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MBRS540T3G

P1-P3P4-P5
© Semiconductor Components Industries, LLC, 2013
April, 2017 − Rev. 9
1 Publication Order Number:
MBRS540T3/D
MBRS540T3G,
NRVBS540T3G
Surface Mount
Schottky Power Rectifier
The MBRS540T3 employs the Schottky Barrier principle in a large
area metal−to−silicon power diode. State−of−the−art geometry
features epitaxial construction with oxide passivation and metal
overlay contact. Ideally suited for low voltage, high frequency
rectification, or as free wheeling and polarity protection diodes in
surface mount applications where compact size and weight are critical
to the system.
Features
• Small Compact Surface Mountable Package with J−Bend Leads
• Rectangular Package for Automated Handling
• Highly Stable Oxide Passivated Junction
• Excellent Ability to Withstand Reverse Avalanche Energy Transients
• Guard−Ring for Stress Protection
• NRVB Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable*
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Mechanical Characteristics
• Case: Epoxy, Molded, Epoxy Meets UL 94 V−0 @ 0.125 in
• Weight: 217 mg (Approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
• Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
• Polarity: Notch in Plastic Body Indicates Cathode Lead
• ESD Rating:
♦ Machine Model, C (> 400 V)
♦ Human Body Model, 3B (> 8000 V)
• Device Meets MSL 1 Requirements
Device Package Shipping
†
ORDERING INFORMATION
SCHOTTKY BARRIER
RECTIFIER
5.0 AMPERES, 40 VOLTS
MARKING DIAGRAM
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
MBRS540T3G SMC 2−Lead
(Pb−Free)
2,500 /
Tape & Reel
www.onsemi.com
B540 = Specific Device Code
A = Assembly Location**
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
NRVBS540T3G* SMC 2−Lead
(Pb−Free)
2,500 /
Tape & Reel
SMC 2−LEAD
CASE 403AC
AYWW
B540G
G
** The Assembly Location code (A) is front side
optional. In cases where the Assembly Location i
s
stamped in the package, the front side assembly
code may be blank.
MBRS540T3G, NRVBS540T3G
www.onsemi.com
2
MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
40 V
Average Rectified Forward Current
(At Rated V
R
, T
C
= 105°C)
I
F(AV)
5 A
Peak Repetitive Forward Current
(At Rated V
R
, Square Wave, 20 KHz, T
C
= 80°C)
I
FRM
10 A
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
I
FSM
190 A
Storage Temperature Range Tstg −65 to +150 °C
Operating Junction Temperature (Note 1) T
J
−65 to +150 °C
Voltage Rate of Change (Rated V
R
) dv/dt 10,000
V/ms
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dP
D
/dT
J
< 1/R
q
JA
.
THERMAL CHARACTERISTICS
Characteristic Symbol Value Unit
Thermal Resistance,
Junction−to−Lead (Note 2)
Thermal Resistance,
Junction−to−Ambient (Note 2)
R
q
JL
R
q
JA
12
111
°C/W
2. Rating applies when surface mounted on the minimum pad size recommended.
ELECTRICAL CHARACTERISTICS
Characteristic Symbol Value Unit
Maximum Instantaneous Forward Voltage (Note 3)
(i
F
= 5.0 A, T
C
= 25°C)
V
F
0.50
V
Maximum Instantaneous Reverse Current (Note 3)
(Rated dc Voltage, T
C
= 25°C)
(Rated dc Voltage, T
C
= 100°C)
i
R
0.3
15
mA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
MBRS540T3G, NRVBS540T3G
www.onsemi.com
3
TYPICAL CHARACTERISTICS
Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage
Figure 3. Typical Reverse Current Figure 4. Maximum Reverse Current
10
1
0.1
V
F
, INSTANTANEOUS FORWARD VOLTAGE (V)
0.10 0.30 0.50
T
J
= 125°C
T
J
= −55°C
T
J
= 25°C
i
F
, INSTANTANEOUS FORWARD
CURRENT (A)
V
R
, REVERSE VOLTAGE (V)
100E−3
10E−3
10E−6
100E−6
30 4020100
I
R
, REVERSE CURRENT (A)
100E−9
100E−12
T
J
= 125°C
0.20 0.40 0.60
T
J
= 100°C
10
1
0.1
V
F
, MAXIMUM INSTANTANEOUS FORWARD
VOLTAGE (V)
0.10 0.30 0.50
T
J
= 125°C
T
J
= −55°C
T
J
= 25°C
i
F
, INSTANTANEOUS FORWARD
CURRENT (A)
0.20 0.40 0.7
0
T
J
= 100°C
0.60
1E−3
1E−6
10E−9
1E−9
T
J
= −55°C
T
J
= 25°C
T
J
= 100°C
V
R
, REVERSE VOLTAGE (V)
100E−3
10E−3
10E−6
100E−6
30 4
0
20100
I
R
, MAXIMUM REVERSE CURRENT (A)
T
J
= 125°C
1E−3
1E−6
T
J
= −55°C
T
J
= 25°C
T
J
= 100°C
T
J
= −40°C
T
J
= −40°C
Figure 5. Current Derating
25 50 75
0
5
I
O
, AVERAGE FORWARD
CURRENT (A)
T
L
, LEAD TEMPERATURE (°C)
Figure 6. Forward Power Dissipation
134602 5
4.5
0
1.5
I
O
, AVERAGE FORWARD CURRENT (A)
P
FO
, AVERAGE POWER DISSIPATION (W)
1
2
3
4
9
6
7
8
SQUARE WAVE
dc
798
0.5
1
2.5
2
4
100 150125
I
pk
/I
O
= 5
I
pk
/I
O
= p
freq = 20 kHz
3.5
3
dc
SQUARE
WAVE
I
pk
/I
O
= p
I
pk
/I
O
= 5
I
pk
/I
O
= 10
I
pk
/I
O
= 20
P1-P3P4-P5

MBRS540T3G

Mfr. #:
Buy MBRS540T3G
Manufacturer:
ON Semiconductor
Description:
Schottky Diodes & Rectifiers 5A 40V
Lifecycle:
New from this manufacturer.
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