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6116LA90TDB

P1-P3P4-P6P7-P9P10-P11
©2013 Integrated Device Technology, Inc.
FEBRUARY 2013
DSC-3089/08
1
Features
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High-speed access and chip select times
– Military: 20/25/35/45/55/70/90/120/150ns (max.)
– Industrial: 20/25ns (max.)
– Commercial: 15/20/25ns (max.)
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Low-power consumption
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Battery backup operation
– 2V data retention voltage (LA version only)
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Produced with advanced CMOS high-performance
technology
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CMOS process virtually eliminates alpha particle soft-error
rates
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Input and output directly TTL-compatible
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Static operation: no clocks or refresh required
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Available in ceramic 24-pin DIP, ceramic and plastic 24-pin Thin
Dip and 24-pin SOIC
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Military product compliant to MIL-STD-833, Class B
Description
The IDT6116SA/LA is a 16,384-bit high-speed static RAM organized
as 2K x 8. It is fabricated using high-performance, high-reliability CMOS
technology.
Access times as fast as 15ns are available. The circuit also offers a
reduced power standby mode. When CS goes HIGH, the circuit will
automatically go to, and remain in, a standby power mode, as long as CS
remains HIGH. This capability provides significant system level power and
cooling savings. The low-power (LA) version also offers a battery backup
data retention capability where the circuit typically consumes only 1µW to
4µW operating off a 2V battery.
All inputs and outputs of the IDT6116SA/LA are TTL-compatible. Fully
static asynchronous circuitry is used, requiring no clocks or refreshing for
operation.
The IDT6116SA/LA is packaged in 24-pin 300mil plastic DIP, 24-pin
600mil and 300mil ceramic DIP, or 24-lead gull-wing SOIC providing high
board-level packing densities.
Military grade product is manufactured in compliance to MIL-STD-883,
Class B, making it ideally suited to military temperature applications
demanding the highest level of performance and reliability.
Functional Block Diagram
CS
A
0
A
10
I/O
0
I/O
7
OE
WE
128 X 128
MEMORY
ARRAY
I/O CONTROL
ADDRESS
DECODER
INPUT
DATA
CIRCUIT
CONTROL
CIRCUIT
GND
3089 drw 01
V
CC
,
CMOS Static RAM
16K (2K x 8-Bit)
IDT6116SA
IDT6116LA
2
IDT6116SA/LA
CMOS Static RAM 2K (16K x 8-Bit) Military, Commercial, and Industrial Temperature Ranges
Pin Configurations
Absolute Maximum Ratings
(1)
Truth Table
(1)
Pin Description
Capacitance
(TA = +25°C, f = 1.0 MHZ)
DIP/SOIC
Top View
NOTE:
1. This parameter is determined by device characterization, but is not production
tested.
Symbol Parameter
(1)
Conditions Max. Unit
C
IN
Input Capacitance V
IN
= 0V 8 pF
C
I/O
I/O Capacitance V
OUT
= 0V 8 pF
3089 tbl 03
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS
may cause permanent damage to the device. This is a stress rating only and
functional operation of the device at these or any other conditions above those
indicated in the operational sections of this specification is not implied. Exposure
