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VS-ST730C16L0

P1-P3P4-P6P7-P8
VS-ST730CL Series
www.vishay.com
Vishay Semiconductors
Revision: 15-Apr-14
4
Document Number: 94414
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
Fig. 3 - Current Ratings Characteristics
Fig. 4 - Current Ratings Characteristics
Fig. 5 - On-State Power Loss Characteristics
Fig. 6 - On-State Power Loss Characteristics
40
50
60
70
80
90
100
110
120
130
0 100200300400500600700
30°
60°
90°
120°
180°
Average On-state Current (A)
Conduction Angle
Maximum Allowable Heatsink Temperature (°C)
ST7 3 0 C . . L Se r i e s
(Single Side Cooled)
R (DC) = 0.073 K/ W
thJ-hs
20
30
40
50
60
70
80
90
100
110
120
130
020040060080010001200
DC
30°
60°
90°
120°
180°
Average On-state Current (A)
Conduc tion Period
Maximum Allowable Heatsink Temperature (°C)
ST730C..L Series
(Single Side Cooled)
R (DC) = 0.073 K/ W
thJ-hs
20
30
40
50
60
70
80
90
100
110
120
130
0 200 400 600 800 1000 1200 1400
30°
60°
90°
120°
180°
Conduction Angle
Maximum Allowable Heatsink Temperature (°C)
ST7 3 0 C . . L Se r i e s
(Double Side Cooled)
R (DC) = 0.031 K/ W
thJ-hs
20
30
40
50
60
70
80
90
100
110
120
130
0 400 800 1200 1600 2000 2400
DC
30°
60°
90°
120°
180°
Avera g e On-st a t e C urrent (A)
Conduction Period
Maximum Allowable Heatsink Temperat ure (°C)
ST7 3 0 C . . L Se r i e s
(Double Side Cooled)
R (DC) = 0.031 K/ W
thJ-hs
0
500
1000
1500
2000
2500
0 200 400 600 800 1000 1200 1400
180°
120°
90°
60°
30°
RM S Li m i t
Conduc tion Angle
Maximum Average On-state Power Loss (W)
Average On-state Current (A)
ST730C..L Series
T = 125°C
J
0
500
1000
1500
2000
2500
3000
3500
0 400 800 1200 1600 2000 2400
DC
180°
120°
90°
60°
30°
RM S Lim i t
Conduction Period
Maximum Average On-state Power Loss (W)
Average On-sta te Current (A)
ST730C..L Se ries
T = 1 2 5 ° C
J
VS-ST730CL Series
www.vishay.com
Vishay Semiconductors
Revision: 15-Apr-14
5
Document Number: 94414
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 7 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 8 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 9 - On-State Voltage Drop Characteristics
Fig. 10 - Thermal Impedance Z
thJ-hs
Characteristics
7000
8000
9000
10000
11000
12000
13000
14000
15000
16000
110100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Peak Ha lf Sine Wave On-st ate Current (A)
Initia l T = 125°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
J
ST7 3 0 C . . L Se r i e s
At Any Rated Load Condition And With
Rated V Applied Following Surge.
RRM
7000
8000
9000
10000
11000
12000
13000
14000
15000
16000
17000
18000
0.01 0.1 1
Pulse Train Duration (s)
Ve rsus Pulse Tra in Dura tio n. Control
Peak Half Sine Wave On-state Current (A)
Init ial T = 125°C
No Voltage Reapplied
Ra t e d V Re a p p l i e d
RRM
J
ST7 3 0 C . . L Se r i e s
Maximum Non Repetitive Surge Current
Of Conduction May Not Be Maintained.
100
1000
10000
0.5 1 1.5 2 2.5 3 3.5
T = 2 5 ° C
J
Instantaneous On-state Current (A)
Instantaneous On-state Voltage (V)
T = 125°C
J
ST7 3 0 C . . L Se r i e s
0.001
0.01
0.1
0.001 0.01 0.1 1 10
Sq u a r e W a v e Pu l se D u r a t i o n ( s)
thJ-hs
Steady State Value
R = 0.073 K/ W
(Single Side Cooled)
R = 0.031 K/ W
(Double Side Cooled)
(DC Operation)
thJ-hs
thJ-hs
ST7 3 0 C . . L Se r i e s
Transient Thermal Impedance Z (K/W)
VS-ST730CL Series
www.vishay.com
Vishay Semiconductors
Revision: 15-Apr-14
6
Document Number: 94414
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 11 - Gate Characteristics
ORDERING INFORMATION TABLE
0.1
1
10
100
0.001 0.01 0.1 1 10 100
VGD
IGD
(b)
(a)
Tj = 2 5 ° C
Tj = 12 5 ° C
Tj = - 4 0 ° C
(2)
(3)
Instantaneous Gate Current (A)
In st a n t a n e o u s G a t e V o lt a g e ( V )
a) Recommended load line for
b) Recommended load line for
<=30% rated di/ d t : 10V, 10ohms
Fre q u e n c y Lim it e d b y PG ( A V )
rated di/dt : 20V, 10ohms; tr<=1 µs
tr<=1 µs
(1)
(1) PGM = 10W, tp = 4ms
(2) PGM = 20W, tp = 2ms
(3) PGM = 40W, tp = 1ms
(4) PGM = 60W, tp = 0.66ms
Rectangular gate pulse
Device: ST730C..L Series
(4)
- Thyristor
2
- Essential part number
3
- 0 = Converter grade
4
- C = Ceramic PUK
5
- Voltage code x 100 = V
RRM
(see Voltage Ratings table)
6
- L = PUK case TO-200AC (B-PUK)
7
- 0 = Eyelet terminals (gate and auxiliary cathode unsoldered leads)
1 = Fast-on terminals (gate and auxiliary cathode unsoldered leads)
2 = Eyelet terminals (gate and auxiliary cathode soldered leads)
9
8
- Critical dV/dt:
None = 500 V/µs (standard selection)
L = 1000 V/µs (special selection)
3 = Fast-on terminals (gate and auxiliary cathode soldered leads)
Device code
51 32 4 6 7 8 9
STVS- 73 0 C 20 L 1 -
1 - Vishay Semiconductors product
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95076
P1-P3P4-P6P7-P8

VS-ST730C16L0

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Buy VS-ST730C16L0
Manufacturer:
Vishay Semiconductors
Description:
SCR Modules 1600 Volt 990 Amp
Lifecycle:
New from this manufacturer.
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