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MAX5063AASA+T

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P20
General Description
The MAX5062/MAX5063/MAX5064 high-frequency,
125V half-bridge, n-channel MOSFET drivers drive high-
and low-side MOSFETs in high-voltage applications.
These drivers are independently controlled and their
35ns typical propagation delay, from input to output, are
matched to within 3ns (typ). The high-voltage operation
with very low and matched propagation delay between
drivers, and high source/sink current capabilities in a
thermally enhanced package make these devices suit-
able for the high-power, high-frequency telecom power
converters. The 125V maximum input voltage range pro-
vides plenty of margin over the 100V input transient
requirement of telecom standards. A reliable on-chip
bootstrap diode connected between V
DD
and BST elimi-
nates the need for an external discrete diode.
The MAX5062A/C and the MAX5063A/C offer both nonin-
verting drivers (see the Selector Guide). The
MAX5062B/D and the MAX5063B/D offer a noninverting
high-side driver and an inverting low-side driver. The
MAX5064A/B offer two inputs per driver that can be
either inverting or noninverting. The MAX5062A/B/C/D
and the MAX5064A feature CMOS (V
DD
/ 2) logic inputs.
The MAX5063A/B/C/D and the MAX5064B feature TTL
logic inputs. The MAX5064A/B include a break-before-
make adjustment input that sets the dead time between
drivers from 16ns to 95ns. The drivers are available in the
industry-standard 8-pin SO footprint and pin configura-
tion, and a thermally enhanced 8-pin SO and 12-pin
(4mm x 4mm) thin QFN packages. All devices operate
over the -40°C to +125°C automotive temperature range.
Applications
Telecom Half-Bridge Power Supplies
Two-Switch Forward Converters
Full-Bridge Converters
Active-Clamp Forward Converters
Power-Supply Modules
Motor Control
Features
♦ HIP2100/HIP2101 Pin Compatible (MAX5062A/
MAX5063A)
♦ Up to 125V Input Operation
♦ 8V to 12.6V V
DD
Input Voltage Range
♦ 2A Peak Source and Sink Current Drive Capability
♦ 35ns Typical Propagation Delay
♦ Guaranteed 8ns Propagation Delay Matching
Between Drivers
♦ Programmable Break-Before-Make Timing
(MAX5064)
♦ Up to 1MHz Combined Switching Frequency while
Driving 100nC Gate Charge (MAX5064)
♦ Available in CMOS (V
DD
/ 2) or TTL Logic-Level
Inputs with Hysteresis
♦ Up to 15V Logic Inputs Independent of Input
Voltage
♦ Low 2.5pF Input Capacitance
♦ Instant Turn-Off of Drivers During Fault or PWM
Start-Stop Synchronization (MAX5064)
♦ Low 200µA Supply Current
♦ Versions Available With Combination of
Noninverting and Inverting Drivers (MAX5062B/D
and MAX5063B/D)
♦ Available in 8-Pin SO, Thermally Enhanced SO,
and 12-Pin Thin QFN Packages
MAX5062/MAX5063/MAX5064
125V/2A, High-Speed,
Half-Bridge MOSFET Drivers
________________________________________________________________ Maxim Integrated Products 1
PART
TEMP RANGE
PIN-
PACKAGE
TOP
MARK
PKG
CODE
MAX5062AASA
-40°C to +125°C
8 SO — S8-5
MAX5062BASA
-40°C to +125°C
8 SO — S8-5
MAX5062CASA
-40°C to +125°C 8 SO-EP*
—
S8E-14
MAX5062DASA
-40°C to +125°C 8 SO-EP*
—
S8E-14
Ordering Information
PART HIGH-SIDE DRIVER LOW-SIDE DRIVER LOGIC LEVELS PIN COMPATIBLE
MAX5062AASA Noninverting Noninverting CMOS (V
DD
/ 2) HIP 2100IB
MAX5062BASA Noninverting Inverting CMOS (V
DD
/ 2) —
MAX5062CASA Noninverting Noninverting CMOS (V
DD
/ 2) —
MAX5062DASA Noninverting Inverting CMOS (V
DD
/ 2) —
Selector Guide
19-3502; Rev 5; 5/07
For pricing, delivery, and ordering information, please contact Maxim/Dallas Direct! at
1-888-629-4642, or visit Maxim’s website at www.maxim-ic.com.
