IR2151PBF

Features
Floating channel designed for bootstrap operation
Fully operational to +600V
Tolerant to negative transient voltage
dV/dt immune
Undervoltage lockout
Programmable oscillator frequency
f =
×+ ×
1
1.4 (R 75 ) C
TT
Matched propagation delay for both channels
Low side output in phase with R
T
Description
The IR2151 is a high voltage, high speed, self-os-
cillating power MOSFET and IGBT driver with both
high and low side referenced output channels. Pro-
prietary HVIC and latch immune CMOS technologies
enable ruggedized monolithic construction. The front
end features a programmable oscillator which is simi-
lar to the 555 timer. The output drivers feature a high
pulse current buffer stage and an internal deadtime
designed for minimum driver cross-conduction. Propa-
gation delays for the two channels are matched to sim-
plify use in 50% duty cycle applications. The floating
channel can be used to drive an N-channel power
MOSFET or IGBT in the high side configuration that
operates off a high voltage rail up to 600 volts.
Preliminary Data Sheet No. PD60034-J
SELF-OSCILLATING HALF-BRIDGE DRIVER
Product Summary
V
OFFSET
600V max.
Duty Cycle 50%
I
O
+/- 100 mA / 210 mA
V
OUT
10 - 20V
Deadtime (typ.) 1.2 µs
Packages
Typical Connection
1
8 Lead PDIP
8 Lead SOIC
IR2151
(NOTE: For new designs, we
recommend IR’s new products IR2153 and IR21531)
up to 600V
V
CC
V
B
V
S
HO
LOCOM
R
T
C
T
TO
LOAD
(Refer to Lead Assignment diagram for correct pin configuration)
IR2151
2
Symbol Definition Min. Max. Units
V
B
High side floating supply voltage -0.3 625
V
S
High side floating supply offset voltage V
B
- 25 V
B
+ 0.3
V
HO
High side floating output voltage V
S
- 0.3 V
B
+ 0.3
V
LO
Low side output voltage -0.3 V
CC
+ 0.3
V
RT
R
T
voltage -0.3 V
CC
+ 0.3
V
CT
C
T
voltage -0.3 V
CC
+ 0.3
I
CC
Supply current (note 1) 25
I
RT
R
T
output current -5 5
dV
s
/dt Allowable offset supply voltage transient 50 V/ns
P
D
Package power dissipation @ T
A
+25°C (8 lead DIP) 1.0
(8 lead SOIC) 0.625
R
θJA Thermal resistance, junction to ambient (8 lead DIP) 125
(8 lead SOIC) 200
T
J
Junction temperature 150
T
S
Storage temperature -55 150 °C
T
L
Lead temperature (soldering, 10 seconds) 300
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage param-
eters are absolute voltages referenced to COM. The thermal resistance and power dissipation ratings are measured
under board mounted and still air conditions.
V
°C/W
W
mA
structure between the chip V
CC
and COM which has a nominal breakdown voltage of 15.6V. Therefore, the IC
supply voltage is normally derived by forcing current into the supply lead (typically by means of a high value
resistor connected between the chip V
CC
and the rectified line voltage and a local decoupling capacitor from
V
CC
to COM) and allowing the internal zener clamp circuit to determine the nominal supply voltage. There-
fore, this circuit should not be driven by a DC, low impedance power source of greater than V
CLAMP
.
Note 1: Because of the IR2151’s application specificity toward off-line supply systems, this IC contains a zener clamp
Symbol Definition Min. Max. Units
V
B
High side sloating supply absolute voltage V
S
+ 10 V
S
+ 20
V
S
High side floating supply offset voltage 600
V
HO
High side floating output voltage V
S
V
B
V
LO
Low side output voltage 0 V
CC
I
CC
Supply current (note 1) 5 mA
T
A
Ambient temperature -40 125 °C
Recommended Operating Conditions
The input/output logic timing diagram is shown in figure 1. For proper operation the device should be used within the
recommended conditions. The V
S
offset rating is tested with all supplies biased at 15V differential.
V
IR2151
3
Symbol Definition Min. Typ. Max. Units Test Conditions
t
r
Turn-on rise time 80 120
t
f
Turn-off fall time 40 70
DT Deadtime 0.50 1.20 2.25 µs
DR
T
duty cycle 48 50 52 %
Dynamic Electrical Characteristics
V
BIAS
(V
CC
, V
BS
) = 12V, C
L
= 1000 pF and T
A
= 25°C unless otherwise specified.
ns
Symbol Definition Min. Typ. Max. Units Test Conditions
f
OSC
Oscillator frequency 19.4 20.0 20.6 R
T
= 35.7 k
94 100 106 R
T
= 7.04 k
V
CLAMP
V
CC
zener shunt clamp voltage 14.4 15.6 16.8 I
CC
= 5 mA
V
CT+
2/3 V
CC
threshold 7.8 8.0 8.2
V
CT-
1/3 V
CC
threshold 3.8 4.0 4.2
V
CTUV
C
T
undervoltage lockout 20 50 2.5V<V
CC
<V
CCUV+
V
RT+
R
T
high level output voltage, V
CC
- R
T
0 100 I
RT
= -100 µA
200 300 I
RT
= -1 mA
V
RT-
R
T
Low Level Output Voltage 20 50 I
RT
= 100 µA
200 300 I
RT
= 1 mA
V
RTUV
R
T
Undervoltage Lockout, V
CC
- R
T
0 100 2.5V<V
CC
<V
CCUV+
V
OH
High Level Output Voltage, V
BIAS
- V
O
100 I
O
= 0A
V
OL
Low Level Output Voltage, V
O
100 I
O
= 0A
I
LK
Offset Supply Leakage Current 50 V
B
= V
S
= 600V
I
QBS
Quiescent V
BS
Supply Current 10 50
I
QCC
Quiescent V
CC
Supply Current 400 950
I
CT
C
T
Input Current 0.001 1.0
V
CCUV+
V
CC
Supply Undervoltage Positive Going 7.7 8.4 9.2
Threshold
V
CCUV-
V
CC
Supply Undervoltage Negative Going 7.4 8.1 8.9
Threshold
V
CCUVH
V
CC
Supply Undervoltage Lockout Hysteresis 200 500 mV
I
O+
Output High Short Circuit Pulsed Current 100 125 V
O
= 0V
I
O-
Output Low Short Circuit Pulsed Current 210 250 V
O
= 15V
Static Electrical Characteristics
V
BIAS
(V
CC
, V
BS
) = 12V, C
L
= 1000 pF, C
T
= 1 nF and T
A
= 25°C unless otherwise specified. The V
IN
, V
TH
and I
IN
parameters are referenced to COM. The V
O
and I
O
parameters are referenced to COM and are applicable to the
respective output leads: HO or LO.
mV
V
mA
µA
kHz
V

IR2151PBF

Mfr. #:
Manufacturer:
Infineon Technologies
Description:
IC DRIVER HALF BRIDGE DIP-8
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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