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SS10PH10-M3/86A

P1-P3P4-P5
SS10PH9, SS10PH10
www.vishay.com
Vishay General Semiconductor
Revision: 23-Dec-14
1
Document Number: 89000
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
High Current Density Surface Mount
High Voltage Schottky Rectifiers
FEATURES
• Power pack
• Very low profile - typical height of 1.1 mm
• Ideal for automated placement
• Guardring for overvoltage protection
• High barrier technology, T
J
= 175 °C maximum
• Low leakage current
• Meets MSL level 1, per J-STD-020
• AEC-Q101 qualified available
- Automotive ordering code: base P/NHM3
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency rectifier of switching mode
power supplies, freewheeling diodes, DC/DC converters, or
polarity protection application.
MECHANICAL DATA
Case: TO-277A (SMPC)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Base P/NHM3 - halogen-free, RoHS-compliant, and
AEC-Q101 qualified
Base P/NHM3_X - halogen-free, RoHS-compliant, and
AEC-Q101 qualified
(“_X” denotes revision code e.g. A, B, .....)
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 2 whisker test, HM3 suffix
meets JESD 201 class 2 whisker test
PRIMARY CHARACTERISTICS
I
F(AV)
10 A
V
RRM
90 V, 100 V
I
FSM
200 A
E
AS
20 mJ
V
F
at I
F
= 10 A 0.661 V
I
R
0.3 μA
T
J
max. 175 °C
Package TO-277A (SMPC)
Diode variations Single die
TO-277A (SMPC)
Anode 1
Anode 2
Cathode
K
K
2
1
eSMP
®
Series
Available
MAXIMUM RATINGS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL SS10PH9 SS10PH10 UNIT
Device marking code 10H9 10H10
Maximum repetitive peak reverse voltage V
RRM
90 100 V
Maximum average forward rectified current (fig. 1) I
F(AV)
10 A
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
I
FSM
200 A
Non-repetitive avalanche energy
at I
AS
= 2.0 A, T
J
= 25 °C
E
AS
20 mJ
Operating junction and storage temperature range T
J
, T
STG
-55 to +175 °C
SS10PH9, SS10PH10
www.vishay.com
Vishay General Semiconductor
Revision: 23-Dec-14
2
Document Number: 89000
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
(2)
Pulse test: Pulse width 40 ms
Note
(1)
Units mounted on recommended PCB 1 oz. pad layout
Note
(1)
AEC-Q101 qualified
RATINGS AND CHARACTERISTICS CURVES (T
A
= 25 °C unless otherwise specified)
Fig. 1 - Maximum Forward Current Derating Curve Fig. 2 - Forward Power Loss Characteristics
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT
Instantaneous forward voltage
I
F
= 5 A
T
A
= 25 °C
V
F
(1)
0.725 -
V
I
F
= 10 A 0.800 0.88
I
F
= 5 A
T
A
= 125 °C
0.581 -
I
F
= 10 A 0.661 0.74
Reverse current Rated V
R
T
A
= 25 °C
I
R
(2)
0.3 10 μA
T
A
= 125 °C 0.3 3 mA
Typical junction capacitance 4.0 V, 1 MHz C
J
270 - pF
THERMAL CHARACTERISTICS (T
A
= 25 °C unless otherwise specified)
PARAMETER SYMBOL SS10PH9 SS10PH10 UNIT
Typical thermal resistance
R
JA
(1)
60
°C/W
R
JL
3
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE
SS10PH10-M3/86A 0.10 86A 1500 7" diameter plastic tape and reel
SS10PH10-M3/87A 0.10 87A 6500 13" diameter plastic tape and reel
SS10PH10HM3/86A
(1)
0.10 86A 1500 7" diameter plastic tape and reel
SS10PH10HM3/87A
(1)
0.10 87A 6500 13" diameter plastic tape and reel
SS10PH10HM3_A/H
(1)
0.10 H 1500 7" diameter plastic tape and reel
SS10PH10HM3_A/I
(1)
0.10 I 6500 13" diameter plastic tape and reel
10
12
8
6
4
2
0
25 50 75
100 125 150 175
Average Forward Rectified Current (A)
Lead Temperature (°C)
Resistive or Inductive Load
T
L
measured
at the Cathode Band Terminal
0
1.5
3.0
4.5
6.0
7.5
9.0
0 1 2 3 4 5 6 7 8 9 10 11
Average Forward Current (A)
Average Power Loss (W)
D = 0.1
D = 0.2
D = 0.3
D = 0.5
D = 0.8
D = 1.0
D = t
p
/T t
p
T
SS10PH9, SS10PH10
www.vishay.com
Vishay General Semiconductor
Revision: 23-Dec-14
3
Document Number: 89000
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 4 - Typical Reverse Characteristics
Fig. 5 - Typical Junction Capacitance
Fig. 6 - Typical Transient Thermal Impedance
0.01
0.1
1
10
100
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Instantaneous Forward Voltage (V)
Instantaneous Forward Current (A)
T
A
= 175 °C
T
A
= 150 °C
T
A
= 125 °C
T
A
= 25 °C
0.00001
0.0001
0.001
0.01
0.1
1
10
10 20 30 40 50 60 70 80 90 100
T
A
= 175 °C
T
A
= 150 °C
T
A
= 125 °C
T
A
= 25 °C
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Reverse Current (mA)
10
100
1000
0.1 1 10 100
Reverse Voltage (V)
Junction Capacitance (pF)
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mV
p-p
Junction to Ambient
0.01 0.1 1 10 100
1
10
100
t - Pulse Duration (s)
Transient Thermal Impedance (°C/W)
P1-P3P4-P5

SS10PH10-M3/86A

Mfr. #:
Buy SS10PH10-M3/86A
Manufacturer:
Vishay Semiconductors
Description:
Schottky Diodes & Rectifiers 10 Amp 100 Volt 200 Amp IFSM
Lifecycle:
New from this manufacturer.
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