Selector Guide continued at end of data sheet.
*EP = Exposed paddle.
Devices are available in both leaded and lead-free packaging.
Specify lead-free by replacing “-T” with “+T” when ordering.
Ordering Information continued at end of data sheet.
MAX5062/MAX5063/MAX5064
125V/2A, High-Speed,
Half-Bridge MOSFET Drivers
2 _______________________________________________________________________________________
ABSOLUTE MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS
(V
DD
= V
BST
= +8V to +12.6V, V
HS
= GND = 0V, BBM = open, T
A
= -40°C to +125°C, unless otherwise noted. Typical values are at
V
DD
= V
BST
= +12V and T
A
= +25°C.) (Note 1)
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
(All voltages referenced to GND, unless otherwise noted.)
V
DD
, IN_H, IN_L, IN_L+, IN_L-, IN_H+, IN_H-........-0.3V to +15V
DL, BBM .....................................................-0.3V to (V
DD
+ 0.3V)
HS............................................................................-5V to +130V
DH to HS.....................................................-0.3V to (V
DD
+ 0.3V)
BST to HS ...............................................................-0.3V to +15V
AGND to PGND (MAX5064) ..................................-0.3V to +0.3V
dV/dt at HS ........................................................................50V/ns
Continuous Power Dissipation (T
A
= +70°C)
8-Pin SO (derate 5.9mW/°C above +70°C)...............470.6mW
8-Pin SO with Exposed Pad (derate 19.2mW/°C
above +70°C)* ....................................................1538.5mW
12-Pin Thin QFN (derate 24.4mW/°C
above +70°C)* ....................................................1951.2mW
Maximum Junction Temperature .....................................+150°C
Operating Temperature Range .........................-40°C to +125°C
Storage Temperature Range .............................-65°C to +150°C
Lead Temperature (soldering, 10s) .................................+300°C
*Per JEDEC 51 standard multilayer board.
PARAMETER
SYMBOL
CONDITIONS
MIN TYP MAX
UNITS
POWER SUPPLIES
Operating Supply Voltage V
DD
(Note 2) 8.0
12.6
V
MAX5062_/
MAX5063_
70
140
V
DD
Quiescent Supply Current I
DD
IN_H = IN_L = GND
(no switching)
MAX5064_
120 260
µA
V
DD
Operating Supply Current I
DDO
f
SW
= 500kHz, V
DD
= +12V 3 mA
BST Quiescent Supply Current I
BST
IN_H = IN_L = GND (no switching) 15 40 µA
BST Operating Supply Current I
BSTO
f
SW
= 500kHz, V
DD
= V
BST
= +12V 3 mA
UVLO (V
DD
to GND)
UVLO
VDD
V
DD
rising 6.5 7.3 8.0 V
UVLO (BST to HS)
UVLO
BST
BST rising 6.0 6.9 7.8 V
UVLO Hysteresis 0.5 V
LOGIC INPUT
MAX5062_/MAX5064A,
CMOS (V
DD
/ 2) version
0.67 x
V
DD
