OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

HFA08TA60CS

P1-P3P4-P6
Document Number: 93041 For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
Revision: 22-Oct-08 1
HEXFRED
®
Ultrafast Soft Recovery Diode, 2 x 4 A
HFA08TA60CS
Vishay High Power Products
FEATURES
• Ultrafast recovery
• Ultrasoft recovery
• Very low I
RRM
• Very low Q
rr
• Specified at operating conditions
• Designed and qualified for industrial level
BENEFITS
• Reduced RFI and EMI
• Reduced power loss in diode and switching transistor
• Higher frequency operation
• Reduced snubbing
• Reduced parts count
DESCRIPTION
HFA08TA60CS is a state of the art center tap ultrafast
recovery diode. Employing the latest in epitaxial construction
and advanced processing techniques it features a superb
combination of characteristics which result in performance
which is unsurpassed by any rectifier previously available.
With basic ratings of 600 V and 4 A per leg continuous
current, the HFA08TA60CS is especially well suited for use
as the companion diode for IGBTs and MOSFETs. In
addition to ultrafast recovery time, the HEXFRED
®
product
line features extremely low values of peak recovery current
(I
RRM
) and does not exhibit any tendency to “snap-off” during
the t
b
portion of recovery. The HEXFRED features combine
to offer designers a rectifier with lower noise and significantly
lower switching losses in both the diode and the switching
transistor. These HEXFRED advantages can help to
significantly reduce snubbing, component count and
heatsink sizes. The HEXFRED HFA08TA60CS is ideally
suited for applications in power supplies and power
conversion systems (such as inverters), motor drives, and
many other similar applications where high speed, high
efficiency is needed.
PRODUCT SUMMARY
V
R
600 V
V
F
at 4 A at 25 °C 1.8 V
I
F(AV)
2 x 4 A
t
rr
(typical) 17 ns
T
J
(maximum) 150 °C
Q
rr
40 nC
dI
(rec)M
/dt 280 A/µs
D
2
PAK
Base
common
cathode
Anode Anode
Common
cathode
1
3
2
2
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Cathode to anode voltage V
R
600 V
Maximum continuous forward current
per leg
I
F
T
C
= 100 °C
4
A
per device 8
Single pulse forward current I
FSM
25
Maximum repetitive forward current I
FRM
16
Maximum power dissipation P
D
T
C
= 25 °C 25
W
T
C
= 100 °C 10
Operating junction and storage temperature range T
J
, T
Stg
- 55 to + 150 °C
www.vishay.com For technical questions, contact: diodes-tech@vishay.com
Document Number: 93041
2 Revision: 22-Oct-08
HFA08TA60CS
Vishay High Power Products
HEXFRED
®
Ultrafast Soft Recovery Diode,
2 x 4 A
ELECTRICAL SPECIFICATIONS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Cathode to anode
breakdown voltage
V
BR
I
R
= 100 µA 600 - -
V
Maximum forward voltage V
FM
I
F
= 4.0 A
See fig. 1
-1.51.8
I
F
= 8.0 A - 1.8 2.2
I
F
= 4.0 A, T
J
= 125 °C - 1.4 1.7
Maximum reverse
leakage current
I
RM
V
R
= V
R
rated
See fig. 2
- 0.17 3.0
µA
T
J
= 125 °C, V
R
= 0.8 x V
R
rated - 44 300
Junction capacitance C
T
V
R
= 200 V See fig. 3 - 4.0 8.0 pF
Series inductance L
S
Measured lead to lead 5 mm from package body - 8.0 - nH
DYNAMIC RECOVERY CHARACTERISTICS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Reverse recovery time
See fig. 5, 6 and 16
t
rr
I
F
= 1.0 A, dI
F
/dt = 200 A/µs, V
R
= 30 V - 17 -
nst
rr1
T
J
= 25 °C
I
F
= 4.0 A
dI
F
/dt = 200 A/µs
V
R
= 200 V
-2842
t
rr2
T
J
= 125 °C - 38 57
Peak recovery current
See fig. 7 and 8
I
RRM1
T
J
= 25 °C - 2.9 5.2
A
I
RRM2
T
J
= 125 °C - 3.7 6.7
Reverse recovery charge
See fig. 9 and 10
Q
rr1
T
J
= 25 °C - 40 60
nC
Q
rr2
T
J
= 125 °C - 70 105
Peak rate of fall of recovery
current during t
b
See fig. 11 and 12
dI
(rec)M
/dt1 T
J
= 25 °C - 280 -
A/µs
dI
(rec)M
/dt2 T
J
= 125 °C - 235 -
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Lead temperature T
lead
0.063" from case (1.6 mm) for 10 s - - 300 °C
Thermal resistance,
junction to case
R
thJC
--5.0
K/W
Thermal resistance,
junction to ambient
R
thJA
Typical socket mount - - 80
Weight
-2.0- g
-0.07- oz.
Mounting torque
6.0
(5.0)
-
12
(10)
kgf · cm
(lbf · in)
Marking device Case style D
2
PAK HFA08TA60CS
Document Number: 93041 For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
Revision: 22-Oct-08 3
HFA08TA60CS
HEXFRED
®
Ultrafast Soft Recovery Diode,
2 x 4 A
Vishay High Power Products
Fig. 1 - Maximum Forward Voltage Drop vs.
Instantaneous Forward Current
Fig. 2 - Typical Reverse Current vs.
Reverse Voltage
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics
1
10
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
0 62
3
V
FM
- Forward Voltage Drop (V)
I
F
- Instantaneous
Forward Current (A)
100
14
0.1
5
0.01
0.1
1
10
100
0 100
V
R
- Reverse Voltage (V)
I
R
- Reverse Current (µA)
T
J
= 125 °C
T
J
= 25 °C
1000
200 500400
300
0.001
T
J
= 150 °C
10
100
1 10 100 1000
1
V
R
- Reverse Voltage (V)
C
T
- Junction Capacitance (pF)
T
J
= 25 °C
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1
1
t
1
- Rectangular Pulse Duration (s)
Z
thJC
- Thermal Response
Single pulse
(thermal resistance)
P
DM
t
1
t
2
Notes:
1. Duty factor D = t
1
/t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
10
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
P1-P3P4-P6

HFA08TA60CS

Mfr. #:
Buy HFA08TA60CS
Manufacturer:
Vishay
Description:
DIODE ARRAY GP 600V 4A D2PAK
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet