OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

2N7002E-7-F

P1-P3P4-P5
2N7002E
Document number: DS30376 Rev. 14 - 2
1 of 5
www.diodes.com
August 2013
© Diodes Incorporated
2N7002E
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V
(BR)DSS
R
DS(ON)
max
I
D
max
T
A
= +25°C
60V
3 @ V
GS
= 10V
300mA
Description
This MOSFET has been designed to minimize the on-state resistance
(R
DS(ON)
) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Applications
Motor Control
Power Management Functions
Features and Benefits
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Small Surface Mount Package
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SOT23
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish annealed over Alloy 42 leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
Weight: 0.008 grams (approximate)
Ordering Information (Note 4)
Part Number Case Packaging
2N7002E-7-F SOT23 3,000/Tape & Reel
2N7002E-13-F SOT23 10,000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Date Code Key
Year 2003 2004 2005 2006 2007 2008 2009 2010 2011 2012 2013 2014 2015 2016 2017
Code P R S T U V W X Y Z A B C D E
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
SOT23
Top View
D
G
S
Top View
Pin Out Confi
g
uration
Equivalent Circuit
Source
Gate
Drain
K7B = Product Type Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
= Date Code Marking for CAT (Chengdu Assembly/ Test site)
Y or = Year (ex: A = 2013)
M = Month (ex: 9 = September)
Shanghai A/T SiteChengdu A/T Site
e3
Y
Y
M
K7B
YM
K7B
YM
2N7002E
Document number: DS30376 Rev. 14 - 2
2 of 5
www.diodes.com
August 2013
© Diodes Incorporated
2N7002E
Maximum Ratings (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Drain-Source Voltage
V
DSS
60 V
Drain-Gate Voltage R
GS
1.0M V
DGR
60 V
Gate-Source Voltage Continuous
Pulsed
V
GSS
±20
±40
V
Continuous Drain Current (Note 5) V
GS
= 10V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
250
200
mA
Continuous Drain Current (Note 6) V
GS
= 10V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
300
240
mA
Maximum Body Diode Forward Current (Note 6)
I
S
500 mA
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
I
DM
800 mA
Thermal Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Total Power Dissipation
(Note 5)
P
D
370
mW
(Note 6) 540
Thermal Resistance, Junction to Ambient
(Note 5)
R
JA
348
°C/W
(Note 6) 241
Thermal Resistance, Junction to Case
(Note 6)
R
JC
91
Operating and Storage Temperature Range
T
J,
T
STG
-55 to 150 °C
Electrical Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV
DSS
60 70
V
V
GS
= 0V, I
D
= 10µA
Zero Gate Voltage Drain Current @ T
C
= +25°C
@ T
C
= +125°C
I
DSS
1.0
500
µA
V
DS
= 60V, V
GS
= 0V
Gate-Body Leakage
I
GSS
±10 nA
V
GS
= ±15V, V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS(th)
1.0
2.5 V
V
DS
= V
GS
, I
D
= 250µA
Static Drain-Source On-Resistance @ T
J
= +25°C
R
DS (ON)
1.6
2.0
3
4
V
GS
= 10V, I
D
= 250mA
V
GS
= 4.5V, I
D
= 200mA
On-State Drain Current
I
D(ON)
0.8 1.0
A
V
GS
= 10V, V
DS
= 7.5V
Forward Transconductance
g
FS
80
mS
V
DS
=10V, I
D
= 0.2A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
C
iss
22 50 pF
V
DS
= 25V, V
GS
= 0V, f = 1.0MHz
Output Capacitance
C
oss
11 25 pF
Reverse Transfer Capacitance
C
rss
2.0 5.0 pF
Gate resistance
R
g

120
V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
Total Gate Charge (V
GS
= 4.5V) Q
g

223
pC
V
DS
= 10V, I
D
= 250mA
Gate-Source Charge
Q
gs

82
pC
Gate-Drain Charge
Q
gd

178
pC
SWITCHING CHARACTERISTICS (Note 8)
Turn-On Delay Time
t
D(ON)
7.0 20 ns
V
DD
= 30V, I
D
= 0.2A,
R
L
= 150, V
GEN
= 10V, R
GEN
= 25
Turn-Off Delay Time
t
D(OFF)
11 20 ns
Notes: 5. Device mounted on FR-4 PCB, with minimum recommended pad layout.
6. Device mounted on 1” x 1” FR-4 PCB with high coverage 2oz. Copper, single sided.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
2N7002E
Document number: DS30376 Rev. 14 - 2
3 of 5
www.diodes.com
August 2013
© Diodes Incorporated
2N7002E
0
0.2
0.4
0.6
0.8
1.0
01 2
3
45
I, D
R
AIN-S
O
U
R
C
E
C
U
R
R
EN
T
(A)
D
V , DRAIN-SOURCE VOLTAGE (V)
Fig. 1 On-Region Characteristics
DS
0
V , GATE TO SOURCE VOLTAGE (V)
Fig. 2 Drain Current vs. Gate-Source Voltage
GS
0.4
0.8
1.2
1.6
2.0
012
34
5
67
I, D
R
AI
N
C
U
R
R
E
N
T
(A)
D
T = -55°C
A
T = 125°C
A
T = 25°C
A
0
1
2
3
4
5
0246810
V , GATE TO SOURCE VOLTAGE (V)
Fig. 3 On Resistance vs. Gate-Source Voltage
GS
I = 75mA
D
I = 250mA
D
R
, D
R
AIN-S
O
U
R
C
E
O
N-
R
ESIS
T
AN
C
E ( )
DS(ON)
0
1
2
3
4
5
0
0.2
0.4
0.6 0.8
1.0
I , DRAIN CURRENT (A)
Fig. 4 On Resistance vs. Drain Current
D
V = 4.5V
GS
V = 10V
GS
R
, D
R
AI
N
-S
O
U
R
C
E
O
N
-
R
ESIS
T
A
N
C
E ( )
DS(ON)
0
T , JUNCTION TEMPERATURE (°C)
Fig. 5 On-Resistance vs. Junction Temperature
J
1
2
3
4
5
-75
-50
-25 0 25
50 75
100 125
150
V = 10V @ 250mA
GS
V = 4.5V @ 200mA
GS
R
, D
R
AIN-S
O
U
R
C
E
O
N-
R
ESIS
T
AN
C
E ( )
DS(ON)
0
50
100
25 50
75
100 125
150
175
200
P
,
P
O
WE
R
DISSI
P
A
T
I
O
N (mW)
D
T , AMBIENT TEMPERATURE (°C)
Fig. 6 Max Power Dissipation vs. Ambient Temperature
A
150
200
250
300
350
0
P1-P3P4-P5

2N7002E-7-F

Mfr. #:
Buy 2N7002E-7-F
Manufacturer:
Diodes Incorporated
Description:
MOSFET N-Channel
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet