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IXYJ20N120C3D1
P1-P3
P4-P6
P7-P7
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYJ20N120C3D1
Fi
g. 7. Trans
condu
ctanc
e
0
2
4
6
8
10
12
14
16
0
5
10
15
20
25
30
35
40
45
50
I
C
- A
m
p
e
re
s
g
f s
-
Siem
ens
T
J
= - 40
ºC
25º
C
150º
C
Fi
g. 10. Rev
erse-B
i
as Safe Op
erat
i
ng Ar
ea
0
10
20
30
40
200
400
600
800
1000
1200
V
CE
- Vo
lts
I
C
-
Amper
es
T
J
= 15
0ºC
R
G
= 10
dv
/ dt
< 10V / n
s
Fi
g. 8. Gate C
har
ge
0
2
4
6
8
10
12
14
16
0
5
10
15
20
25
30
35
40
45
50
55
Q
G
- Nano
C
o
ul
o
m
b
s
V
GE
- V
o
lt
s
V
CE
= 600V
I
C
= 20
A
I
G
= 10
mA
Fi
g. 9. Capacit
ance
10
100
1,000
10,000
0
5
10
15
20
25
30
35
40
V
CE
- V
o
lts
Capacit
anc
e - Pi
co
Farad
s
f
= 1 MH
z
C
ies
C
oes
C
res
Fi
g. 11. M
axi
mum Transi
ent
Ther
mal
I
mpedance (I
GB
T)
0.
001
0.01
0.
1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pu
lse W
idt
h -
Sec
on
ds
Z
(th)J
C
- ºC
/ W
© 2013 IXYS CORPORATION, All Rights Reserved
IXYJ20N120C3D1
Fi
g. 12. I
nducti
v
e Sw
i
tchi
ng Ener
gy Loss v
s.
G
ate R
esi
st
ance
0
0.4
0.8
1.2
1.6
2
10
15
20
25
30
35
40
45
50
55
R
G
- Ohm
s
E
off
- MilliJ
o
u
le
s
0
4
8
12
16
20
E
on
- M
illiJ
o
u
le
s
E
off
E
on
- - - -
T
J
= 150º
C , V
GE
= 15
V
V
CE
= 600V
I
C
= 20A
I
C
= 40
A
Fi
g. 15
. I
nducti
v
e Turn-
off Sw
it
c
hi
ng Ti
m
es v
s.
Gat
e
Resi
stance
20
40
60
80
100
120
140
160
180
10
15
20
25
30
35
40
45
50
55
R
G
- Ohms
t
f i
- Nanoseconds
40
80
120
160
200
240
280
320
360
t
d(of
f)
-
Nanoseconds
t
f i
t
d(off)
- - - -
T
J
= 15
0ºC
, V
GE
= 15V
V
CE
= 6
0
0
V
I
C
= 20A
I
C
= 40
A
Fi
g. 13. Induct
i
v
e Sw
i
tchi
ng Energy
Loss v
s
.
Col
l
ec
tor C
urr
ent
0.2
0.4
0.6
0.8
1.0
1.2
1.4
20
22
24
26
28
30
32
34
36
38
40
I
C
- Am
p
e
res
E
off
- MilliJoules
0
2
4
6
8
10
12
E
on
- M
illiJ
o
u
le
s
E
off
E
on
- - - -
R
G
= 10
,
V
GE
= 15
V
V
CE
= 600V
T
J
= 150º
C
T
J
= 25
º
C
Fi
g. 14. In
ducti
v
e
Sw
i
tchi
ng Energy
Loss v
s
.
Juncti
on Temper
atur
e
0.
2
0.
4
0.
6
0.
8
1.
0
1.
2
1.
4
25
50
75
100
125
150
T
J
-
Degr
ees Cen
t
i
gra
de
E
off
- MilliJoules
0
2
4
6
8
10
12
E
on
- M
illiJ
o
u
le
s
E
off
E
on
- - - -
R
G
= 10
,
V
GE
= 15
V
V
CE
= 600V
I
C
= 20A
I
C
= 40
A
Fi
g. 16. Induct
i
v
e Turn-
off Sw
it
chi
ng Ti
mes v
s.
