Document Number: 91107
www.vishay.com
S11-1052-Rev. C, 30-May-11 1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Power MOSFET
IRFBC20S, SiHFBC20S, IRFBC20L, SiHFBC20L
Vishay Siliconix
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• Surface Mount (IRFBC20S, SiHFBC20S)
•
Low-Profile Through-Hole (IRFBC20L, SiHFBC20L)
• Available in Tape and Reel (IRFBC20, SiiHFBC20S)
• Dynamic dV/dt Rating
• 150 °C Operating Temperature
•Fast Switching
• Fully Avalanche Rated
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The D
2
PAK is a surface mount power package capable of
the accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible
on-resistance in any existing surface mount package. The
D
2
PAK is suitable for high current applications because of
its low internal connection resistance and can dissipate up
to 2.0 W in a typical surface mount application. The
through-hole version (IRFBC20L, SiHFBC20L) is a available
for low-profile applications.
Note
a. See device orientation.
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
DD
= 50 V, starting T
J
= 25 °C, L = 31 mH, R
g
= 25 , I
AS
= 2.2 A (see fig. 12).
c. I
SD
2.2 A, dI/dt 40 A/μs, V
DD
V
DS
, T
J
150 °C.
d. 1.6 mm from case.
e. Uses IRFBC20, SiHFBC20 data and test conditions.
PRODUCT SUMMARY
V
DS
(V) 600
R
DS(on)
()V
GS
= 10 V 4.4
Q
g
(Max.) (nC) 18
Q
gs
(nC) 3.0
Q
gd
(nC) 8.9
Configuration Single
D
2
PAK (TO-263)
G
D
S
I
2
PAK (TO-262)
G
D
S
ORDERING INFORMATION
Package D
2
PAK (TO-263) D
2
PAK (TO-263) I
2
PAK (TO-262)
Lead (Pb)-free and Halogen-free SiHFBC20S-GE3 SiHFBC20STRL-GE3
a
SiHFBC20L-GE3
Lead (Pb)-free
IRFBC20SPbF IRFBC20STRLPbF
a
IRFBC20LPbF
SiHFBC20S-E3 SiHFBC20STL-E3
a
SiHFBC20L-E3
ABSOLUTE MAXIMUM RATINGS (T
C
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
DS
600
V
Gate-Source Voltage V
GS
± 20
Continuous Drain Current
e
V
GS
at 10 V
T
C
= 25 °C
I
D
2.2
AT
C
= 100 °C 1.4
Pulsed Drain Current
a, e
I
DM
8.0
Linear Derating Factor 0.40 W/°C
Single Pulse Avalanche Energy
b, e
E
AS
84 mJ
Avalanche Current
a
I
AR
2.2 A
Repetiitive Avalanche Energy
a
E
AR
5.0 mJ
Maximum Power Dissipation
T
A
= 25 °C
P
D
3.1
W
T
C
= 25 °C 50
Peak Diode Recovery dV/dt
c, e
dV/dt 3.0 V/ns
Operating Junction and Storage Temperature Range T
J
, T
stg
- 55 to + 150
°C
Soldering Recommendations (Peak Temperature) for 10 s 300
d
* Pb containing terminations are not RoHS compliant, exemptions may apply
