ZXMN6A25N8TA

P1-P3 P4-P6 P7-P8

ZXMN6A25N8

Issue 1 - April 2008 4

© Zetex Semiconductors plc 2008

www.zetex.com

Electrical characteristics (at T

amb

= 25°C unless otherwise stated)

Parameter Symbol Min. Typ. Max. Unit Conditions

Static

Drain-Source breakdown

voltage

V

(BR)DSS

60 V

I

D

=250μA, V

GS

=0V

Zero gate voltage drain

current

I

DSS

1.0 µA

V

DS

=60V, V

GS

=0V

Gate-Body leakage

I

GSS

100 nA

V

GS

=±20V, V

DS

=0V

Gate-Source threshold

voltage

V

GS(th)

1 3 V

I

D

=250μA, V

DS

=V

GS

Static Drain-Source

on-state resistance

(

*

)

R

DS(on)

0.050

0.070

Ω

V

GS

= 10V, I

D

= 3.6A

V

GS

= 4.5V, I

D

= 3.0A

Forward

Transconductance

(

*

) (†)

g

fs

10.2

S

V

DS

= 15V, I

D

= 4.5A

Dynamic

(†)

Input capacitance

C

iss

1063

pF

Output capacitance

C

oss

104

pF

Reverse transfer

capacitance

C

rss

64

pF

V

DS

= 30V, V

GS

=0V

f=1MHz

Switching

(‡) (†)

Turn-on-delay time

t

d(on)

3.8

ns

Rise time

t

r

4.0

ns

Turn-off delay time

t

d(off)

26.2

ns

Fall time

t

f

10.6

ns

V

DD

= 30V, V

GS

= 10V

I

D

= 1A

R

G

≅ 6.0Ω,

Gate charge

Q

g

11.0

nC

V

DS

= 30V, V

GS

= 5V

I

D

= 4.5A

Total gate charge

Q

g

20.4

nC

Gate-Source charge

Q

gs

4.1

nC

Gate-Drain charge

Q

gd

5.1

nC

V

DS

= 30V, V

GS

= 10V

I

D

= 4.5A

Source–Drain diode

Diode forward voltage

(

*

)

V

SD

0.85 0.95

V

I

S

= 5.5A,V

GS

=0V

Reverse recovery time

(‡)

t

rr

22.0

ns

Reverse recovery charge

(‡)

Q

rr

21.4

nC

I

S

= 2.2A,di/dt=100A/μs

NOTES:

(*) Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2%.

(†)Switching characteristics are independent of operating junction temperature.

(‡)For design aid only, not subject to production testing

ZXMN6A25N8

Issue 1 - April 2008 5

© Zetex Semiconductors plc 2008

www.zetex.com

Typical characteristics

0.1 1 10

0.01

0.1

1

10

0.1 1 10

0.01

0.1

1

10

2345

0.01

0.1

1

10

-50 0 50 100 150

0.4

0.6

0.8

1.0

1.2

1.4

0.01 0.1 1 10

0.01

0.1

1

10

100

1000

0.2 0.4 0.6 0.8 1.0 1.2

0.01

0.1

1

10

100

4.5V

10V

4V

3.5V

V

GS

2.5V

3V

Output Characteristics

T = 25°C

V

GS

I

D

Drain Current (A)

V

DS

Drain-Source Voltage (V)

4V

3.5V

3V

2V

4.5V

10V

2.5V

Output Characteristics

T = 150°C

I

D

Drain Current (A)

V

DS

Drain-Source Voltage (V)

Typical Transfer Characteristics

V

DS

= 10V

T = 25°C

T = 150°C

I

D

Drain Current (A)

V

GS

Gate-Source Voltage (V)

Normalised Curves v Temperature

R

DS(on)

V

GS

= 10V

I

D

= 4.5A

V

GS( th)

V

GS

= V

DS

I

D

= 250uA

Normalised R

DS(on)

and V

GS(th)

Tj Junction Temperature (°C)

4.5V

10V

3V

4V

3.5V

2.5V

On-Resistance v Drain Current

T = 25°C

V

GS

R

DS(on)

Drain-Source On-Resistance (Ω)

I

D

Drain Current (A)

T = 150°C

T = 25°C

Source-Drain Diode Forward Voltage

V

SD

Source-Drain Voltage (V)

I

SD

Reverse Drain Current (A)

ZXMN6A25N8

Issue 1 - April 2008 6

© Zetex Semiconductors plc 2008

www.zetex.com

Typical characteristics

0.1 1 10

0

200

400

600

800

1000

1200

1400

1600

C

RSS

C

OSS

C

ISS

V

GS

= 0V

f = 1MHz

C Capacitance (pF)

V

DS

- Drain - Source Voltage (V)

0 5 10 15 20 25

0

2

4

6

8

10

I

D

= 4.5A

V

DS

= 30V

Gate-Source Voltage v Gate Charge

Capacitance v Drain-Source Voltage

Q - Charge (nC)

V

GS

Gate-Source Voltage (V)

Test circuits

P1-P3 P4-P6 P7-P8

ZXMN6A25N8TA

Mfr. #:

Buy ZXMN6A25N8TA

Manufacturer:

Diodes Incorporated

Description:

MOSFET N-CHANNEL 60V

Lifecycle:

New from this manufacturer.

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ZXMN6A25N8TA