OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

BUK9Y104-100B,115

P1-P3P4-P6P7-P9P10-P12P13-P15
BUK9Y104-100B All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 04 — 7 April 2010 6 of 14
NXP Semiconductors
BUK9Y104-100B
N-channel TrenchMOS logic level FET
6. Characteristics
Table 6. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
V
(BR)DSS
drain-source
breakdown voltage
I
D
=0.25mA; V
GS
=0V; T
j
= 25 °C 100 - - V
I
D
=0.25mA; V
GS
=0V; T
j
= -55 °C 90 - - V
V
GS(th)
gate-source threshold
voltage
I
D
=1mA; V
DS
=V
GS
; T
j
=25°C;
see Figure 9; see Figure 10
1.25 1.65 2.15 V
V
GSth
gate-source threshold
voltage
I
D
=1mA; V
DS
=V
GS
; T
j
= 175 °C;
see Figure 9
; see Figure 10
0.5--V
I
D
=1mA; V
DS
=V
GS
; T
j
=-55°C;
see Figure 9; see Figure 10
--2.45V
I
DSS
drain leakage current V
DS
=100V; V
GS
=0V; T
j
= 25 °C - 0.02 1 µA
I
GSS
gate leakage current V
DS
=0V; V
GS
=15V; T
j
= 25 °C - 2 100 nA
V
DS
=0V; V
GS
=-15V; T
j
= 25 °C - 2 100 nA
R
DSon
drain-source on-state
resistance
V
GS
=10V; I
D
=5A; T
j
= 25 °C - 86 99 mΩ
V
GS
=5V; I
D
=5A; T
j
=175°C;
see Figure 11
- - 270 mΩ
V
GS
=4.5V; I
D
=5A; T
j
= 25 °C - - 107 mΩ
V
GS
=5V; I
D
=5A; T
j
=25°C;
see Figure 11
; see Figure 12
- 91 104 mΩ
I
DSS
drain leakage current V
DS
=100V; V
GS
=0V; T
j
= 175 °C - - 500 µA
Dynamic characteristics
Q
G(tot)
total gate charge I
D
=5A; V
DS
=80V; V
GS
=5V;
see Figure 13
-11-nC
Q
GS
gate-source charge - 1.7 - nC
Q
GD
gate-drain charge - 4.7 - nC
C
iss
input capacitance V
GS
=0V; V
DS
=25V; f=1MHz;
T
j
=25°C; see Figure 14
- 854 1139 pF
C
oss
output capacitance - 87 105 pF
C
rss
reverse transfer
capacitance
- 4258pF
t
d(on)
turn-on delay time V
DS
=30V; R
L
=6Ω; V
GS
=5V;
R
G(ext)
=10Ω
-15-ns
t
r
rise time - 8 - ns
t
d(off)
turn-off delay time - 36 - ns
t
f
fall time -6-ns
Source-drain diode
V
SD
source-drain voltage I
S
=5A; V
GS
=0V; T
j
=25°C;
see Figure 15
- 0.85 1.2 V
t
rr
reverse recovery time I
S
=20A; dI
S
/dt = -100 A/µs; V
GS
=0V;
V
DS
=30V
-79-ns
Q
r
recovered charge - 190 - nC
BUK9Y104-100B All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 04 — 7 April 2010 7 of 14
NXP Semiconductors
BUK9Y104-100B
N-channel TrenchMOS logic level FET
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values.
Fig 6. Drain-source on-state resistance as a function
of drain current; typical values.
Fig 7. Forward transconductance as a function of
drain current; typical values.
Fig 8. Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
003aac953
0
10
20
30
40
0246810
V
DS
(V)
I
D
(A)
3.2
3
3.6
2.6
2.2
5
3.8
V
GS
(V) = 10
003aac957
0
100
200
300
400
0 10203040
I
D
(A)
R
DSon
(m
Ω
)
3.6
2.2
2.8 3.2 3.8
5
V
GS
(V) = 10
003aac958
10
15
20
25
30
0102030
I
D
(A)
g
fs
(S)
003aac954
0
5
10
15
20
012345
V
GS
(V)
I
D
(A)
T
j
= 175
°
C
T
j
= 25
°
C
BUK9Y104-100B All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 04 — 7 April 2010 8 of 14
NXP Semiconductors
BUK9Y104-100B
N-channel TrenchMOS logic level FET
Fig 9. Gate-source threshold voltage as a function of
junction temperature
Fig 10. Sub-threshold drain current as a function of
gate-source voltage
Fig 11. Normalized drain-source on-state resistance
factor as a function of junction temperature
Fig 12. Drain-source on-state resistance as a function
of gate-source voltage; typical values.
003aad557
0
0.5
1
1.5
2
2.5
-60 0 60 120 180
T
j
(
°
C)
V
GS(th)
(V)
max
typ
min
003aad565
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
0123
V
GS
(V)
I
D
(A)
max
typ
min
03aa29
0
1
2
3
-60 0 60 120 180
T
j
(
°
C)
a
003aac956
80
90
100
110
0481216
V
GS
(V)
R
DSON
(mΩ)
P1-P3P4-P6P7-P9P10-P12P13-P15

BUK9Y104-100B,115

Mfr. #:
Buy BUK9Y104-100B,115
Manufacturer:
Nexperia
Description:
MOSFET N-CHANNEL TRENCHMOS LOGIC LEVEL FET
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet