SSM6J511NU
4
5.4.
5.4.
5.4.
5.4. Gate Charge Characteristics (Unless otherwise specified, T
Gate Charge Characteristics (Unless otherwise specified, T
Gate Charge Characteristics (Unless otherwise specified, T
Gate Charge Characteristics (Unless otherwise specified, T
a
a
a
a
= 25
= 25
= 25
= 25
)
)
)
)
Characteristics
Total gate charge (gate-source plus gate-drain)
Gate-source charge 1
Gate-drain charge
Symbol
Q
g
Q
gs1
Q
gd
Test Condition
V
DD
= -6 V, V
GS
= -4.5 V,
I
D
= -10 A
Min
Typ.
47
2.7
8.5
Max
Unit
nC
5.5.
5.5.
5.5.
5.5. Source-Drain Characteristics (Unless otherwise specified, T
Source-Drain Characteristics (Unless otherwise specified, T
Source-Drain Characteristics (Unless otherwise specified, T
Source-Drain Characteristics (Unless otherwise specified, T
a
a
a
a
= 25
= 25
= 25
= 25
)
)
)
)
Characteristics
Diode forward voltage (Note 1)
Symbol
V
DSF
Test Condition
I
D
= 4 A, V
GS
= 0 V
Min
Typ.
0.6
Max
1.0
Unit
V
Note 1: Pulse measurement.
6.
6.
6.
6. Marking
Marking
Marking
Marking
7.
7.
7.
7. Internal Equivalent Circuit
Internal Equivalent Circuit
Internal Equivalent Circuit
Internal Equivalent Circuit
2017-04-18
Rev.3.0
©2016 Toshiba Corporation