STP60NE06L-16
STP60NE06L-16FP
N - CHANNEL 60V - 0.014Ω - 60A TO-220/TO-220FP
STripFET POWER MOSFET
■
TYPICAL R
DS(on)
= 0.014
Ω
■
AVALANCHE RUGGED TECHNOLOGY
■
LOW GATE CHARGE
■
HIGH CURRENT CAPABILITY
■
175
o
C OPERATING TEMPERATURE
■
LOW THRESHOLD DRIVE
DESCRIPTION
This Power Mosfet is the latest development of
STMicroelectronis unique "Single Feature Size
"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remarka-
ble manufacturing reproducibility.
APPLICATIONS
■
HIGH CURRENT, HIGH SPEED SWITCHING
■
SOLENOID AND RELAY DRIVERS
■
DC-DC & DC-AC CONVERTERS
■
AUTOMOTIVE ENVIRONMENT
®
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
STP60NE06L-16 STP60NE06L-16FP
V
DS
Drain-source Voltage (V
GS
= 0) 60 V
V
DGR
Drain- gate Voltage (R
GS
= 20 kΩ)60V
V
GS
Gate-source Voltage ± 15 V
I
D
Drain Current (continuous) at T
c
= 25
o
C60 35A
I
D
Drain Current (continuous) at T
c
= 100
o
C42 24A
I
DM
(•) Drain Current (pulsed) 240 140 A
P
tot
Total Dissipation at T
c
= 25
o
C 150 45 W
Derating Factor 1 0.3 W/
o
C
V
ISO
Insulation Withstand Voltage (DC) 2000 V
dv/dt Peak Diode Recovery voltage slope 6 V/ns
T
stg
Storage Temperature -65 to 175
o
C
T
j
Max. Operating Junction Temperature 175
o
C
(
•
) Pulse width limited by safe operating area (
1
) I
SD
≤
60 A, di/dt
≤
300 A/
µ
s, V
DD
≤
V
(BR)DSS
, T
j
≤
T
JMAX
TYPE V
DSS
R
DS(on)
I
D
STP60NE06L-16
STP60NE06L-16FP
60 V
60 V
< 0.016 Ω
< 0.016 Ω
60 A
35 A
May 2000
TO-220 TO-220FP
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Obsolete Product(s) - Obsolete Product(s)
Obsolete Product(s) - Obsolete Product(s)
