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IRL8113PBF

P1-P3P4-P6P7-P9P10-P12P13-P13
www.irf.com 1
07/20/04
IRL8113PbF
IRL8113SPbF
IRL8113LPbF
HEXFET
®
Power MOSFET
Notes through are on page 12
Applications
Benefits
l Low R
DS(on)
at 4.5V V
GS
l Low Gate Charge
l Fully Characterized Avalanche Voltage
and Current
l High Frequency Synchronous Buck
Converters for Computer Processor Power
l Lead-Free
PD - 95582
D
2
Pak
IRL8113S
TO-220AB
IRL8113
TO-262
IRL8113L
V
DSS
R
DS(on)
max
Qg (Typ
.)
30V
6.0m
23nC
Absolute Maximum Ratings
Parameter Units
V
DS
Drain-to-Source Voltage V
V
GS
Gate-to-Source Voltage
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
A
I
D
@ T
C
= 100°C
Continuous Drain Current, V
GS
@ 10V
I
DM
Pulsed Drain Current
P
D
@T
C
= 25°C
Maximum Power Dissipation W
P
D
@T
C
= 100°C
Maximum Power Dissipation
Linear Derating Factor W/°C
T
J
Operating Junction and °C
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
Parameter Typ. Max. Units
R
θ
JC
Junction-to-Case
––– 1.32 °C/W
R
θ
CS
Case-to-Sink, Flat Greased Surface
0.50 –––
R
θ
JA
Junction-to-Ambient
––– 62
R
θ
JA
Junction-to-Ambient (PCB Mount)
––– 40
10 lbf
in (1.1N m)
300 (1.6mm from case)
-55 to + 175
110
0.76
57
Max.
105
74
420
± 20
30
IRL8113/S/LPbF
2 www.irf.com
S
D
G
Static @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
DSS
Drain-to-Source Breakdown Voltage 30 ––– ––– V
∆Β
V
DSS
/
∆
T
J
Breakdown Voltage Temp. Coefficient ––– 0.020 ––– V/°C
R
DS(on)
Static Drain-to-Source On-Resistance ––– 4.8 6.0
m
Ω
––– 5.7 7.1
V
GS(th)
Gate Threshold Voltage 1.35 2.25 V
∆
V
GS(th)
/
∆
T
J
Gate Threshold Voltage Coefficient ––– -5.0 ––– mV/°C
I
DSS
Drain-to-Source Leakage Current ––– ––– 1.0 µA
––– ––– 150
I
GSS
Gate-to-Source Forward Leakage ––– ––– 100 nA
Gate-to-Source Reverse Leakage ––– ––– -100
gfs Forward Transconductance 86 ––– ––– S
Q
g
Total Gate Charge ––– 23 35
Q
gs1
Pre-Vth Gate-to-Source Charge ––– 6.0 –––
Q
gs2
Post-Vth Gate-to-Source Charge ––– 2.0 ––– nC
Q
gd
Gate-to-Drain Charge ––– 8.3 –––
Q
godr
Gate Charge Overdrive ––– 6.7 ––– See Fig. 16
Q
sw
Switch Charge (Q
gs2
+ Q
gd
)
–––10–––
Q
oss
Output Charge ––– 14 ––– nC
t
d(on)
Turn-On Delay Time ––– 14 –––
t
r
Rise Time –––38–––
t
d(off)
Turn-Off Delay Time ––– 18 ––– ns
t
f
Fall Time ––– 5.0 –––
C
iss
Input Capacitance ––– 2840 –––
C
oss
Output Capacitance ––– 620 ––– pF
C
rss
Reverse Transfer Capacitance ––– 290 –––
Avalanche Characteristics
Parameter Units
E
AS
Single Pulse Avalanche Energy
mJ
I
AR
Avalanche Current
A
E
AR
Repetitive Avalanche Energy
mJ
Diode Characteristics
Parameter Min. Typ. Max. Units
I
S
Continuous Source Current ––– –––
105
(Body Diode) A
I
SM
Pulsed Source Current ––– ––– 420
(Body Diode)
V
SD
Diode Forward Voltage ––– ––– 1.0 V
t
rr
Reverse Recovery Time ––– 18 27 ns
Q
rr
Reverse Recovery Charge ––– 7.2 11 nC
V
GS
= 20V
V
GS
= -20V
Conditions
11
Max.
220
17
ƒ = 1.0MHz
Conditions
V
GS
= 0V, I
D
= 250µA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 21A
V
DS
= V
GS
, I
D
= 250µA
V
DS
= 24V, V
GS
= 0V
V
DS
= 24V, V
GS
= 0V, T
J
= 125°C
Clamped Inductive Load
V
DS
= 15V, I
D
= 17A
V
DS
= 16V, V
GS
= 0V
V
DD
= 15V, V
GS
= 4.5V
I
D
= 17A
V
DS
= 15V
T
J
= 25°C, I
F
= 17A, V
DD
= 15V
di/dt = 100A/µs
T
J
= 25°C, I
S
= 17A, V
GS
= 0V
showing the
integral reverse
p-n junction diode.
MOSFET symbol
V
GS
= 4.5V, I
D
= 17A
–––
V
GS
= 4.5V
Typ.
–––
–––
I
D
= 17A
V
GS
= 0V
V
DS
= 15V
IRL8113/S/LPbF
www.irf.com 3
Fig 4. Normalized On-Resistance
vs. Temperature
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
0.1 1 10
V
DS
, Drain-to-Source Voltage (V)
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
≤
60µs PULSE WIDTH
Tj = 25°C
3.0V
VGS
TOP 10V
9.0V
7.0V
5.0V
4.5V
4.0V
3.5V
BOTTOM 3.0V
1.0 2.0 3.0 4.0 5.0 6.0 7.0
V
GS
, Gate-to-Source Voltage (V)
1
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
Α
)
V
DS
= 10V
≤
60µs PULSE WIDTH
T
J
= 25°C
T
J
= 175°C
0.1 1 10
V
DS
, Drain-to-Source Voltage (V)
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
≤
60µs PULSE WIDTH
Tj = 175°C
3.0V
VGS
TOP 10V
9.0V
7.0V
5.0V
4.5V
4.0V
3.5V
BOTTOM 3.0V
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
T
J
, Junction Temperature (°C)
0.5
1.0
1.5
2.0
R
D
S
(
o
n
)
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
(
N
o
r
m
a
l
i
z
e
d
)
I
D
= 42A
V
GS
= 10V
P1-P3P4-P6P7-P9P10-P12P13-P13

IRL8113PBF

Mfr. #:
Buy IRL8113PBF
Manufacturer:
Infineon Technologies
Description:
MOSFET MOSFT 30V 105A 23nC 6mOhm Qg log lvl
Lifecycle:
New from this manufacturer.
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