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2N6288G

P1-P3P4-P5
© Semiconductor Components Industries, LLC, 2014
November, 2014 − Rev. 11
1 Publication Order Number:
2N6107/D
2N6107, 2N6109, 2N6111 (PNP),
2N6288, 2N6292 (NPN)
Complementary Silicon
Plastic Power Transistors
These devices are designed for use in general−purpose amplifier and
switching applications.
Features
• High DC Current Gain
• High Current Gain − Bandwidth Product
• TO−220 Compact Package
• These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS (Note 1)
Rating Symbol Value Unit
Collector−Emitter Voltage
2N6111, 2N6288
2N6109
2N6107, 2N6292
V
CEO
30
50
70
Vdc
Collector−Base Voltage
2N6111, 2N6288
2N6109
2N6107, 2N6292
V
CB
40
60
80
Vdc
Emitter−Base Voltage V
EB
5.0 Vdc
Collector Current − Continuous I
C
7.0 Adc
Collector Current − Peak I
CM
10 Adc
Base Current I
B
3.0 Adc
Total Power Dissipation
@ T
C
= 25_C
Derate above 25_C
P
D
40
0.32
W
W/°C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
−65 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Indicates JEDEC Registered Data.
THERMAL CHARACTERISTICS
Characteristics Symbol Max Unit
Thermal Resistance, Junction−to−Case
R
q
JC
3.125
_C/W
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
7 AMPERE
POWER TRANSISTORS
COMPLEMENTARY SILICON
30 − 50 − 70 VOLTS, 40 WATTS
www.onsemi.com
MARKING DIAGRAM
2N6xxxG
AYWW
2N6xxx = Specific Device Code
xxx = See Table on Page 4
G = Pb−Free Package
A = Assembly Location
Y = Year
WW = Work Week
See detailed ordering, marking, and shipping information in
the package dimensions section on page 4 of this data sheet
.
ORDERING INFORMATION
1
BASE
EMITTER 3
COLLECTOR 2, 4
1
BASE
EMITTER 3
COLLECTOR 2, 4
PNP NPN
TO−220
CASE 221A
STYLE 1
1
2
3
4
2N6107, 2N6109, 2N6111 (PNP), 2N6288, 2N6292 (NPN)
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
C
= 25_C unless otherwise noted) (Note 2)
Characteristic
Symbol Min Max Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage
(Note 3)
(I
C
= 100 mAdc, I
B
= 0)
2N6111, 2N6288
2N6109
2N6107, 2N6292
V
CEO(sus)
30
50
70
−
−
−
Vdc
Collector Cutoff Current
(V
CE
= 20 Vdc, I
B
= 0)
2N6111, 2N6288
(V
CE
= 40 Vdc, I
B
= 0)
2N6109
(V
CE
= 60 Vdc, I
B
= 0)
2N6107, 2N6292
I
CEO
−
−
−
1.0
1.0
1.0
mAdc
Collector Cutoff Current
(V
CE
= 40 Vdc, V
EB(off)
= 1.5 Vdc)
2N6111, 2N6288
(V
CE
= 60 Vdc, V
EB(off)
= 1.5 Vdc)
2N6109
(V
CE
= 80 Vdc, V
EB(off)
= 1.5 Vdc)
2N6107, 2N6292
(V
CE
= 30 Vdc, V
EB(off)
= 1.5 Vdc, T
C
= 150_C)
2N6111, 2N6288
(V
CE
= 50 Vdc, V
EB(off)
= 1.5 Vdc, T
C
= 150_C)
2N6109
(V
CE
= 70 Vdc, V
EB(off)
= 1.5 Vdc, T
C
= 150_C)
2N6107, 2N6292
I
CEX
−
−
−
−
−
−
100
100
100
2.0
2.0
2.0
mAdc
mAdc
Emitter Cutoff Current
(V
BE
= 5.0 Vdc, I
C
= 0)
I
EBO
− 1.0
mAdc
ON CHARACTERISTICS (Note 3)
DC Current Gain
(I
C
= 2.0 Adc, V
CE
= 4.0 Vdc)
2N6107, 2N6292
(I
C
= 2.5 Adc, V
CE
= 4.0 Vdc)
2N6109
(I
C
= 3.0 Adc, V
CE
= 4.0 Vdc)
2N6111, 2N6288
(I
C
= 7.0 Adc, V
CE
= 4.0 Vdc)
All Devices
h
FE
30
30
30
2.3
150
150
150
−
−
Collector−Emitter Saturation Voltage
(I
C
= 7.0 Adc, I
B
= 3.0 Adc)
V
CE(sat)
− 3.5
Vdc
Base−Emitter On Voltage
(I
C
= 7.0 Adc, V
CE
= 4.0 Vdc)
V
BE(on)
− 3.0
Vdc
DYNAMIC CHARACTERISTICS
Current Gain − Bandwidth Product (Note 4)
(I
C
= 500 mAdc, V
CE
= 4.0 Vdc, f
test
= 1.0 MHz)
2N6288, 2N6292
2N6107, 2N6109, 2N6111
f
T
4.0
10
−
−
MHz
Output Capacitance
(V
CB
= 10 Vdc, I
E
= 0, f = 1.0 MHz)
C
ob
− 250
pF
Small−Signal Current Gain
(I
C
= 0.5 Adc, V
CE
= 4.0 Vdc, f = 50 kHz)
h
fe
20 −
−
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Indicates JEDEC Registered Data.
3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
4. f
T
= |h
fe
| • f
test
2N6107, 2N6109, 2N6111 (PNP), 2N6288, 2N6292 (NPN)
http://onsemi.com
3
40
0
0 20 40 60 80 100 120 160
Figure 1. Power Derating
T
C
, CASE TEMPERATURE (°C)
P
D
, POWER DISSIPATION (WATTS)
20
30
140
10
Figure 2. Switching Time Test Circuit
+11 V
25 ms
0
-9.0 V
R
B
-4 V
D
1
SCOPE
V
CC
+30 V
R
C
t
r
, t
f
≤ 10 ns
DUTY CYCLE = 1.0%
51
D1 MUST BE FAST RECOVERY TYPE, eg:
1N5825 USED ABOVE I
B
≈ 100 mA
MSD6100 USED BELOW I
B
≈ 100 mA
R
B
and R
C
ARE VARIED TO OBTAIN DESIRED CURRENT LEVELS
2.0
0.07
Figure 3. Turn−On Time
I
C
, COLLECTOR CURRENT (AMP)
1.0
0.7
0.5
0.3
0.2
0.1
0.02
0.1 0.2 0.3 0.5 2.0 3.0 7.0
T
J
= 25°C
V
CC
= 30 V
I
C
/I
B
= 10
0.05
t, TIME (s)μ
t
r
1.0 5.0
t
d
@ V
BE(off)
≈ 5.0 V
0.07
0.03
Figure 4. Thermal Response
t, TIME (ms)
1.0
0.01
0.01
0.5
0.2
0.1
0.05
0.02
r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)
0.05 1.0 2.0 5.0 10 20 50 100 200 1.0 k500
Z
q
JC(t)
= r(t) R
q
JC
R
q
JC
= 3.125°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(pk)
- T
C
= P
(pk)
Z
q
JC
(t)
P
(pk)
t
1
t
2
DUTY CYCLE, D = t
1
/t
2
D = 0.5
0.2
0.05
0.02
0.01
SINGLE PULSE
0.1
0.7
0.3
0.07
0.03
0.02 0.1 0.50.2
P1-P3P4-P5

2N6288G

Mfr. #:
Buy 2N6288G
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - BJT 7A 30V 40W NPN
Lifecycle:
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