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IRF540L

P1-P3P4-P6P7-P9
Document Number: 91021 www.vishay.com
S11-0510-Rev. B, 21-Mar-11 1
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Power MOSFET
IRF540, SiHF540
Vishay Siliconix
FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• 175 °C Operating Temperature
•Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-220AB package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220AB contribute to its
wide acceptance throughout the industry.
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
DD
= 25 V, starting T
J
= 25 °C, L = 440 μH, R
g
= 25 , I
AS
= 28 A (see fig. 12).
c. I
SD
28 A, dI/dt 170 A/μs, V
DD
V
DS
, T
J
175 °C.
d. 1.6 mm from case.
PRODUCT SUMMARY
V
DS
(V) 100
R
DS(on)
()V
GS
= 10 V 0.077
Q
g
(Max.) (nC) 72
Q
gs
(nC) 11
Q
gd
(nC) 32
Configuration Single
N-Channel MOSFET
G
D
S
TO-220AB
G
D
S
Available
RoHS*
COMPLIANT
ORDERING INFORMATION
Package TO-220AB
Lead (Pb)-free
IRF540PbF
SiHF540-E3
SnPb
IRF540
SiHF540
ABSOLUTE MAXIMUM RATINGS (T
C
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
DS
100
V
Gate-Source Voltage V
GS
± 20
Continuous Drain Current V
GS
at 10 V
T
C
= 25 °C
I
D
28
AT
C
= 100 °C 20
Pulsed Drain Current
a
I
DM
110
Linear Derating Factor 1.0 W/°C
Single Pulse Avalanche Energy
b
E
AS
230 mJ
Repetitive Avalanche Current
a
I
AR
28 A
Repetitive Avalanche Energy
a
E
AR
15 mJ
Maximum Power Dissipation T
C
= 25 °C P
D
150 W
Peak Diode Recovery dV/dt
c
dV/dt 5.5 V/ns
Operating Junction and Storage Temperature Range T
J
, T
stg
- 55 to + 175
°C
Soldering Recommendations (Peak Temperature) for 10 s 300
d
Mounting Torque 6-32 or M3 screw
10 lbf · in
1.1 N · m
* Pb containing terminations are not RoHS compliant, exemptions may apply
www.vishay.com Document Number: 91021
2 S11-0510-Rev. B, 21-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRF540, SiHF540
Vishay Siliconix
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 μs; duty cycle 2 %.
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL TYP. MAX. UNIT
Maximum Junction-to-Ambient R
thJA
-62
°C/WCase-to-Sink, Flat, Greased Surface R
thCS
0.50 -
Maximum Junction-to-Case (Drain) R
thJC
-1.0
SPECIFICATIONS (T
J
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage V
DS
V
GS
= 0 V, I
D
= 250 μA 100 - -
V
V
DS
Temperature Coefficient V
DS
/T
J
Reference to 25 °C, I
D
= 1 mA - 0.13 -
V/°C
Gate-Source Threshold Voltage V
GS(th)
V
DS
= V
GS
, I
D
= 250 μA 2.0 -
4.0 V
Gate-Source Leakage I
GSS
V
GS
= ± 20 V - -
± 100 nA
Zero Gate Voltage Drain Current I
DSS
V
DS
= 100 V, V
GS
= 0 V - -
25
μA
V
DS
= 80 V, V
GS
= 0 V, T
J
= 150 °C - -
250
Drain-Source On-State Resistance R
DS(on)
V
GS
= 10 V I
D
= 17 A
b
--
0.077
Forward Transconductance g
fs
V
DS
= 50 V, I
D
= 17 A
b
8.7 - -
S
Dynamic
Input Capacitance C
iss
V
GS
= 0 V,
V
DS
= 25 V,
f = 1.0 MHz, see fig. 5
- 1700 -
pFOutput Capacitance C
oss
- 560 -
Reverse Transfer Capacitance C
rss
- 120 -
Total Gate Charge Q
g
V
GS
= 10 V
I
D
= 17 A, V
DS
= 80 V,
see fig. 6 and 13
b
--72
nC Gate-Source Charge Q
gs
--11
Gate-Drain Charge Q
gd
--32
Turn-On Delay Time t
d(on)
V
DD
= 50 V, I
D
= 17 A
R
g
= 9.1 , R
D
= 2.9, see fig. 10
b
-11-
ns
Rise Time t
r
-44-
Turn-Off Delay Time t
d(off)
-53-
Fall Time t
f
-43-
Internal Drain Inductance L
D
Between lead,
6 mm (0.25") from
package and center of
die contact
-4.5-
nH
Internal Source Inductance L
S
-7.5-
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current I
S
MOSFET symbol
showing the
integral reverse
p - n junction diode
--28
A
Pulsed Diode Forward Current
a
I
SM
- - 110
Body Diode Voltage V
SD
T
J
= 25 °C, I
S
= 28 A, V
GS
= 0 V
b
--
2.5 V
Body Diode Reverse Recovery Time t
rr
T
J
= 25 °C, I
F
= 17 A, dI/dt = 100 A/μs
b
-
180 360 ns
Body Diode Reverse Recovery Charge Q
rr
-
1.3 2.8 μC
Forward Turn-On Time t
on
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
and L
D
)
D
S
G
S
D
G
Document Number: 91021 www.vishay.com
S11-0510-Rev. B, 21-Mar-11 3
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRF540, SiHF540
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Fig. 1 - Typical Output Characteristics, T
C
= 25 °C
Fig. 2 - Typical Output Characteristics, T
C
= 175 °C
Fig. 3 - Typical Transfer Characteristics
Fig. 4 - Normalized On-Resistance vs. Temperature
91021_01
Bottom
To p
V
GS
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
4.5 V
20 µs Pulse Width
T
C
= 25 °C
4.5 V
V
DS
, Drain-to-Source Voltage (V)
I
D
, Drain Current (A)
10
0
10
1
10
2
10
1
10
-1
V
DS
,
Drain-to-Source Voltage (V)
I
D
, Drain Current (A)
4.5 V
Bottom
To p
V
GS
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
4.5 V
20 µs Pulse Width
T
C
= 175 °C
91021_02
10
0
10
1
10
2
10
1
10
-1
20 µs Pulse Width
V
DS
= 50 V
10
2
10
1
I
D
, Drain Current (A)
V
GS
,
Gate-to-Source Voltage (V)
56 78910
4
25 °C
175 °C
91021_03
P1-P3P4-P6P7-P9

IRF540L

Mfr. #:
Buy IRF540L
Manufacturer:
Vishay
Description:
MOSFET N-CH 100V 28A TO-262
Lifecycle:
New from this manufacturer.
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