2001 Apr 17 3
NXP Semiconductors Product specification
Silicon PIN diode BAP64-06W
ELECTRICAL CHARACTERISTICS
T
j
= 25C unless otherwise specified.
Note
1. Guaranteed on AQL basis: inspection level S4, AQL 1.0.
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
Per diode
V
F
forward voltage I
F
= 50 mA 0.95 1.1 V
I
R
reverse current V
R
= 100 V 10 A
V
R
=20V 1 A
C
d
diode capacitance V
R
= 0; f = 1 MHz 0.52 pF
V
R
= 1 V; f = 1 MHz 0.37 pF
V
R
= 20 V; f = 1 MHz 0.23 0.35 pF
r
D
diode forward resistance I
F
= 0.5 mA; f = 100 MHz; note 1 20 40
I
F
= 1 mA; f = 100 MHz; note 1 10 20
I
F
=10mA; f=100MHz; note1 2 3.8
I
F
= 100 mA; f = 100 MHz; note 1 0.7 1.35
s
21
2
isolation V
R
= 0; f = 900 MHz 18.5 dB
V
R
= 0; f = 1800 MHz 13.5 dB
V
R
= 0; f = 2450 MHz 10.9 dB
s
21
2
insertion loss I
F
= 0.5 mA; f = 900 MHz 1.86 dB
I
F
= 0.5 mA; f = 1800 MHz 2.06 dB
I
F
= 0.5 mA; f = 2450 MHz 2.23 dB
s
21
2
insertion loss I
F
= 1 mA; f = 900 MHz 1.01 dB
I
F
= 1 mA; f = 1800 MHz 1.06 dB
I
F
= 1 mA; f = 2450 MHz 1.10 dB
s
21
2
insertion loss I
F
=10mA; f=900MHz 0.19 dB
I
F
= 10 mA; f = 1800 MHz 0.21 dB
I
F
= 10 mA; f = 2450 MHz 0.27 dB
s
21
2
insertion loss I
F
= 100 mA; f = 900 MHz 0.08 dB
I
F
= 100 mA; f = 1800 MHz 0.10 dB
I
F
= 100 mA; f = 2450 MHz 0.16 dB
L
charge carrier life time when switched from I
F
=10mA to
I
R
=6mA; R
L
=100;
measured at I
R
=3mA
1.55 s
L
S
series inductance I
F
= 100 mA; f = 100 MHz 1.6 nH
SYMBOL PARAMETER VALUE UNIT
R
th j-s
thermal resistance from junction to soldering point 250 K/W
