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BTA308X-800ETQ

P1-P3P4-P6P7-P9P10-P12P13-P13
WeEn Semiconductors
BTA308X-800ET
3Q Hi-Com Triac
BTA308X-800ET All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2017. All rights reserved
Product data sheet 14 July 2017 4 / 13
0 2
4 6 8 10
10
12
I
T(RMS)
(A)
P
tot
(W)
conduction
(degrees)
form
factor
α
30
60
90
120
180
2.816
1.967
1.570
1.329
1.110
α
aaf281-003
150
141
132
114
105
96
T
h(max)
(°C)
120
90
60
30
α = 180
°
°
°
°
°
123
α = conduction angle
a = form factor = I
T(RMS)
/ I
T(AV)
Fig. 3. Total power dissipation as a function of RMS on-state current; maximum values
1
10 10
2
10
3
0
20
40
60
80
number of cycles (n)
I
TSM
(A)
I
T
T
j(init)
= 25 °C max
I
TSM
T
t
aaf029-004
f = 50 Hz
Fig. 4. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
WeEn Semiconductors
BTA308X-800ET
3Q Hi-Com Triac
BTA308X-800ET All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2017. All rights reserved
Product data sheet 14 July 2017 5 / 13
10
-5
10
-4
10
-3
10
-2
10
-1
10
10
2
10
3
10
4
t
p
(s)
I
TSM
(A)
I
T
T
j(init)
= 25 °C max
I
TSM
T
t
aaf029-005
(1)
t
p
≤ 20 ms
(1) dI
T
/dt limit
Fig. 5. Non-repetitive peak on-state current as a function of pulse width; maximum values
WeEn Semiconductors
BTA308X-800ET
3Q Hi-Com Triac
BTA308X-800ET All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2017. All rights reserved
Product data sheet 14 July 2017 6 / 13
8. Thermal characteristics
Table 5. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-h)
thermal resistance
from junction to
heatsink
with heatsink compound; Fig. 6 - - 4.5 K/W
R
th(j-a)
thermal resistance
from junction to
ambient free air
in free air - 55 - K/W
10
-5
10
-4
10
-3
10
-2
10
-1
1
10
10
-3
10
-2
10
-1
1
10
t
p
(s)
Z
th (j-h)
(K/W)
P
t
p
t
aaf281-006
Fig. 6. Transient thermal impedance from junction to heatsink as a function of pulse duration
9. Isolation characteristics
Table 6. Isolation characteristics
Symbol Parameter Conditions Min Typ Max Unit
V
isol(RMS)
RMS isolation voltage from all terminals to external heatsink;
sinusoidal waveform; clean and dust
free; 50 Hz ≤ f ≤ 60 Hz; RH ≤ 65 %;
T
h
= 25 °C
- - 2500 V
C
isol
isolation capacitance from main terminal 2 to external
heatsink; f = 1 MHz; T
h
= 25 °C
- 10 - pF
P1-P3P4-P6P7-P9P10-P12P13-P13

BTA308X-800ETQ

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Manufacturer:
WeEn Semiconductors
Description:
Triacs BTA308X-800ETQ/TO-220F/STANDARD MARKING * HORIZONTAL, RAIL PACK,STANDARD MARKING * HORIZONTAL, RAIL PACK
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