© Semiconductor Components Industries, LLC, 2015
March, 2015 − Rev. 2
1 Publication Order Number:
MMBT5401W/D
MMBT5401W
High Voltage Transistor
PNP Silicon
Features
• NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage V
CEO
−150 Vdc
Collector−Base Voltage V
CBO
−160 Vdc
Emitter−Base Voltage V
EBO
−5.0 Vdc
Collector Current − Continuous I
C
−500 mAdc
Stresses exceeding those listed in the Maximum Ratings table may damage
the device. If any of these limits are exceeded, device functionality should not
be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation
FR−5 Board (Note 2)
T
A
= 25°C
Derate Above 25°C
P
D
400
3.2
mW
mW/°C
Thermal Resistance,
Junction−to−Ambient
R
q
JA
312 °C/W
Junction and Storage Temperature T
J
, T
stg
−55 to +150 °C
1. FR−5 @ 100 mm
2
, 0.5 oz. copper traces, still air.
2. FR−5 = 1.0 0.75 0.062 in.
Device
Package
Shipping
†
ORDERING INFORMATION
SC−70 (SOT−323)
CASE 419
STYLE 3
MARKING DIAGRAM
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
MMBT5401WT1G,
NSVMMBT5401WT1G
SC−70
(Pb−Free)
3000 / Tape &
Reel
www.onsemi.com
COLLECTOR
3
1
BASE
2
EMITTER
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
4W = Specific Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
4W MG
G
1