© 2008 IXYS CORPORATION, All rights reserved
IXTA130N10T
IXTP130N10T
IXYS REF: T_130N10T (4V) 7-29-08-A
Fig. 14. Resistive Turn-on
Rise Time vs. Drain Current
22
26
30
34
38
42
46
50
54
58
62
25 30 35 40 45 50
I
D
- Amperes
t
r
- Nanoseconds
T
J
= 125ºC
T
J
= 25ºC
R
G
= 5
Ω
V
GS
= 10V
V
DS
= 50V
Fig. 15. Resistive Turn-on
Switching Times vs. Gate Resistance
20
30
40
50
60
70
80
90
100
110
120
130
4 6 8 10 12 14 16 18 20
R
G
- Ohms
t
r
- Nanoseconds
20
23
26
29
32
35
38
41
44
47
50
53
t
d(on)
- Nanoseconds
t
r
t
d(on)
- - - -
T
J
= 125ºC, V
GS
= 10V
V
DS
= 50V
I
D
= 50A
I
D
= 25A
Fig. 16. Resistive Turn-off
Switching Times vs. Junction Temperature
26
28
30
32
34
36
38
40
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
f
- Nanoseconds
40
44
48
52
56
60
64
68
t
d(off)
- Nanoseconds
I
D
= 25A
I
D
= 50A
t
f
t
d(off)
- - - -
R
G
= 5
Ω
, V
GS
= 10V
V
DS
= 50V
Fig. 17. Resistive Turn-off
Switching Times vs. Drain Current
24
26
28
30
32
34
36
38
40
25 30 35 40 45 50
I
D
- Amperes
t
f
- Nanoseconds
38
42
46
50
54
58
62
66
70
t
d(off)
- Nanoseconds
t
f
t
d(off)
- - - -
R
G
= 5
Ω
, V
GS
= 10V
V
DS
= 50V
T
J
= 125ºC
T
J
= 25ºC
Fig. 13. Resistive Turn-on
Rise Time vs. Junction Temperature
25
30
35
40
45
50
55
60
65
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
r
- Nanoseconds
R
G
= 5
Ω
V
GS
= 10V
V
DS
= 50V
I
D
= 50A
I
D
= 25A
Fig. 18. Resistive Turn-off
Switching Times vs. Gate Resistance
30
40
50
60
70
80
90
100
4 6 8 101214161820
R
G
- Ohms
t
f
- Nanoseconds
30
50
70
90
110
130
150
170
t
d(off)
- Nanoseconds
I
D
= 50A
I
D
= 25A
25A < I
D
< 50A
t
r
t
d(on)
- - - -
T
J
= 125ºC, V
GS
= 10V
V
DS
= 50V
