BSS192PH6327XTSA1

P1-P3 P4-P6 P7-P8

2012-12-03

Rev 1.7 Page 1

BSS192P

SIPMOS







Small-Signal-Transistor

Product Summary

V

DS

-250 V

R

DS

(

on

)

12 Ω

I

D

-0.19 A

Feature

• P-Channel

• Enhancement mode

• Logic Level

• dv/dt rated

PG-SOT89

2

1

3

VPS05162

2

Gate

pin1

Drain

pin 2

Source

pin 3

Marking

KC

Type Package Pb-free Tape and Reel Information

BSS 192 P

PG-SOT89 Yes

Maximum Ratings, at T

j

= 25 °C, unless otherwise specified

Parameter

Symbol Value Unit

Continuous drain current

T

A

=25°C

T

A

=70°C

I

D

-0.19

-0.1

A

Pulsed drain current

T

A

=25°C

I

D puls

-0.76

Reverse diode dv/dt

I

S

=-0.19A, V

DS

=-200V, di/dt=-200A/µs, T

jmax

=150°C

dv/dt

6 kV/µs

Gate source voltage V

GS

±20

V

Power dissipation

T

A

=25°C

P

tot

1 W

Operating and storage temperature T

j

,

T

st

g

-55... +150

°C

IEC climatic category; DIN IEC 68-1

55/150/56

H6327: 1000 pcs/reel

•QualifiedaccordingtoAECQ101

ESD Class

JESD22-A114-HBM

Class 1a

•

HalogenfreeaccordingtoIEC61249221

2012-12-03

Rev 1.7 Page 2

BSS 192 P

Thermal Characteristics

Parameter

Symbol Values Unit

min. typ. max.

Characteristics

Thermal resistance, junction - soldering point

(Pin 2)

R

thJS

- - 10 K/W

Thermal resistance, junction - ambient, leaded R

thJ

A

- - 125

Electrical Characteristics, at T

j

= 25 °C, unless otherwise specified

Parameter

Symbol Values Unit

min. typ. max.

Static Characteristics

Drain-source breakdown voltage

V

GS

=0, I

D

=-250µA

V

(BR)DSS

-250 - - V

Gate threshold voltage, V

GS

= V

DS

I

D

=-130µA

V

GS(th)

-1 -1.5 -2

Zero gate voltage drain current

V

DS

=-250V, V

GS

=0, T

j

=25°C

V

DS

=-250V, V

GS

=0, T

j

=150°C

I

DSS

-

-

-0.1

-10

-0.2

-100

µA

Gate-source leakage current

V

GS

=-20V, V

DS

=0

I

GSS

- -10 -100 nA

Drain-source on-state resistance

V

GS

=-2.8V, I

D

=-0.025A

R

DS(on)

- 10 20 Ω

Drain-source on-state resistance

V

GS

=-4.5V, I

D

=-0.1A

R

DS(on)

- 8.3 15

Drain-source on-state resistance

V

GS

=-10V, I

D

=-0.19A

R

DS(on)

- 7.7 12

2012-12-03

Rev 1.7 Page 3

BSS 192 P

Electrical Characteristics, at T

j

= 25 °C, unless otherwise specified

Parameter

Symbol Conditions Values Unit

min. typ. max.

Dynamic Characteristics

Transconductance g

fs

|V

DS

|≥2*|I

D

|*R

DS(on)max

,

I

D

=-0.1A

0.19 0.38 - S

Input capacitance C

iss

V

GS

=0, V

DS

=-25V,

f=1MHz

- 83 104 pF

Output capacitance C

oss

- 13 16

Reverse transfer capacitance C

rss

- 6 8

Turn-on delay time t

d

(

on

)

V

DD

=-125V, V

GS

=-10V,

I

D

=-0.19A, R

G

=2Ω

- 4.7 7 ns

Rise time t

r

- 5.2 8

Turn-off delay time t

d

(

off

)

- 72 108

Fall time t

f

- 50 75

Gate Charge Characteristics

Gate to source charge

Q

g

s

V

DD

=-200V, I

D

=-0.19A - -0.2 -0.25 nC

Gate to drain charge Q

g

d

- -1.9 -2.4

Gate charge total Q

g

V

DD

=-200V, I

D

=-0.19A,

V

GS

=0 to -10V

- -4.9 -6.1

Gate plateau voltage V

(p

lateau

)

V

DD

=-200V, I

D

=-0.19A - -2.63 - V

Reverse Diode

Inverse diode continuous

forward current

I

S

T

A

=25°C - - -0.19 A

Inv. diode direct current, pulse

d

I

SM

- - -0.76

Inverse diode forward voltage V

SD

V

GS

=0, I

F

=-0.19A - -0.78 -1.1 V

Reverse recovery time t

rr

V

R

=-125V, I

F

=

l

S

,

di

F

/dt=100A/µs

- 46 57 ns

Reverse recovery charge Q

rr

- 72 90 nC

P1-P3 P4-P6 P7-P8

BSS192PH6327XTSA1

Mfr. #:

Buy BSS192PH6327XTSA1

Manufacturer:

Infineon Technologies

Description:

MOSFET SMALL SIGNAL+P-CH

Lifecycle:

New from this manufacturer.

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