IPB180N10S402ATMA1

P1-P3 P4-P6 P7-P9

IPB180N10S4-02

OptiMOS

TM

-T2 Power-Transistor

Features

• N-channel - Enhancement mode

• AEC qualified

• MSL1 up to 260°C peak reflow

• 175°C operating temperature

• Green product (RoHS compliant)

• 100% Avalanche tested

Maximum ratings, at T

j

=25 °C, unless otherwise specified

Parameter Symbol Conditions Unit

Continuous drain current

I

D

T

C

=25°C, V

GS

=10V

1)

180 A

T

C

=100°C, V

GS

=10V

2)

171

Pulsed drain current

2)

I

D,pulse

T

C

=25°C

720

Avalanche energy, single pulse

2)

E

AS

I

D

=90A

1110 mJ

Avalanche current, single pulse

I

AS

-

180 A

Gate source voltage

V

GS

-±20V

Power dissipation

P

tot

T

C

=25°C

300 W

Operating and storage temperature

T

j

, T

stg

- -55 ... +175 °C

IEC climatic category; DIN IEC 68-1 - - 55/175/56

Value

V

DS

100 V

R

DS(on)

2.5

mΩ

I

D

180 A

Product Summary

PG-TO263-7-3

Type Package Marking

IPB180N10S4-02 PG-TO263-7-3 4N1002

R

ev. 1.0 page 1 2013-01-30

IPB180N10S4-02

Parameter Symbol Conditions Unit

min. typ. max.

Thermal characteristics

2)

Thermal resistance, junction - case

R

thJC

---0.5K/W

SMD version, device on PCB

R

thJA

minimal footprint - - 62

6cm

2

cooling area

3)

--40

Electrical characteristics, at T

j

=25 °C, unless otherwise specified

Static characteristics

Drain-source breakdown voltage

V

(BR)DSS

V

GS

=0V, I

D

= 1mA

100 - - V

Gate threshold voltage

V

GS(th)

V

DS

=V

GS

, I

D

=275µA

2.0 2.7 3.5

Zero gate voltage drain current

I

DSS

V

DS

=100V, V

GS

=0V,

T

j

=25°C

-0.11µA

V

DS

=100V, V

GS

=0V,

T

j

=125°C

2)

- 10 100

Gate-source leakage current

I

GSS

V

GS

=20V, V

DS

=0V

- - 100 nA

Drain-source on-state resistance

R

DS(on)

V

GS

=10V, I

D

=100A

-2.02.5mΩ

Values

R

ev. 1.0 page 2 2013-01-30

IPB180N10S4-02

Parameter Symbol Conditions Unit

min. typ. max.

D

y

namic characteristics

2)

Input capacitance

C

iss

- 11240 14600 pF

Output capacitance

C

oss

- 3660 4760

Reverse transfer capacitance

C

rss

- 230 460

Turn-on delay time

t

d(on)

-15-ns

Rise time

t

r

-9-

Turn-off delay time

t

d(off)

-30-

Fall time

t

f

-40-

Gate Char

g

e Characteristics

2)

Gate to source charge

Q

gs

-5268nC

Gate to drain charge

Q

gd

-3060

Gate charge total

Q

g

- 156 200

Gate plateau voltage

V

plateau

-4.7-V

Reverse Diode

Diode continous forward current

2)

I

S

- - 180 A

Diode pulse current

2)

I

S,pulse

- - 720

Diode forward voltage

V

SD

V

GS

=0V, I

F

=100A,

T

j

=25°C

-1.01.2V

Reverse recovery time

2)

t

rr

- 100 - ns

Reverse recovery charge

2)

Q

rr

- 230 - nC

Values

V

GS

=0V, V

DS

=25V,

f=1MHz

V

DD

=50V, V

GS

=10V,

I

D

=180A, R

G

=1.6Ω

V

DD

=80V, I

D

=180A,

V

GS

=0 to 10V

2)

Defined by design. Not subject to production test.

3)

Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm

2

(one layer, 70 µm thick) copper area for drain

connection. PCB is vertical in still air.

1)

Current is limited by bondwire; with an R

thJC

= 0.5K/W the chip is able to carry 242A at 25°C.

V

R

=50V, I

F

=50A,

di

F

/dt=100A/µs

T

C

=25°C

R

ev. 1.0 page 3 2013-01-30

P1-P3 P4-P6 P7-P9

IPB180N10S402ATMA1

Mfr. #:

Buy IPB180N10S402ATMA1

Manufacturer:

Infineon Technologies

Description:

MOSFET N-Ch 100V 180A D2PAK-6

Lifecycle:

New from this manufacturer.

Delivery:

DHL FedEx Ups TNT EMS

Payment:

T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet

IPB180N10S402ATMA1