Coll
ec
to
r Cu
rren
t
20
40
60
80
100
120
140
20
2
2
24
26
28
30
32
34
36
38
40
I
C
-
Amper
es
t
f i
- Nanoseconds
70
80
90
100
110
120
130
t
d(of
f)
-
Nanoseconds
t
f i
t
d(off)
- - - -
R
G
= 10
, V
GE
= 15
V
V
CE
= 60
0
V
T
J
= 25
ºC
T
J
= 15
0
ºC
Fi
g. 17. In
ducti
v
e Turn-
off
Sw
i
tchi
ng Ti
m
es v
s
.
Juncti
on Temperature
20
40
60
80
100
120
140
160
25
50
75
100
125
150
T
J
-
Degr
ees Cent
igr
a
de
t
f i
-
Nanosecond
s
70
80
90
100
110
120
130
140
t
d
(o
ff)
-
Na
noseconds
t
f i
t
d(off)
- - - -
R
G
= 10
, V
GE
= 15
V
V
CE
= 600V
I
C
= 20
A
I
C
= 40
A
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYJ20N120C3D1
IXYS REF: IXY_20N120C3(4L) 9-06-13-C
Fi
g. 22
. Maxi
mum Transi
ent Thermal
I
mpeda
nce (Di
ode)
0.01
0.
1
1
10
0.
0001
0.
001
0.
01
0.
1
1
10
Pu
lse W
idt
h -
Seconds
Z
(th
)JC
- ºC
/ W
Fi
g. 21. Maxi
mum Peak Load Curr
ent v
s. Fr
equency
0
5
10
15
20
25
30
35
40
45
0.1
1
10
100
1000
f
max
- K
ilo
Hert
zs
I
C
- Am
p
e
re
s
T
J
= 15
0
ºC
T
C
= 75º
C
V
CE
= 600V
V
GE
= 15V
R
G
= 10
ȍ
D =
0.
5
Squ
ar
e Wav
e
Tri
a
ng
ul
a
r
W
a
ve
Fi
g. 19. Induct
i
v
e Turn
-on Sw
i
tchi
ng Ti
mes
v
s.
Coll
e
c
tor Cu
rren
t
0
40
80
120
160
200
20
22
24
26
28
30
32
34
36
38
40
I
C
- A
m
p
e
re
s
t
r i
- Nanoseconds
19
20
21
22
23
24
t
d(on)
-
Nanoseconds
t
r i
t
d(on)
- - - -
R
G
= 10
, V
GE
= 15
V
V
CE
= 60
0V
T
J
= 25º
C
T
J
= 150º
C
Fi
g. 20. Induct
i
v
e Turn-
on Sw
i
tchi
ng Ti
m
es v
s.
Juncti
on Temperatur
e
0
40
80
120
160
200
25
50
75
100
125
150
T
J
-
Degr
ees Cen
t
i
g
r
ade
t
r i
-
Nanosecond
s
17
19
21
23
25
27
t
d(on)
-
Nanoseconds
t
r i
t
d(on)
- - - -
R
G
= 10
, V
GE
= 15V
V
CE
= 600V
I
C
= 40
A
I
C
= 20A
Fi
g
. 18
. I
n
ductive
Turn-on Sw
itchi
ng Times v
s.
G
ate Re
si
stan
ce
0
40
80
120
160
200
240
280
10
15
20
25
30
35
40
45
50
55
R
G
- Ohm
s
t
r i
-
Nanosecond
s
15
20
25
30
35
40
45
50
t
d(on)
- N
a
n
o
s
e
c
o
n
d
s
t
r i
t
d(on)
- - - -
T
J
= 150º
C, V
GE
= 15V
V
CE
= 600V
I
C
= 20A
I
C
= 40
A
P1-P3
P4-P6
P7-P7
IXYJ20N120C3D1
Mfr. #:
Buy IXYJ20N120C3D1
Manufacturer:
Littelfuse
Description:
IGBT Transistors XPT 1200V IGBT GenX7 XPT IGBT
Lifecycle:
New from this manufacturer.
Delivery:
DHL
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Ups
TNT
EMS
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IXYJ20N120C3D1