RN4905
2014-03-01
2
Q1, Q2 Common Absolute Maximum Ratings
(Ta = 25
°
C)
Characteristic Symbol Rating Unit
Collector power dissipation P
C
* 200 mW
Junction temperature T
j
150 °C
Storage temperature range T
stg
−55 to 150 °C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
* : Total rating
Marking
Equivalent Circuit
(Top View)
Q1 Electrical Characteristics
(Ta = 25°C)
Characteristic Symbol
Test
Circuit
Test Condition Min Typ. Max Unit
I
CBO
― V
CB
= −50V, I
E
= 0 ― ― −100
Collector cut-off current
I
CEO
― V
CE
= −50V, I
B
= 0 ― ― −500
nA
Emitter cut-off current I
EBO
― V
EB
= −5V, I
C
= 0 −0.078 ― −0.145 mA
DC current gain h
FE
― V
CE
= −5V, I
C
= −10mA 80 ― ― ―
Collector-emitter saturation voltage V
CE (sat)
― I
C
= −5mA, I
B
= −0.25mA ― −0.1 −0.3 V
Input voltage (ON) V
I (ON)
― V
CE
= −0.2V, I
C
= −5mA −0.6 ― −1.1 V
Input voltage (OFF) V
I (OFF)
― V
CE
= −5V, I
C
= −0.1mA −0.5 ― −0.8 V
Transition frequency
f
T
―
V
CE
= −10V, I
C
= −5mA
― 200 ― MHz
Collector output capacitance
C
ob
― V
CB
= −10V, I
E
= 0, f = 1MHz ― 3 6 pF
