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SI5511DC-T1-E3

P1-P3P4-P6P7-P9P10-P12
Document Number: 73787
S10-0547-Rev. C, 08-Mar-10
www.vishay.com
7
Vishay Siliconix
Si5511DC
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Normalized Thermal Transient Impedance, Junction-to-Ambient
10
-3
10
-2
1 10 600 10
-1
10
-4
100
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
e v i t c e
f
f
E d e z i l a m r o N t n e i s n a r T
e c n a d e p m I l a m r e h T
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 90 °C/W
3. T
JM
- T
A
= P
DM
Z
thJA
(t)
t
1
t
2
t
1
t
2
Notes:
4. Surface Mounted
P
DM
Normalized Thermal Transient Impedance, Junction-to-Foot
10
-3
10
-2
1 10 10
-1
10
-4
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
e
v i
t
c e
f
f E
d e z i
l a
m
r o N t
n e i s n a r T
e c n a d e p m I
l a
m
r e h
T
www.vishay.com
8
Document Number: 73787
S10-0547-Rev. C, 08-Mar-10
Vishay Siliconix
Si5511DC
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Output Characteristics
On-Resistance vs. Drain Current and Gate Voltage
Gate Charge
0
2
4
6
8
10
0.0 0.6 1.2 1.8 2.4 3.0
V
DS
- Drain-to-Source Voltage (V)
)A( tnerruC niarD -I
D
V
GS
= 1.5 V
V
GS
= 2 V
V
GS
= 3 V
V
GS
= 5 V thru 3.5 V
V
GS
= 2.5 V
0.0
0.1
0.2
0.3
0.4
0
.5
02468 10
V
GS
= 2.5 V
I
D
- Drain Current (A)
V
GS
= 4.5 V
R
)
no(SD
(Ω ecnatsiseR-nO
-
)
0
1
2
3
4
5
012345
I
D
= 2.3 A
)
V
(
ega
tlo
V
e
c
ruoS
-o
t-
eta
G
-
Q
g
- Total Gate Charge (nC)
V
SG
V
GS
= 15 V
V
GS
= 24 V
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
0
1
2
3
4
5
0.0 0.6 1.2 1.8 2.4
V
GS
- Gate-to-Source Voltage (V)
)A( tnerruC niarD -I
D
T
A
= 125 °C
T
A
= - 55 °C
T
A
= 25 °C
C
rss
0
100
200
300
400
5
00
0 5 10 15 20 25 30
V
DS
- Drain-to-Source Voltage (V)
)Fp( ecn
a
tica
p
aC
-
C
C
iss
C
oss
0.6
0.8
1.0
1.2
1.4
1.6
1
.
8
- 50 - 25 0 25 50 75 100 125 150
V
GS
= 4.5 V,
I
D
= 2.3 A
T
J
- Junction Temperature (°C)
R
)
n
o
(
S D
ecn
a
tsi
s
eR-nO -
)dezilamroN
(
V
GS
= 2.5 V,
I
D
= 1.8 A
Document Number: 73787
S10-0547-Rev. C, 08-Mar-10
www.vishay.com
9
Vishay Siliconix
Si5511DC
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Source-Drain Diode Forward Voltage
Threshold Voltage
0.0 0.2 0.4 0.6 0.8 1.0 1.2
0.001
V
SD
- Source-to-Drain Voltage (V)
)A( tnerruC ecruoS -I
S
0.1
0.01
1
10
20
T
J
= 150 °C
T
J
= 25 °C
0.7
0.
8
0.9
1.0
1.1
1.2
1
.
3
- 50 - 25 0 25 50 75 100 125 150
I
D
= 250 µA
T
J
- Temperature (°C)
V
) h t (
S
G
) V
(
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power
T
A
= 25 °C
I
D
= 2.3 A
0.00
0.08
0.16
0.24
0.32
0
.
40
12345
V
GS
- Gate-to-Source Voltage (V)
R
)no(SD
(Ω e c n a t s i s e R - n O e c r u o S - o t - n i a r D -)
T
A
= 125 °C
0
30
50
10
20
)W(
r
e
woP
Time (s)
40
10 10
-1
10
-2
10
-4
10
-3
1 10
2
10
3
Safe Operating Area, Junction-to-Case
100
1
0.1 1 10 100
0.01
10
)
A
( tnerruC niarD
-
I
D
0.1
Limited by R
DS(on)
*
T
A
= 25 °C
Single Pulse
10 ms
100 ms
DC
1 s
10 s
V
DS
- Drain-to-Source Voltage (V)
* V
GS
minimum V
GS
at which R
DS(on)
is specified
0.001
P1-P3P4-P6P7-P9P10-P12

SI5511DC-T1-E3

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Vishay
Description:
MOSFET N/P-CH 30V 4A 1206-8
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