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NSR05T30XV2T5G

P1-P3P4-P5
© Semiconductor Components Industries, LLC, 2017
April, 2017 − Rev. 0
1 Publication Order Number:
NSR05T30XV2/D
NSR05T30XV2
500 mA, 30 V Schottky
Barrier Diode
These Schottky barrier diodes are optimized for low forward
voltage drop and low leakage current that offers the most optimal
power dissipation in applications. They are housed in spacing saving
micro−packaging ideal for space constraint applications.
Features
• Low Forward Voltage Drop − 370 mV (Typ.) @ I
F
= 500 mA
• Low Reverse Current − 52 mA (Typ.) @ V
R
= 30 V
• 500 mA of Continuous Forward Current
• High Switching Speed
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Typical Applications
• LCD and Keypad Backlighting
• Camera Photo Flash
• Buck and Boost dc−dc Converters
• Reverse Voltage and Current Protection
• Clamping & Protection
MAXIMUM RATINGS
Rating Symbol Value Unit
Reverse Voltage V
R
30 V
Forward Current (DC) I
F
500 mA
Forward Surge Current
(60 Hz @ 1 cycle)
I
FSM
3.0 A
Repetitive Peak Forward Current
(Pulse Wave = 1 sec, Duty Cycle = 66%)
I
FRM
1.5 A
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1
CATHODE
2
ANODE
www.onsemi.com
Device Package Shipping†
ORDERING INFORMATION
NSR05T30XV2T5G SOD−523
(Pb−Free)
8000 / Tape &
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
s
Brochure, BRD8011/D.
SOD−523
CASE 502
MARKING
DIAGRAM
YL
12
M
YL = Specific Device Code
M Date Code
1
2
NSR05T30XV2
www.onsemi.com
2
THERMAL CHARACTERISTICS
Characteristic Symbol Min Typ Max Unit
Thermal Resistance
Junction−to−Ambient (Note 1)
Total Power Dissipation @ T
A
= 25°C
R
q
JA
P
D
489
250
°C/W
mW
Thermal Resistance
Junction−to−Ambient (Note 2)
Total Power Dissipation @ T
A
= 25°C
R
q
JA
P
D
358
350
°C/W
mW
Junction and Storage Temperature Range T
J
, T
stg
−55 to +150 °C
1. Mounted onto a 4 in square FR−4 board 50 mm sq. 1 oz. Cu 0.06” thick single sided. Operating to steady state.
2. Mounted onto a 4 in square FR−4 board 650 mm sq. 1 oz. Cu 0.06” thick single sided. Operating to steady state.
Figure 1. Thermal Response (Note 1)
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D = 0.5
PULSE TIME (sec)
0.010.001 100.0001 0.10.00001 10.000001
0.1
1
10
1000
100 1000
100
R(t) (°C/W)
Figure 2. Thermal Response (Note 2)
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D = 0.5
PULSE TIME (sec)
0.010.001 100.0001 0.10.00001 10.000001
0.1
1
10
1000
100 100
0
100
R(t) (
°
C/W)
NSR05T30XV2
www.onsemi.com
3
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
Reverse Leakage
(V
R
= 10 V)
(V
R
= 30 V)
I
R
30
52
110
170
mA
Forward Voltage
(I
F
= 10 mA)
(I
F
= 100 mA)
(I
F
= 200 mA)
(I
F
= 500 mA)
V
F
200
275
205
370
340
380
420
450
mV
Total Capacitance
(V
R
= 1.0 V, f = 1.0 MHz)
C
T
85 pF
Reverse Recovery Time
(I
F
= I
R
= 10 mA, I
R(REC)
= 1.0 mA, Figure 3)
t
rr
23 ns
Peak Forward Recovery Voltage
(I
F
= 100 mA, t
r
= 20 ns, Figure 4)
V
FRM
395 mV
Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (I
F
) of 10 mA.
Notes: 2. Input pulse is adjusted so I
R(peak)
is equal to 10 mA.
Notes: 3. t
p
» t
rr
+10 V
2.0 k
820 W
0.1 mF
D.U.T.
V
R
100 mH
0.1 mF
50 W OUTPUT
PULSE
GENERATOR
50 W INPUT
SAMPLING
OSCILLOSCOPE
t
r
t
p
t
10%
90%
I
F
I
R
t
rr
t
i
R(REC)
= 1.0 mA
OUTPUT PULSE
(I
F
= I
R
= 10 mA; MEASURED
at i
R(REC)
= 1.0 mA)
I
F
INPUT SIGNAL
Figure 3. Recovery Time Equivalent Test Circuit
Figure 4. Peak Forward Recovery Voltage Definition
t
r
Time
V
F
V
FRM
I
F
Time
V
F
P1-P3P4-P5

NSR05T30XV2T5G

Mfr. #:
Buy NSR05T30XV2T5G
Manufacturer:
ON Semiconductor
Description:
Schottky Diodes & Rectifiers TRENCH SCHOTTKY NIPT BARR
Lifecycle:
New from this manufacturer.
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