DMP3099L-7

DMP3099L
Document number: DS36081 Rev. 3 - 2
1 of 6
www.diodes.com
May 2013
© Diodes Incorporated
DMP3099L
NEW PRODUCT
P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V
(BR)DSS
R
DS(ON)
max
I
D
max
T
A
= +25°C
-30V
65m @ V
GS
= -10V
-3.8A
99m @ V
GS
= -4.5V
-3.0A
Description
This MOSFET has been designed to minimize the on-state resistance
(R
DS(ON)
) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Applications
Backlighting
Power Management Functions
DC-DC Converters
Features and Benefits
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SOT23
Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Weight: 0.008 grams (approximate)
Ordering Information (Note 4)
Part Number Compliance Case Packaging
DMP3099L-7 Standard SOT23 3000/Tape & Reel
DMP3099L-13 Standard SOT23 10000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http”//www.diodes.com/products/packages.html.
Marking Information
Date Code Key
Year 2008 2009 2010 2011 2012 2013 2014 2015
Code V W X Y Z A B C
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
SOT23
Top View
D
G
S
Top View
Pin Configuration
D99= Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: V = 2008)
M = Month (ex: 9 = September)
Equivalent Circuit
D99
YM
e3
DMP3099L
Document number: DS36081 Rev. 3 - 2
2 of 6
www.diodes.com
May 2013
© Diodes Incorporated
DMP3099L
NEW PRODUCT
Maximum Ratings (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Drain-Source Voltage
V
DSS
-30 V
Gate-Source Voltage
V
GSS
±20 V
Drain Current (Note 5) V
GS
= -10V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
-3.8
-2.9
A
Pulsed Drain Current (Note 6)
I
DM
-11 A
Thermal Characteristics
Characteristic Symbol Value Units
Total Power Dissipation (Note 5)
P
D
1.08 W
Thermal Resistance, Junction to Ambient @T
A
= +25°C (Note 5) R
JA
115 °C/W
Operating and Storage Temperature Range
T
J,
T
STG
-55 to +150 °C
Electrical Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage BV
DSS
-30 — V V
GS
= 0V, I
D
= -250µA
Zero Gate Voltage Drain Current I
DSS
-800 nA V
DS
= -30V, V
GS
= 0V
Gate-Source Leakage I
GSS
±100 nA V
GS
= ±20V, V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage V
GS
(
th
)
-1.0 — -2.1 V V
DS
= V
GS
, I
D
= -250µA
Static Drain-Source On-Resistance R
DS(ON)
65
99
m
V
GS
= -10V, I
D
= -3.8A
V
GS
= -4.5V, I
D
= -3.0A
Forward Transfer Admittance |Y
fs
| — 3.6 — S V
DS
= -5V, I
D
= -2.7A
Diode Forward Voltage (Note 6) V
SD
— -1.26 V V
GS
= 0V, I
S
= -2.7A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance C
iss
563 — pF
V
DS
= -25V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance C
oss
48 — pF
Reverse Transfer Capacitance C
rss
41 — pF
Gate Resistance R
G
10.3 — V
GS
= 0V V
DS
= 0V, f = 1MHz
SWITCHING CHARACTERISTICS (Note 8)
Total Gate Charge Q
g
5.2 —
nC
V
DS
= -15V, V
GS
= -4.5V,
I
D
= -3.8A
11 —
V
DS
= -15V, V
GS
= -10V,
I
D
= -3.8A
Gate-Source Charge Q
g
s
1.7 —
Gate-Drain Charge Q
g
d
1.9 —
Turn-On Delay Time t
d
(
on
)
4.8 —
ns
V
DS
= -15V, V
GS
= -10V,
I
D
= -1A, R
G
= 6.0
Rise Time t
r
5.0 —
Turn-Off Delay Time t
d
(
off
)
31 —
Fall Time t
f
15 —
Notes: 5. Device mounted on FR-4 PCB on 2 oz., 0.5 in.
2
copper pads and t 5 sec.
6. Pulse width 10µS, Duty Cycle 1%.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
DMP3099L
Document number: DS36081 Rev. 3 - 2
3 of 6
www.diodes.com
May 2013
© Diodes Incorporated
DMP3099L
NEW PRODUCT
I, D
R
AIN
C
U
R
R
EN
T
(A)
D
0.0
4.0
8.0
12.0
16.0
20.0
012345
V , DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristics
DS
V = -2.5V
GS
V = -3.0V
GS
V = -4.0V
GS
V= -4.5V
GS
V = -10V
GS
V = -2.0V
GS
-V , GATE-SOURCE VOLTAGE (V)
GS
Figure 2 Typical Transfer Characteristics
-I , D
R
AIN
C
U
R
R
EN
T
(A)
D
0
4
8
12
16
20
0123456
V = -5.0V
DS
T = 150°C
A
T = 125°C
A
T = 85°C
A
T = 25°C
A
T = -55°C
A
I , DRAIN-SOURCE CURRENT (A)
D
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
R
, D
R
AIN-S
O
U
R
CE
O
N-
R
ESISTANCE ( )
DS(ON)
048121620
0.01
0.1
1
V = -4.5V
GS
V= -10V
GS
-I , DRAIN CURRENT (A)
D
Figure 4 Typical On-Resistance vs.
Drain Current and Temperature
R
, D
R
AIN-S
O
U
R
CE
O
N-
R
ESISTANCE ( )
DS(ON)
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.4
048121620
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
V= -4.5V
GS
T , AMBIENT TEMPERATURE ( C)
Figure 5 On-Resistance Variation with Temperature
A
R
, D
R
AIN-S
O
U
R
C
E
ON-RESISTANCE (NORMALIZED)
DS(ON)
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
-50-25 0 25 50 75100125150
V = -4.5V
I = -4.2A
GS
D
V = -10V
I = -5.3A
GS
D
T , JUNCTION TEMPERATURE ( C)
Figure 6 On-Resistance Variation with Temperature
J
R
, D
R
AIN-S
O
U
R
C
E
O
N-
R
ESIS
T
AN
C
E ( )
DS(ON)
0
0.02
0.04
0.06
0.08
0.1
0.12
0.14
0.16
-50 -25 0 25 50 75 100 125 150
V = 4.5V
I= 4.2A
GS
D
V=V
I= 5.3A
GS
D
10

DMP3099L-7

Mfr. #:
Manufacturer:
Diodes Incorporated
Description:
MOSFET P-Ch ENH FET -30V 65mOhm -20V -3.8A
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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