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MAX5064BATC+T

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P20
MAX5062/MAX5063/MAX5064
125V/2A, High-Speed,
Half-Bridge MOSFET Drivers
_______________________________________________________________________________________ 7
DH OR DL FALL PROPAGATION DELAY
vs. TEMPERATURE
MAX5062/3/4 toc14
TEMPERATURE (°C)
PROPAGATION DELAY (ns)
1109565 80-10 5 20 35 50-25
5
10
15
20
25
35
55
60
30
45
50
40
0
-40 125
DH
DL
BREAK-BEFORE-MAKE
DEAD TIME vs. R
BBM
MAX5062/3/4 toc15
R
BBM
(kΩ)
t
BBM
(ns)
290
210 25090 130
170
50
25
50
75
100
125
175
250
150
200
225
0
10
MAX5064
BREAK-BEFORE-MAKE DEAD TIME
vs. TEMPERATURE
MAX5062/3/4 toc16
TEMPERATURE (°C)
t
BBM
(ns)
1109565 80-10 5 20 35 50-25
10
20
30
40
50
70
110
100
90
120
60
80
0
-40 125
R
BBM
= 100kΩ
R
BBM
= 10kΩ
MAX5064
DELAY MATCHING (DH/DL RISING)
MAX5062/3/4 toc17
10ns/div
INPUT
5V/div
5V/div
DH/DL
C
L
= 0
DELAY MATCHING (DH/DL FALLING)
MAX5062/3/4 toc18
10ns/div
INPUT
5V/div
5V/div
DH/DL
C
L
= 0
DH/DL RESPONSE TO V
DD
GLITCH
MAX5062/3/4 toc19
40µs/div
DH
DL
V
DD
10V/div
10V/div
10V/div
5V/div
INPUT
Typical Operating Characteristics (continued)
(Typical values are at V
DD
= V
BST
= +12V and T
A
= +25°C, unless otherwise specified.)
MAX5062/MAX5063/MAX5064
125V/2A, High-Speed,
Half-Bridge MOSFET Drivers
8 _______________________________________________________________________________________
PIN NAME FUNCTION
1 BST
Boost Flying Capacitor Connection. Connect a 0.1µF ceramic capacitor between BST and HS for the
high-side MOSFET driver supply.
2 DH High-Side-Gate Driver Output. Drives high-side MOSFET gate.
3 HS Source Connection for High-Side MOSFET. Also serves as a return terminal for the high-side driver.
4 AGND
Analog Ground. Return path for low-switching current signals. IN_H/IN_L inputs referenced to
5 BBM
Break-Before-Make Programming Resistor Connection. Connect a 10kΩ to 100kΩ resistor from BBM
to AGND to program the break-before-make time (t
BBM
) from 16ns to 95ns. Resistance values
greater than 200kΩ disables the BBM function and makes t
BBM
= 1ns. Bypass this pin with at least a
1nF capacitor to AGND.
6 IN_H-
High-Side Inverting CMOS (V
DD
/ 2) (MAX5064A), or TTL (MAX5064B) Logic Input. Connect to
AGND when not used.
7 IN_H+
High-Side Noninverting CMOS (V
DD
/ 2) (MAX5064A), or TTL (MAX5064B) Logic Input. Connect to
V
DD
when not used.
8 IN_L-
Low-Side Inverting CMOS (V
DD
/ 2) (MAX5064A), or TTL (MAX5064B) Logic Input. Connect to AGND
when not used.
9 IN_L+
Low-Side Noninverting CMOS (V
DD
/ 2) (MAX5064A), or TTL (MAX5064B) Logic Input. Connect to
V
DD
when not used.
10 PGND
Power Ground. Return path for high-switching current signals. Use PGND as a return path for the
low-side driver.
11 DL Low-Side-Gate Driver Output. Drives the low-side MOSFET gate.
12 V
DD
Power Input. Bypass to PGND with a 0.1µF ceramic in parallel with a 1µF ceramic capacitor.
—EP
Exposed Pad. Internally connected to AGND. Externally connect to a large ground plane to aid in
heat dissipation.
MAX5064 Pin Description
PIN NAME FUNCTION
1V
DD
Power Input. Bypass to GND with a parallel combination of 0.1µF and 1µF ceramic capacitor.
2 BST
Boost Flying Capacitor Connection. Connect a 0.1µF ceramic capacitor between BST and HS for the
high-side MOSFET driver supply.
3 DH High-Side-Gate Driver Output. Driver output for the high-side MOSFET gate.
4 HS Source Connection for High-Side MOSFET. Also serves as a return terminal for the high-side driver.
5 IN_H High-Side Noninverting Logic Input
6 IN_L
Low-Side Noninverting Logic Input (MAX5062A/C, MAX5063A/C). Low-side inverting logic input
(MAX5062B/D, MAX5063B/D).
7 GND Ground. Use GND as a return path to the DL driver output and IN_H/IN_L inputs.
8 DL Low-Side-Gate Driver Output. Drives low-side MOSFET gate.
—EP
Exposed Pad. Internally connected to GND. Externally connect the exposed pad to a large ground
plane to aid in heat dissipation (MAX5062C/D, MAX5063C/D only).
MAX5062/MAX5063 Pin Description
MAX5062/MAX5063/MAX5064
125V/2A, High-Speed,
Half-Bridge MOSFET Drivers
_______________________________________________________________________________________ 9
Detailed Description
The MAX5062/MAX5063/MAX5064 are 125V/2A high-
speed, half-bridge MOSFET drivers that operate from a
supply voltage of +8V to +12.6V. The drivers are
intended to drive a high-side switch without any isola-
tion device like an optocoupler or drive transformer.
The high-side driver is controlled by a TTL/CMOS logic
signal referenced to ground. The 2A source and sink
drive capability is achieved by using low R
DS_ON
p-
and n-channel driver output stages. The BiCMOS
process allows extremely fast rise/fall times and low
propagation delays. The typical propagation delay from
the logic-input signal to the drive output is 35ns with a
matched propagation delay of 3ns typical. Matching
these propagation delays is as important as the
absolute value of the delay itself. The high 125V input
voltage range allows plenty of margin above the 100V
transient specification per telecom standards.
The MAX5064 is available in a thermally enhanced
TQFN package, which can dissipate up to 1.95W (at
+70°C) and allow up to 1MHz switching frequency
while driving 100nC combined gate-charge MOSFETs.
Figure 1. Timing Characteristics for Noninverting and Inverting Logic Inputs
V
IH
V
IL
90%
10%
V
IH
V
IL
t
F
IN_H+
DH
IN_H-
t
D_ON3
t
D_ON4
t
D_OFF4
t
D_OFF3
V
IH
V
IL
90%
10%
V
IH
V
IL
t
R
t
R
t
F
IN_L+
DL
IN_L-
t
D_ON1
t
D_ON2
t
D_OFF2
t
D_OFF1
t
MATCH1
= (t
D_ON2
- t
D_ON1
) or (t
D_OFF2
- t
D_OFF1
)
t
MATCH2
= (t
D_ON3
- t
D_ON1
) or (t
D_ON4
- t
D_ON2
) or (t
D_OFF3
- t
D_OFF1
) or (t
D_OFF4
- t
D_OFF2
)
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P20

MAX5064BATC+T

Mfr. #:
Buy MAX5064BATC+T
Manufacturer:
Maxim Integrated
Description:
Gate Drivers 125V 2A Half-Bridge MOSFET Driver
Lifecycle:
New from this manufacturer.
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