SSM3J351R
3
5.
5.
5.
5. Electrical Characteristics
Electrical Characteristics
Electrical Characteristics
Electrical Characteristics
5.1.
5.1.
5.1.
5.1. Static Characteristics (Unless otherwise specified, T
Static Characteristics (Unless otherwise specified, T
Static Characteristics (Unless otherwise specified, T
Static Characteristics (Unless otherwise specified, T
a
a
a
a
= 25
= 25
= 25
= 25
)
)
)
)
Characteristics
Gate leakage current
Drain cut-off current
Drain-source breakdown voltage
Drain-source breakdown voltage
Gate threshold voltage
Drain-source on-resistance
Forward transfer admittance
(Note 1)
(Note 2)
(Note 2)
Symbol
I
GSS
I
DSS
V
(BR)DSS
V
(BR)DSX
V
th
R
DS(ON)
|Y
fs
|
Test Condition
V
DS
= 0 V, V
GS
= -16 V/+10 V
V
DS
= -60 V, V
GS
= 0 V
I
D
= -1 mA, V
GS
= 0 V
I
D
= -1 mA, V
GS
= 10 V
V
DS
= -10 V, I
D
= -1 mA
I
D
= -1.0 A, V
GS
= -4.0 V
I
D
= -1.0 A, V
GS
= -4.5 V
I
D
= -1.0 A, V
GS
= -10 V
V
DS
= -10 V, I
D
= -1.0 A
Min
-60
-50
-0.8
Typ.
129
122
107
6.4
Max
±10
-10
-2.0
184
164
134
Unit
µA
V
mΩ
S
Note 1: If a reverse bias is applied between gate and source, this device enters V
(BR)DSX
mode. Note that the drain-
source breakdown voltage is lowered in this mode.
Note 2: Pulse measurement.
5.2.
5.2.
5.2.
5.2. Dynamic Characteristics (Unless otherwise specified, T
Dynamic Characteristics (Unless otherwise specified, T
Dynamic Characteristics (Unless otherwise specified, T
Dynamic Characteristics (Unless otherwise specified, T
a
a
a
a
= 25
= 25
= 25
= 25
)
)
)
)
Characteristics
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time (turn-on time)
Switching time (turn-off time)
Symbol
C
iss
C
rss
C
oss
t
on
t
off
Test Condition
V
DS
= -10 V, V
GS
= 0 V,
f = 1 MHz
V
DD
= -30 V, I
D
= -1.0 A,
V
GS
= 0 to -4.5 V, R
G
= 10 Ω,
Duty ≤ 1 %, V
IN
: t
r
, t
f
< 5 ns,
Common source, See Chapter 5.3.
Min
Typ.
660
50
70
32
100
Max
Unit
pF
ns
5.3.
5.3.
5.3.
5.3. Switching Time Test Circuit
Switching Time Test Circuit
Switching Time Test Circuit
Switching Time Test Circuit
Fig.
Fig.
Fig.
Fig. 5.3.1
5.3.1
5.3.1
5.3.1 Switching Time Test Circuit
Switching Time Test Circuit
Switching Time Test Circuit
Switching Time Test Circuit Fig.
Fig.
Fig.
Fig. 5.3.2
5.3.2
5.3.2
5.3.2 Input Waveform/Output Waveform
Input Waveform/Output Waveform
Input Waveform/Output Waveform
Input Waveform/Output Waveform
5.4.
5.4.
5.4.
5.4. Gate Charge Characteristics (Unless otherwise specified, T
Gate Charge Characteristics (Unless otherwise specified, T
Gate Charge Characteristics (Unless otherwise specified, T
Gate Charge Characteristics (Unless otherwise specified, T
a
a
a
a
= 25
= 25
= 25
= 25
)
)
)
)
Characteristics
Total gate charge (gate-source plus gate-drain)
Gate-source charge 1
Gate-drain charge
Symbol
Q
g
Q
gs1
Q
gd
Test Condition
V
DD
= -48 V, I
D
= -3.5 A,
V
GS
= -10 V
Min
Typ.
15.1
0.6
3
Max
Unit
nC
2017-12-27
Rev.4.0
©2016-2017
Toshiba Electronic Devices & Storage Corporation