to absolute maximum rating conditions for extended periods may affect
reliability.
2. VTERM must not exceed VCC +0.5V.
Symbol Rating Com'l. Mil. Unit
V
TERM
(2)
Terminal Voltage
with Respect
to GND
-0.5 to +7.0 -0.5 to +7.0 V
T
A
Operating
Temperature
0 to +70 -55 to +125
o
C
T
BIAS
Temperature
Under Bias
-55 to +125 -65 to +135
o
C
T
STG
Storage Temperature -55 to +125 -65 to +150
o
C
P
T
Power Dissipation 1.0 1.0 W
I
OUT
DC Output Current 50 50 mA
3089 tbl 04
Name Description
A
0
- A
10
Address Inputs
I/O
0
- I/O
7
Data Input/Output
CS
Chip Select
WE
Write Enable
OE
Output Enable
V
CC
Power
GND Ground
3089 tbl 01
NOTE:
1. H = VIH, L = VIL, X = Don't Care.
Mode
CS OE WE
I/O
Standby H X X High-Z
Read L L H DATA
OUT
Read L H H High-Z
Write L X L DATA
IN
3089 tbl 02
3089 drw 02
5
6
7
8
9
10
11
12
GND
1
2
3
4
24
23
22
21
20
19
18
17
P24-1
D24-2
D24-1
SO24-2
A
5
A
4
A
3
A
2
A
1
A
0
I/O
0
I/O
1
V
CC
A
9
WE
A
10
I/O
5
I/O
4
OE
16
15
14
13
A
7
A
6
I/O
7
I/O
6
CS
A
8
I/O
2
I/O
3
6.42
IDT6116SA/LA
CMOS Static RAM 2K (16K x 8-Bit) Military, Commercial, and Industrial Temperature Ranges
3
NOTES:
1. All values are maximum guaranteed values.
2. fMAX = 1/tRC, only address inputs are cycling at fMAX, f = 0 means address inputs are not changing.
DC Electrical Characteristics
(1)
(VCC = 5.0V ± 10%, VLC = 0.2V, VHC = VCC - 0.2V)
DC Electrical Characteristics
(VCC = 5.0V ± 10%)
Recommended Operating
Temperature and Supply Voltage
Recommended DC
Operating Conditions
NOTES:
1. V
IL (min.) = –3.0V for pulse width less than 20ns, once per cycle.
2. V
IN must not exceed VCC +0.5V.
Grade
Ambient
Temperature GND Vcc
Military -55
O
C to +125
O
C0V 5.0V ± 10%
Industrial -40
O
C to +85
O
C0V 5.0V ± 10%
Commercial 0
O
C to +70
O
C0V 5.0V ± 10%
3089 tbl 05
Symbol Parameter Min. Typ. Max. Unit
V
CC
Supply Voltage 4.5 5.0 5.5
(2)
V
GND Ground 0 0 0 V
V
IH
Input High Voltage 2.2 3.5 V
CC
+0.5 V
V
IL
Input Low Voltage -0.5
(1 )
____
0.8 V
3089 tbl 06
Symbol Parameter Test Conditions
IDT6116SA IDT6116LA
UnitMin. Max. Min. Max.
|I
LI
|
Input Leakage Current
V
CC
= Max.,
V
IN
=
GND to V
CC
MIL.
COM'L & IND
____
____
10
5
____
____
5
2
µA
|I
LO
| Output Leakage Current V
CC
= Max., CS = V
IH
,
V
OUT
= GND to V
CC
MIL.
COM'L & IND
____
____
10
5
____
____
5
2
µA
V
OL
Output Low Voltage I
OL
= 8mA, V
CC
= Min.
____
0.4
____
0.4 V
V
OH
Output High Voltage I
OH
= -4mA, V
CC
= Min. 2.4
____
2.4
____
V
3089 tbl 07
123Symbol Parameter Power
6116SA15
6116SA20
6116LA20
6116SA25
6116LA25
Unit
Com'l
Only
Com'l
& Ind
Mil
Com'l
& Ind
Mil
I
CC1
Operating Power Supply Current
CS <
V
IL
, Outputs Open
V
CC
= Max., f
=
0
SA 105 105 130 100 90
mA
LA
_____
95 120 95 85
I
CC2
Dynamic Operating Current
CS <
V
IL
, Outputs Open
V
CC
= Max., f = f
MAX
(2)
SA 150 130 150 120 135
mA
LA
_____
120 140 110 125
I
SB
Standby Power Supply Current
(TTL Level)
CS >
V
IH
, Outputs Open
V
CC
= Max., f = f
MAX
(2)
SA 40 40 50 40 45
mA
LA
_____
35 45 35 40
I
SB1
Full Standby Power Supply Current
(CMOS Level)
CS >
V
HC
, V
CC
= Max.,
V
IN
< V
LC
or V
IN
> V
HC
, f = 0
SA 2 2 10 2 10
mA
LA
_____
0.1 0.9 0.1 0.9
3089 tbl 08
P1-P3P4-P6P7-P9P10-P11

6116LA90TDB

Mfr. #:
Buy 6116LA90TDB
Manufacturer:
IDT
Description:
SRAM 16K Asynch. 2Kx8 HS, L-Pwr, SRAM
Lifecycle:
New from this manufacturer.
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