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FCX688BTA

P1-P3
SOT89 NPN SILICON POWER
(SWITCHING) TRANSISTOR
ISSSUE 1 - NOVEMBER 1998
FEATURES
* 2W POWER DISSIPATION
* 10A Peak Pulse Current
* Excellent H
FE
Characteristics up to 10 Amps
* Extremely Low Saturation Voltage
Complimentary Type - FCX789A
Partmarking Detail - 688
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
CBO
12 V
Collector-Emitter Voltage V
CEO
12 V
Emitter-Base Voltage V
EBO
5V
Peak Pulse Current ** I
CM
10 A
Continuous Collector Current I
C
3A
Power Dissipation at T
amb
=25°C P
tot
1 †
2 ‡
W
W
Operating and Storage Temperature Range T
j
:T
stg
-55 to +150 °C
† recommended P
tot
calculated using FR4 measuring 15x15x0.6mm
‡ Maximum power dissipation is calculated assuming that the device is mounted on FR4
substrate measuring 40x40x0.6mm and using comparable measurement methods adopted by
other suppliers.
**Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
Spice parameter data is available upon request for these devices
Refer to the handling instructions for soldering surface mount components.
C
B
C
E
FCX688B
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C)
PARAMETER SYMBOL Min Typ Max UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
12 V
I
C
=100µA
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
12 V I
C
=10mA*
Emitter-Base
Breakdown Voltage
V
(BR)EBO
5V
I
E
=100µA
Collector Cut-Off Current I
CBO
0.1
µA
V
CB
=9V
Emitter Cut-Off Current I
EBO
0.1
µA
V
EB
=4V
Collector-Emitter
Saturation Voltage
V
CE(sat)
40
60
180
350
400
mV
mV
mV
mV
mV
I
C
=0.1A, I
B
=1mA *
I
C
=0.1A, I
B
=0.5mA *
I
C
=1A, I
B
=10mA *
I
C
=3A, I
B
=10mA *
I
C
=4A, I
B
=50mA *
Base-Emitter
Saturation Voltage
V
BE(sat)
1.1 V
I
C
=3A, I
B
=20mA *
Base-Emitter
Turn-On Voltage
V
BE(on)
1.0 V IC=3A, V
CE
=2V *
Static Forward Current
Transfer
Ratio
h
FE
500
400
100
I
C
=100mA, V
CE
=2V*
I
C
=3A, V
CE
=2V*
I
C
=10A, V
CE
=2V*
Transition Frequency f
T
150 MHz I
C
=50mA, V
CE
=5V
f=50MHz
Input Capacitance C
ibo
200 pF V
EB
=0.5V, f=1MHz
Output Capacitance C
obo
40 pF V
CB
=10V, f=1MHz
Switching Times t
on
t
off
40
500
ns
ns
I
C
=500mA, I
B1
=I
B2
=50mA
V
CC
=10V
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
FCX688B
-55°C
+25°C
+100°C
+175°C
+100°C
+25°C
-55°C
0.01 0.1 1 10
0.4
0.2
0
0.8
0.6
0.01 0.1 1 10
0.4
0.2
0
0.8
0.6
0.01 0.1 1 10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
0.01 0.1 1 10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
0.01 0.1
1
10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
TYPICAL CHARACTERISTICSTYPICAL CHARACTERISTICS
V V
CE(sat)CE(sat)
v Iv I
CC
IC -
Collector Current (Amps)
V V
CE(sat)CE(sat)
v Iv I
CC
IC -
Collector Current (Amps)
IC -
Collector Current (Amps)
IC -
Collector Current (Amps)
hh
FEFE
v Iv I
CC
VV
BE(sat)BE(sat)
v Iv I
CC
IC - Collector Current (Amps)
VV
BE(on)BE(on)
v Iv I
CC
VCE=2V
VCE=2V
1.5K
1K
500
VCE - Collector Voltage (Volts)
Safe Operating Area Safe Operating Area
-55°C
+25°C
+100°C
+175°C
IC/IB=100
Tamb=25°C
IC/IB=10
IC/IB=200
IC/IB=100
IC/IB=100
-55°C
+25°C
+100°C
+175°C
0
0
100m 10 100
1s
100ms
10
1
DC
0.01
10ms
1ms
100us
1
0.1
FCX688B
P1-P3

FCX688BTA

Mfr. #:
Buy FCX688BTA
Manufacturer:
Diodes Incorporated
Description:
Bipolar Transistors - BJT NPN High Gain
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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