EAILP05RDDB3 Datasheet EAILP05RDDB3 | P1-P3

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5mm Infrared LED ,T-1

EAILP05RDDB3

Features

․High reliability

․High radiant intensity

․Peak wavelength λp=875nm

․2.54mm Lead spacing

․Low forward voltage

․Pb Free

Description

․Everlight Americas Infrared Emitting Diode (EAILP05RDDB3) is a

high intensity diode , molded in a blue transparent plastic package.

․The device is spectrally matched with phototransistor , photodiode

and infrared receiver module.

A

pplications

․Optoelectronic switch

․Infrared applied system

․Smoke detecto

r

ATASHEET

5mm Infrared LED

EAILP05RDDB3

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Device Selection Guide

Chip

Materials

Lens Color

GaAlAs Blue

A

bsolute Maximum Ratings (Ta=25℃)

Parameter Symbol Rating Unit

Continuous Forward Current I

F

100

mA

Peak Forward Current(*1) I

FP

1.0

A

Reverse Voltage V

R

5

V

Operating Temperature T

opr

-40 ~ +85

℃

Storage Temperature T

stg

-40 ~ +100

℃

Soldering Temperature (*2) T

sol

260℃

℃

Power Dissipation at (or below)

25℃Free Air Temperature

P

d

150

mW

Notes:

*1:I

FP

Conditions--Pulse Width≦100μs and Duty≦1%.

*2 Soldering time≦5seconds.

ATASHEET

5mm Infrared LED

EAILP05RDDB3

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Electro-Optical Characteristics (Ta=25℃)

Parameter Symbol Min. Typ. Max. Unit Condition

Radiant Intensity

I

e

7.8 20 -----

mW/sr

I

F

=20mA

----- 90 -----

I

F

=100mA

Pulse Width≦100μs ,Duty≦1%

Peak Wavelength

λp

----- 875 -----

nm I

F

=20mA

Spectral Bandwidth

Δλ

----- 45 -----

nm I

F

=20mA

Forward Voltage

VF

----- 1.30 1.65

V

I

F

=20mA

----- 1.40 1.80

I

F

=100mA

Pulse Width≦100μs ,Duty≦1%

Reverse Current

I

R

---- ---- 10

uA V

R

=5V

View Angle

2θ1/2

---- 20 ----

deg I

F

=20mA

Rank

Condition:I

F

=20mA Unit：mW/sr

Bin Number M N P Q R

Min 7.8 11.0 15.0 21.0 30.0

Max 12.5 17.6 24.0 34.0 48.0

EAILP05RDDB3

EAILP05RDDB3

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