C (Dia.)
0.50
(0.020)
D
0.95 ± 0.20
(0.037 ± 0.008)
E
0.96 +0.20/-0.10
(0.038 +0.008/-0.004)
DIMENSIONS:
MM
(INCHES)
Typical Part Marking
Dimension CD214A-B1 Series
F
2.60
(0.102)
MAX.
G
1.47
(0.058)
MIN.
H
1.27
(0.050)
MIN.
I
5.14
(0.202)
REF.
DEVICE CODE:
102 = CD214A-B120R
102L = CD214A-B120LR
104 = CD214A-B140R
104L = CD214A-B140LR
106 = CD214A-B160R
110 = CD214A-B1100R
102
YWW
DATE CODE:
Y = LAST
DIGIT OF
YEAR
WW = WEEK
NUMBER
How to Order
CD 214A - B 1 20 L R
Common Code
CD = Chip Diode
Package
214A = SMA/DO-214AC Compatible
Model
B = Schottky Barrier Series
Maximum Average Forward Rectied Current
1 = 1 A
Maximum Repetitive Peak Reverse Voltage
20 = 20 V
40 = 40 V
60 = 60 V
100 = 100 V
Forward Voltage Sufx
L = Low Forward Voltage
Environmental Specications
Moisture Sensitivity Level ................................................................1
ESD Classication (HBM)............................................................. 3B

CD214A-B160R

Mfr. #:
Manufacturer:
Bourns
Description:
Schottky Diodes & Rectifiers 60V 1A
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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