1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
N–Channel — Enhancement
MAXIMUM RATINGS
Rating Symbol Value Unit
Drain–Source Voltage V
DSS
240 Vdc
Drain–Gate Voltage V
DGR
60 Vdc
Gate–Source Voltage
– Continuous
– Non–repetitive (t
p
≤ 50 µs)
V
GS
V
GSM
± 20
± 40
Vdc
Vpk
Continuous Drain Current I
D
200 mAdc
Pulsed Drain Current I
DM
500 mAdc
Power Dissipation @ T
C
= 25°C
Derate above 25°C
P
D
350
2.8
mW
mW/°C
Operating and Storage Temperature T
J
, T
stg
— °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Ambient R
θJA
312.5 °C/W
Maximum Lead Temperature for Soldering
Purposes, 1/16″ from case for 10
seconds
T
L
300 °C
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
STATIC CHARACTERISTICS
Drain–Source Breakdown Voltage
(V
GS
= 0, I
D
= 100 µA)
V
(BR)DSS
240 — Vdc
Zero Gate Voltage Drain Current
(V
DS
= 120 Vdc, V
GS
= 0)
(V
DS
= 120 Vdc, V
GS
= 0, T
A
= 125°C)
I
DSS
—
—
10
500
µAdc
Gate– Body Leakage
(V
DS
= 0, V
GS
= ±15 V)
I
GSS
— ±100 nAdc
Gate Threshold Voltage
(V
DS
= V
GS
, I
D
= 1.0 mA)
V
GS(th)
0.8 2.0 Vdc
On–State Drain Current
(1)
(V
GS
= 10 V, V
DS
≥ 2.0 V
DS(on)
)
I
D(on)
1.0 — Adc
Drain–Source On Resistance
(1)
(V
GS
= 2.5 V, I
D
= 0.1 A)
(V
GS
= 10 V, I
D
= 0.5 A)
r
DS(on)
—
—
10
10
Ω
Forward Transconductance
(1)
(V
DS
= 10 V, I
D
= 0.5 A)
g
fs
300 — mS
1. Pulse Test; Pulse Width < 300 µs, Duty Cycle 2.0%.
TMOS is a registered trademark of Motorola, Inc.
Order this document
by VN2410L/D
SEMICONDUCTOR TECHNICAL DATA
CASE 29–04, STYLE 22
TO–92 (TO–226AA)
1
2
3
Motorola, Inc. 1997
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1 SOURCE
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