0.55 x
V
DD
Input-Logic High V
IH_
MAX5063_/MAX5064B, TTL version 2
1.65
V
MAX5062_/MAX5064A,
CMOS (V
DD
/ 2) version
0.4 x
V
DD
0.33 x
V
DD
Input-Logic Low V
IL_
MAX5063_/MAX5064B, TTL version 1.4 0.8
V
MAX5062_/MAX5064A,
CMOS (V
DD
/ 2) version
1.6
Logic-Input Hysteresis V
HYS
MAX5063_/MAX5064B, TTL version
0.25
V
MAX5062/MAX5063/MAX5064
125V/2A, High-Speed,
Half-Bridge MOSFET Drivers
_______________________________________________________________________________________ 3
ELECTRICAL CHARACTERISTICS (continued)
(V
DD
= V
BST
= +8V to +12.6V, V
HS
= GND = 0V, BBM = open, T
A
= -40°C to +125°C, unless otherwise noted. Typical values are at
V
DD
= V
BST
= +12V and T
A
= +25°C.) (Note 1)
PARAMETER
SYMBOL
CONDITIONS
MIN TYP MAX
UNITS
V
IN_H+
, V
IN_L+
= 0V
V
IN_L
= V
DD
for MAX5062B/D, MAX5063B/D
V
IN_H-
, V
IN_L-
, V
IN_H
= V
DD
Logic-Input Current I_IN
V
IN_L
= 0V for MAX5062A/C, MAX5063A/C
-1
0.001
+1 µA
IN_H+, IN_L+ IN_H, to GND
IN_L to V
DD
for MAX5062B/D,
MAX5063B/D
IN_H-, IN_L-, IN_H, to V
DD
Input Resistance R
IN
IN_L for MAX5062A/C, MAX5063A/C to GND
1MΩ
Input Capacitance C
IN
2.5 pF
HIGH-SIDE GATE DRIVER
HS Maximum Voltage
V
HS_MAX
125
V
BST Maximum Voltage
V
BST_MAX
140
V
T
A
= +25°C 2.5 3.3
Driver Output Resistance
(Sourcing)
R
ON_HP
V
DD
= 12V, I
DH
= 100mA
(sourcing)
T
A
= +125°C 3.5 4.6
Ω
T
A
= +25°C 2.1 2.8
Driver Output Resistance
(Sinking)
R
ON_HN
V
DD
= 12V, I
DH
= 100mA
(sinking)
T
A
= +125°C 3.2 4.2
Ω
DH Reverse Current (Latchup
Protection)
(Note 3)
400
mA
Power-Off Pulldown Clamp
Voltage
V
BST
= 0V or floating, I
DH
= 1mA (sinking) 0.94 1.16
V
Peak Output Current (Sourcing) C
L
= 10nF, V
DH
= 0V 2 A
Peak Output Current (Sinking)
I
DH_PEAK
C
L
= 10nF, V
DH
= 12V 2 A
LOW-SIDE GATE DRIVER
T
A
= +25°C 2.5 3.3
Driver Output Resistance
(Sourcing)
R
ON_LP
V
DD
= 12V, I
DL
= 100mA
(sourcing)
T
A
= +125°C 3.5 4.6
Ω
T
A
= +25°C 2.1 2.8
Driver Output Resistance
(Sinking)
R
ON_LN
V
DD
= 12V, I
DL
= 100mA
(sinking)
T
A
= +125°C 3.2 4.2
Ω
Reverse Current at DL (Latchup
Protection)
(Note 3)
400
mA
Power-Off Pulldown Clamp
Voltage
V
DD
= 0V or floating, I
DL
= 1mA (sinking)
0.95 1.16
V
Peak Output Current (Sourcing) I
PK_LP
C
L
= 10nF, V
DL
= 0V 2 A
Peak Output Current (Sinking) I
PK_LN
C
L
= 10nF, V
DL
= 12V 2 A
Forward Voltage Drop V
f
I
BST
= 100mA
0.91 1.11
V
Turn-On and Turn-Off Time t
R
I
BST
= 100mA 40 ns
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P20

MAX5063AASA+T

Mfr. #:
Buy MAX5063AASA+T
Manufacturer:
Maxim Integrated
Description:
Gate Drivers 125V 2A Half-Bridge MOSFET Driver
Lifecycle:
New from this manufacturer.
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