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IXTA130N10T-TRL

P1-P3P4-P5
© 2008 IXYS CORPORATION, All rights reserved
Symbol Test Conditions Maximum Ratings
V
DSS
T
J
= 25°C to 175°C 100 V
V
DGR
T
J
= 25°C to 175°C, R
GS
= 1MΩ 100 V
V
GSM
Transient ± 30 V
I
D25
T
C
= 25°C 130 A
I
LRMS
Lead Current Limit, RMS 75 A
I
DM
T
C
= 25°C, pulse width limited by T
JM
350 A
I
A
T
C
= 25°C65A
E
AS
T
C
= 25°C 500 mJ
P
D
T
C
= 25°C 360 W
T
J
-55 ... +175 °C
T
JM
175 °C
T
stg
-55 ... +175 °C
T
L
1.6mm (0.062 in.) from case for 10s 300 °C
T
SOLD
Plastic body for 10 seconds 260 °C
M
d
Mounting torque (TO-220) 1.13 / 10 Nm/lb.in.
Weight TO-220 3.0 g
TO-263 2.5 g
Symbol Test Conditions Characteristic Values
(T
J
= 25°C unless otherwise specified) Min. Typ. Max.
BV
DSS
V
GS
= 0V, I
D
= 250μA 100 V
V
GS(th)
V
DS
= V
GS
, I
D
= 250μA 2.5 4.5 V
I
GSS
V
GS
= ± 20V, V
DS
= 0V ± 200 nA
I
DSS
V
DS
= V
DSS
5 μA
V
GS
= 0V T
J
= 150°C 250 μA
R
DS(on)
V
GS
= 10V, I
D
= 25A, Notes 1, 2 9.1 mΩ
TrenchMV
TM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
IXTA130N10T
IXTP130N10T
V
DSS
= 100V
I
D25
= 130A
R
DS(on)
≤≤
≤≤
≤
9.1m
ΩΩ
ΩΩ
Ω
DS99649B(07/08)
G = Gate D = Drain
S = Source TAB = Drain
Features
z
Ultra-low On Resistance
z
Unclamped Inductive Switching (UIS)
rated
z
Low package inductance
- easy to drive and to protect
z
175 °C Operating Temperature
Advantages
z
Easy to mount
z
Space savings
z
High power density
Applications
z
Automotive
- Motor Drives
- 42V Power Bus
- ABS Systems
z
DC/DC Converters and Off-line UPS
z
Primary Switch for 24V and 48V
Systems
z
Distributed Power Architechtures
and VRMs
z
Electronic Valve Train Systems
z
High Current Switching
Applications
z
High Voltage Synchronous Recifier
TO-263 (IXTA)
TO-220 (IXTP)
G
S
G
D
S
(TAB)
(TAB)
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTA130N10T
IXTP130N10T
Symbol Test Conditions Characteristic Values
(T
J
= 25°C unless otherwise specified) Min. Typ. Max.
g
fs
V
DS
= 10V, I
D
= 60A, Note 1 55 93 S
C
iss
5080 pF
C
oss
V
GS
= 0V, V
DS
= 25V, f = 1MHz 635 pF
C
rss
95 pF
t
d(on)
Resistive Switching Times 30 ns
t
r
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 25A 47 ns
t
d(off)
R
G
= 5Ω (External) 44 ns
t
f
28 ns
Q
g(on)
104 nC
Q
gs
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 25A 30 nC
Q
gd
29 nC
R
thJC
0.42 °C/W
R
thCH
TO-220 0.50 °C/W
Source-Drain Diode
Symbol Test Conditions Characteristic Values
T
J
= 25°C unless otherwise specified) Min. Typ. Max.
I
S
V
GS
= 0V 130 A
I
SM
Pulse width limited by T
JM
350 A
V
SD
I
F
= 25A, V
GS
= 0V, Note 1 1.0 V
t
rr
67 ns
I
RM
4.7 A
Q
rr
160 nC
Notes: 1. Pulse test, t ≤ 300 μs; duty cycle, d ≤ 2%.
2. On through-hole packages, R
DS(on)
Kelvin test contact
location must be 5 mm or less from the package body.
TO-263 (IXTA) Outline
Pins: 1 - Gate 2 - Drain
3 - Source 4, TAB - Drain
Pins: 1 - Gate 2 - Drain
3 - Source 4, TAB - Drain
TO-220 (IXTP) Outline
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.06 4.83 .160 .190
A1 2.03 2.79 .080 .110
b 0.51 0.99 .020 .039
b2 1.14 1.40 .045 .055
c 0.46 0.74 .018 .029
c2 1.14 1.40 .045 .055
D 8.64 9.65 .340 .380
D1 7.11 8.13 .280 .320
E 9.65 10.29 .380 .405
E1 6.86 8.13 .270 .320
e 2.54 BSC .100 BSC
L 14.61 15.88 .575 .625
L1 2.29 2.79 .090 .110
L2 1.02 1.40 .040 .055
L3 1.27 1.78 .050 .070
L4 0 0.38 0 .015
R 0.46 0.74 .018 .029
I
F
= 0.5 • I
S
, -di/dt = 100A/μs
V
R
= 0.5 • V
DSS
, V
GS
= 0V
© 2008 IXYS CORPORATION, All rights reserved
IXTA130N10T
IXTP130N10T
Fig. 1. Output Characteristics
@ 25ºC
0
10
20
30
40
50
60
70
80
90
100
110
120
130
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
8V
7V
6V
Fig. 2. Extended Output Characteristics
@ 25ºC
0
40
80
120
160
200
240
280
012345678910
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
9V
8V
6V
7V
Fig. 3. Output Characteristics
@ 150ºC
0
10
20
30
40
50
60
70
80
90
100
110
120
130
0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
9V
8V
5V
6V
7V
Fig. 4. R
DS(on)
Normalized to I
D
= 65A Value
vs. Junction Temperature
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
2.8
-50 -25 0 25 50 75 100 125 150 175
T
J
- Degrees Centigrade
R
DS(on)
- Normalized
V
GS
= 10V
I
D
= 130A
I
D
= 65A
Fig. 5. R
DS(on)
Normalized to I
D
= 65A Value
vs. Drain Current
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
2.8
3.0
0 40 80 120 160 200 240 280
I
D
- Amperes
R
DS(on)
- Normalized
V
GS
= 10V
15V
- - - -
T
J
= 175ºC
T
J
= 25ºC
Fig. 6. Drain Current vs. Case Temperature
0
20
40
60
80
100
120
140
-50 -25 0 25 50 75 100 125 150 175
T
C
- Degrees Centigrade
I
D
- Amperes
External Lead Current Limit for TO-263 (7-Lead)
External Lead Current Limit for TO-3P, TO-220, & TO-263
P1-P3P4-P5

IXTA130N10T-TRL

Mfr. #:
Buy IXTA130N10T-TRL
Manufacturer:
Littelfuse
Description:
MOSFET IXTA130N10T TRL
Lifecycle:
New from this manufacturer.
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