ZXT3M322TA

SUMMARY
V
CEO
= -40V; R
SAT
= 104m ;I
C
= -3A
DESCRIPTION
Packaged in the innovative 2mm x 2mm MLP (Micro Leaded Package) outline,
this new 4
th
generation low saturation transistor offers extremely low on state
losses making it ideal for use in DC-DC circuits and various driving and power
management functions.
Additionally users will also gain several other key benefits:
Performance capability equivalent to much larger packages
Improved circuit efficiency & power levels
PCB area and device placement savings
Lower package height (nom 0.9mm)
FEATURES
Low Equivalent On Resistance
Extremely Low Saturation Voltage (-220mV@ -1A)
h
FE
specified up to -3A
I
C
= -3A Continuous Collector Current
2mm x 2mm MLP
APPLICATIONS
DC - DC Converters (FET Driving)
Charging Circuits
Power switches
Motor control
ORDERING INFORMATION
DEVICE MARKING
S3
ZXT3M322
ISSUE 2 - JUNE 2002
1
MPPS™ Miniature Package Power Solutions
40V PNP LOW SATURATION SWITCHING TRANSISTOR
DEVICE REEL TAPE
WIDTH
QUANTITY
PER REEL
ZXT3M322TA 7
ⴕⴕ 8mm 3000
ZXT3M322TC 13
8mm 10000
2mm x 2mm Single MLP
underside view
PINOUT
2mm x 2mm MLP
(single die)
ZXT3M322
ISSUE 2 - JUNE 2002
2
PARAMETER SYMBOL VALUE UNIT
Junction to Ambient (a) R
θJA
83 °C/W
Junction to Ambient (b) R
θJA
51 °C/W
Junction to Ambient (d) R
θJA
125 °C/W
Junction to Ambient (e) R
θJA
42 °C/W
THERMAL RESISTANCE
NOTES
(a) For a single device surface mounted on 10sq cm1oz copper on FR4 PCB in still air conditions with all exposed pads attached.
(b) For a single device surface mounted on 10sq cm1oz copper on FR4 PCB in still air conditions measured at t5 secs with all exposed pads
attached.
(c) Repetitive rating - pulse width limited by max junction temperature. refer to Transient Thermal Impedance graph.
(d) For a single device surface mounted on 10sq cm1oz copper on FR4 PCB in still air conditions with minimal lead connections only.
(e) For a single device surface mounted on 65sq cm2oz copper on FR4 PCB in still air conditions with all exposed pads attached.
(f) The minimum copper dimensions required for mounting are no smaller than the exposed metal pads on the base of the device, as shown in the
package dimensions data. The thermal resistance for a device mounted on 1.5mm thick FR4 board using minimum copper of 1oz weight is
Rth=300°C/W giving a power rating of Ptot=420mW.
PARAMETER SYMBOL LIMIT UNIT
Collector-Base Voltage V
CBO
-50 V
Collector-Emitter Voltage V
CEO
-40 V
Emitter-Base Voltage V
EBO
-7.5 V
Peak Pulse Current I
CM
-4 A
Continuous Collector Current (a) I
C
-3 A
Base Current I
B
-1000 mA
Power Dissipation at TA=25°C (a)
Linear Derating Factor
P
D
1.5
12
W
mW/°C
Power Dissipation at TA=25°C (b)
Linear Derating Factor
P
D
2.45
19.6
W
mW/°C
Power Dissipation at TA=25°C (d)
Linear Derating Factor
P
D
1
8
W
mW/°C
Power Dissipation at TA=25°C (e)
Linear Derating Factor
P
D
3
24
W
mW/°C
Operating and Storage Temperature Range T
j
:T
stg
-55 to +150 °C
ABSOLUTE MAXIMUM RATINGS.
ZXT3M322
ISSUE 2 - JUNE 2002
3
0.1 1 10
0.01
0.1
1
10
0 25 50 75 100 125 150
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
100µ 1m 10m 100m 1 10 100 1k
0
20
40
60
80
0.1 1 10 100
0
25
50
75
100
125
150
175
200
225
0.1 1 10 100
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
100us
100ms
1s
V
CE( SAT)
Limited
1ms
Safe Operating Area
Single Pulse, T
amb
=25°C
DC
10ms
I
C
Collector Current (A)
V
CE
Collector-Emitter Voltage (V)
1oz Cu
Note: a
2oz Cu
Note: e
Derating Curve
T
amb
=25°C
Max Power Dissipation (W)
Temperature (°C)
D=0.2
D=0.5
D=0.1
Transient Thermal Impedance
Single Pulse
D=0.05
Thermal Resistance (°C/W)
Pulse Width (s)
Thermal Resistance v Board Area
1oz copper
2oz copper
Thermal Resistance (°C/W)
BoardCuArea(sqcm)
1oz copper
2oz copper
Power Dissipation v Board Area
T
amb
=25°C
T
jmax
=150°C
Continuous
P
D
Dissipation (W)
BoardCuArea(sqcm)
TYPICAL CHARACTERISTICS

ZXT3M322TA

Mfr. #:
Manufacturer:
Diodes Incorporated
Description:
Bipolar Transistors - BJT 40V PNP 2x2 MLP
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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